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Institution

Intersil

CompanyMilpitas, California, United States
About: Intersil is a company organization based out in Milpitas, California, United States. It is known for research contribution in the topics: Voltage regulator & Layer (electronics). The organization has 347 authors who have published 336 publications receiving 7165 citations. The organization is also known as: Intersil Corporation.


Papers
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Journal ArticleDOI
TL;DR: Several of the extraction methods currently used to determine the value of threshold voltage from the measured drain current versus gate voltage transfer characteristics, focusing specially on single-crystal bulk MOSFETs are reviewed.

813 citations

Journal ArticleDOI
TL;DR: In this paper, a synchronous rectifier (SR) driving scheme was proposed for dc-dc resonant converters with SRs, which can achieve low stress, high efficiency, and high power density.
Abstract: This paper proposes a novel synchronous rectifier (SR) driving scheme for resonant converters. It is very suitable for high-frequency, high-efficiency, and high-power-density dc-dc resonant converters with SRs. In this paper, an LLC resonant converter with the proposed synchronous rectification is designed and analyzed. With the proposed driving scheme, the SR body diode conduction is reduced to almost zero. The driving scheme eliminates the reverse-recovery problem of SRs. Both current and voltage stresses are greatly decreased, and the conduction loss and switching loss of SRs are also reduced considerably. The experimental results show that the proposed LLC resonant converter with SRs can achieve low stress, high efficiency, and high power density.

304 citations

Patent
09 Mar 1998
TL;DR: In this article, a method for making a semiconductor device from a plurality of semiconductor substrates includes the steps of: processing at least one surface of at least 1 of the substrates, thinning at least the substrate, bonding the processed and thinned substrates together, and annealing the bonded together substrates at a relatively low anneal temperature.
Abstract: A method for making a semiconductor device from a plurality of semiconductor substrates includes the steps of: processing at least one surface of at least one of the substrates; thinning at least one of the substrates; bonding the processed and thinned substrates together so that the at least one processed surface defines an outer surface of the semiconductor device; and annealing the bonded together substrates at a relatively low anneal temperature so as to not adversely effect the at least one processed surface. The step of thinning preferably comprises removing a surface portion of the least one substrate opposite the processed surface, to a thickness of less than about 200 μm. A gettering layer may be formed for the at least one substrate prior to thinning. Accordingly, the step of thinning removes the gettering layer. An implanted region may be formed at a surface of the at least one substrate opposite the processed surface prior to bonding. The implanting may comprise implanting with a lifetime killing implant or a dopant. An epitaxial layer may be formed on the backside of a substrate. The step of processing may include forming a metal layer. Thus, the anneal temperature is preferably less than a temperature related to a characteristic of the metal layer. For an aluminum layer, the anneal temperature is preferably less than about 450° C. If a barrier metal is used between the aluminum and substrate, the anneal temperature may be in a range of about 450 to 550° C.

181 citations

Patent
02 May 2001
TL;DR: In this paper, a DC-to-DC converter has a pulse width modulator PWM and a hysteretic (ripple) modulator, and switching from one mode to another can be delayed by the counters to prevent changing modes based on spurious output voltage fluctuations.
Abstract: A DC-to-DC converter has a pulse width modulator PWM) and a hysteretic (ripple) modulator. For low current loads, the hysteretic modulator is selected; for high current loads, the PWM is selected. A mode selection switch senses the polarity of the switched output voltage at the end of each switching cycle. If the polarity changes from one cycle to the next, the mode may be instantly changed to the other mode. Counters are used to record the polarity at the end of each cycle and switching from one mode to another can be delayed by the counters to prevent changing modes based on spurious output voltage fluctuations.

156 citations

Journal ArticleDOI
TL;DR: The system provides a feature representation of multiple frequency resolutions for faulty modes and accurately differentiates between healthy and faulty conditions, and its main applicability is to dynamic time-variant signals experienced in induction motors during run time.
Abstract: We present an algorithm for the online detection of rotor bar breakage in induction motors through the use of wavelet packet decomposition (WPD) and neural networks. The system provides a feature representation of multiple frequency resolutions for faulty modes and accurately differentiates between healthy and faulty conditions, and its main applicability is to dynamic time-variant signals experienced in induction motors during run time. The algorithm analyzes rotor bar faults by WPD of the induction motor stator current. The extracted features with different frequency resolutions, together with the slip speed, are then used by a neural network trained for the detection of faults. The experimental results show that the proposed method is able to detect the faulty conditions with high accuracy.

152 citations


Authors

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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20191
20184
20174
20164
20152
201410