Jaypee Institute of Information Technology

About: Jaypee Institute of Information Technology is a education organization based out in Noida, Uttar Pradesh, India. It is known for research contribution in the topics: Cluster analysis & Wireless sensor network. The organization has 2136 authors who have published 3435 publications receiving 31458 citations. The organization is also known as: JIIT Noida.

Low-K Dielectric Pocket and Workfunction Engineering for DC and Analog/RF Performance Improvement in Dual Material Stack Gate Oxide Double Gate TFET

Abstract: In this paper, we investigate the effect of low K dielectric pocket on DC and analog/RF performance in dual material stack gate oxide double gate tunnel field effect transistor. For this, we have considered an optimized dielectric pocket at the interface of the source-channel tunneling junction to reduce the barrier width. A stack gate oxide (SiO2 + HfO2) with workfunction engineering is applied to improve the capacitive coupling, decrease the ambipolar, leakage currents and increase the ON-current (ION). In addition, the entire gate has been divided into three segments, named as tunnelling gate (M1) with workfunction (ϕ1), Control gate (M2) with workfunction (ϕ2) and auxiliary gate (M3) with workfunction (ϕ3). All the possible combinations of these workfunctions were considered to maintain dual work functionality. Further, technology computer-aided design (TCAD) simulations for these possible combinations were carried out and compared with single material stack gate oxide dual gate source dielectric pocket TFET (ϕ1 = ϕ2 = ϕ3). Simulation results shows that the workfunction combination (ϕ1 = ϕ3 < ϕ2) outperforms the other three structures. Further, the performance of this device is compared with dual material control gate source dielectric pocket TFET (DMCG-SDP-TFET) with SiO2 gate oxide. The dielectric pocket at the tunneling junction and workfunction engineering on the stack gate oxide shows significant enhancement in ON state current (1.47× 10− 4A/μm), ION/IOFF (3.14× 1012), point subthreshold slope (15.7mV/decade), transconductance (1.02× 10− 3S), cut-off frequency (1.93× 1011Hz) and significant changes in other analog/RF performance parameters, making this device suitable for high frequency and low power applications.

Two-Qubit Quantum Gates to Reduce the Quantum Cost of Reversible Circuit

Abstract: This paper presents a quantum gate library that consists of all possible two-qubit quantum gates which do not produce entangled states. The quantum cost of each two-qubit gate in the proposed library is one. Therefore, these gates can be used to reduce the quantum costs of reversible circuits. Experimental results show a significant reduction of quantum cost in benchmark circuits. The resulting circuits could be further optimized with existing tools, such as quantum template matching.

Structural and optical properties of Cd and Mg doped zinc oxide thin films deposited by pulsed laser deposition

Abstract: The 7 wt % Cd doped and 15 wt % Mg doped ZnO thin films were deposited on quartz substrate by pulse laser deposition system. The structural and optical properties of the prepared ZnO, Cd:ZnO and Mg:ZnO films were investigated by X-Ray diffraction (XRD), photoluminescence and UV-Vis spectroscopy techniques. XRD results indicate that the doped ZnO films maintain wurtzite crystal symmetry without any defects and are oriented along c- axis. Photoluminescence studies show a sharp band edge emission peak at 384 nm for pure ZnO film. This peak is blue shifted to 381 nm with Cd doping and red shifted to 395 nm with Mg doping. UV visible absorption studies reveals a decrease in band gap with Cd doping and an increase in band gap with Mg doping.

Novel CMOS Current Inverting Differential Input Transconductance Amplifier and Its Application

Abstract: This paper presents the complementary metal oxide semiconductor (CMOS) implementation of active building block, namely, current inverting differential input transconductance amplifier (CIDITA) along with its performance parameters. The detailed study of the proposed CMOS CIDITA has been incorporated. The presented study shows the good performance of CIDITA in terms of good bandwidth range, good linear range of input current, high accuracy and low operating voltage. A new circuit of single active element-based quadrature oscillator is further realized to explore the workability of CIDITA. The proposed circuit of quadrature oscillator employs two grounded capacitors, one resistor and single CIDITA. The proposed quadrature oscillator provides both quadrature current outputs and quadrature voltage outputs simultaneously. The frequency of oscillation of the proposed quadrature oscillator is electronically controllable. The possible practical realization of the CIDITA using commercially available ICs is also gi...