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Institution

Infineon Technologies

CompanyMunich, Germany
About: Infineon Technologies is a company organization based out in Munich, Germany. It is known for research contribution in the topics: Signal & Layer (electronics). The organization has 17104 authors who have published 33922 publications receiving 230082 citations. The organization is also known as: Infineon Technologies AG & ADMtek.


Papers
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Journal ArticleDOI
TL;DR: Several device technologies for realizing normally off operation that is highly desirable for power switching applications are presented and the examples of circuit applications that can greatly benefit from the superior performance of GaN power devices are demonstrated.
Abstract: In this paper, we present a comprehensive reviewand discussion of the state-of-the-art device technology and application development of GaN-on-Si power electronics. Several device technologies for realizing normally off operation that is highly desirable for power switching applications are presented. In addition, the examples of circuit applications that can greatly benefit from the superior performance of GaN power devices are demonstrated. Comparisonwith other competingpower device technology, such as Si superjunction-MOSFET and SiC MOSFET, is also presented and analyzed. Critical issues for commercialization of GaN-on-Si power devices are discussed with regard to cost, reliability, and ease of use.

922 citations

Journal ArticleDOI
TL;DR: The inner OFDM receiver and its functions necessary to demodulate the received signal and deliver soft information to the outer receiver for decoding are focused on.
Abstract: Orthogonal frequency-division multiplexing (OFDM) is the technique of choice in digital broad-band applications that must cope with highly dispersive transmission media at low receiver implementation cost. In this paper, we focus on the inner OFDM receiver and its functions necessary to demodulate the received signal and deliver soft information to the outer receiver for decoding. The effects of relevant nonideal transmission conditions are thoroughly analyzed: imperfect channel estimation, symbol frame offset, carrier and sampling clock frequency offset, time-selective fading, and critical analog components. Through an appropriate optimization criterion (signal-to-noise ratio loss), minimum requirements on each receiver synchronization function are systematically derived. An equivalent signal model encompassing the effects of all relevant imperfections is then formulated in a generalized framework. The paper concludes with an outline of synchronization strategies.

891 citations

Journal ArticleDOI
21 Oct 2004-Nature
TL;DR: This work demonstrates a manufacturing process for TFTs with a 2.5-nm-thick molecular self-assembled monolayer (SAM) gate dielectric and a high-mobility organic semiconductor (pentacene), which operate with supply voltages of less than 2 V yet have gate currents that are lower than those of advanced silicon field-effect transistors with SiO2 dielectrics.
Abstract: Organic thin film transistors (TFTs) are of interest for a variety of large-area electronic applications, such as displays, sensors and electronic barcodes. One of the key problems with existing organic TFTs is their large operating voltage, which often exceeds 20 V. This is due to poor capacitive coupling through relatively thick gate dielectric layers: these dielectrics are usually either inorganic oxides or nitrides, or insulating polymers, and are often thicker than 100 nm to minimize gate leakage currents. Here we demonstrate a manufacturing process for TFTs with a 2.5-nm-thick molecular self-assembled monolayer (SAM) gate dielectric and a high-mobility organic semiconductor (pentacene). These TFTs operate with supply voltages of less than 2 V, yet have gate currents that are lower than those of advanced silicon field-effect transistors with SiO2 dielectrics. These results should therefore increase the prospects of using organic TFTs in low-power applications (such as portable devices). Moreover, molecular SAMs may even be of interest for advanced silicon transistors where the continued reduction in dielectric thickness leads to ever greater gate leakage and power dissipation.

801 citations

Journal ArticleDOI
TL;DR: This collection of GaN technology developments is not itself a road map but a valuable collection of global state-of-the-art GaN research that will inform the next phase of the technology as market driven requirements evolve.
Abstract: Gallium nitride (GaN) is a compound semiconductor that has tremendous potential to facilitate economic growth in a semiconductor industry that is silicon-based and currently faced with diminishing returns of performance versus cost of investment. At a material level, its high electric field strength and electron mobility have already shown tremendous potential for high frequency communications and photonic applications. Advances in growth on commercially viable large area substrates are now at the point where power conversion applications of GaN are at the cusp of commercialisation. The future for building on the work described here in ways driven by specific challenges emerging from entirely new markets and applications is very exciting. This collection of GaN technology developments is therefore not itself a road map but a valuable collection of global state-of-the-art GaN research that will inform the next phase of the technology as market driven requirements evolve. First generation production devices are igniting large new markets and applications that can only be achieved using the advantages of higher speed, low specific resistivity and low saturation switching transistors. Major investments are being made by industrial companies in a wide variety of markets exploring the use of the technology in new circuit topologies, packaging solutions and system architectures that are required to achieve and optimise the system advantages offered by GaN transistors. It is this momentum that will drive priorities for the next stages of device research gathered here.

788 citations

Journal ArticleDOI
TL;DR: An overview of the research effort on volume holographic digital data storage is presented, highlighting new insights gained in the design and operation of working storage platforms, novel optical components and techniques, data coding and signal processing algorithms, systems tradeoffs, materials testing and tradeoff, and photon-gated storage materials.
Abstract: We present an overview of our research effort on volume holographic digital data storage. Innovations, developments, and new insights gained in the design and operation of working storage platforms, novel optical components and techniques, data coding and signal processing algorithms, systems tradeoffs, materials testing and tradeoffs, and photon-gated storage materials are summarized.

773 citations


Authors

Showing all 17127 results

NameH-indexPapersCitations
Rainer Waser9992748315
Johann W. Kolar9796536902
Martin Stutzmann8478130938
Georg S. Duesberg8032835128
Paolo Mattavelli7448219926
Thomas F. Schulz7235017537
Thomas Mikolajick6353315814
Peter Müller-Buschbaum6360517603
Praveen Jain5962711528
Fredrik Gustafsson5956219273
Axel Haase5735618594
Stefan Mangard5617914723
Hagen Klauk5523014482
Jack A. Mandelman5347710523
Henning Riechert532769054
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
202313
202215
2021439
2020756
2019899
2018925