International Rectifier

About: International Rectifier is a company organization based out in Wrexham, Wales [Cymru GB-CYM], United Kingdom. It is known for research contribution in the topics: Power semiconductor device & Transistor. The organization has 767 authors who have published 1624 publications receiving 27118 citations.

H-bridge drive utilizing a pair of high and low side MOSFET's in a common insulation housing

Abstract: A fully protected H-bridge for a d-c motor consists of two high side MOSFETs and a control and logic IC on a first conductive heat sink all within a first package and two discrete low side MOSFETs. The entire bridge is controlled by the IC. Shoot thru protection is provided for each leg, and a PMW soft start sequence is provided through the control of the low side MOSFETs, programed by an external, chargeable RC circuit. Input signals to the high side MOSFETs select the operation modes. Protective circuits are provided for short circuit current and over current conditions. Sleep mode and braking/non braking control is also provided.

A DC–DC Converter With High Voltage Gain and Two Input Boost Stages

Abstract: A family of nonisolated high-voltage-gain dc–dc power electronic converters is proposed. The suggested topologies can be used as multiport converters and draw continuous current from two input sources. They can also draw continuous current from a single source in an interleaved manner. This versatility makes them appealing in renewable applications such as solar farms. The proposed converters can easily achieve a gain of 20 while benefiting from a continuous input current. Such a converter can individually link a PV panel to a 400-V dc bus. The design and component selection procedures are presented. A 400-W prototype of the proposed converter with $V_{\text{in}} = 20$ and $V_{\text{out}} = 400$ V has been developed to validate the analytical results.

High power MOSFET with low on-resistance and high breakdown voltage

Abstract: A high power MOSFET is disclosed in which two laterally spaced sources each supply current through respective channels in one surface of a semiconductor chip which are controlled by the same gate. The channels lead from the source electrodes to a relatively low resistivity region and from there to a relatively high resistivity epitaxially formed region which is deposited on a high conductivity substrate. The drain electrode may be either on the opposite surface of the chip or laterally displaced from and on the same side as the source regions. The epitaxially deposited semiconductor material immediately adjacent and beneath the gate and in the path from the sources to the drain has a relatively high conductivity, thereby to substantially reduce the on-resistance of the device without effecting the breakdown voltage of the device. The breakdown voltage of the device is substantially increased by forming a relatively deep p-type diffusion with a large radius in the n-type epitaxial layer beneath each of the sources.

Bridgeless PFC implementation using one cycle control technique

Abstract: Conventional boost PFC suffers from the high conduction loss in the input rectifier-bridge. Higher efficiency can be achieved by using the bridgeless boost topology. This new circuit has issues such as voltage sensing, current sensing and EMI noise. In this paper, one cycle control technique is used to solve the issues of the voltage sensing and current sensing. Experimental results show efficiency improvement and EMI performance

A resonant MOSFET gate driver with efficient energy recovery

Abstract: High frequency pulse-width modulation (PWM) converters generally suffer from excessive gate drive loss. This paper presents a resonant gate drive circuit that features efficient energy recovery at both charging and discharging transitions. Following a brief introduction of metal oxide semiconductor field effect transistor (MOSFET) gate drive loss, this paper discusses the gate drive requirements for high frequency PWM applications and common shortcomings of existing resonant gate drive techniques. To overcome the apparent disparity, a new resonant MOSFET gate drive circuit is then presented. The new circuit produces low gate drive loss, fast switching speed, clamped gate voltages, immunity to false trigger and has no limitation on the duty cycle. Experimental results further verify its functionality.