scispace - formally typeset
Search or ask a question
Institution

Johannes Kepler University of Linz

EducationLinz, Oberösterreich, Austria
About: Johannes Kepler University of Linz is a education organization based out in Linz, Oberösterreich, Austria. It is known for research contribution in the topics: Computer science & Thin film. The organization has 6605 authors who have published 19243 publications receiving 385667 citations.


Papers
More filters
Proceedings ArticleDOI
04 May 2014
TL;DR: It is shown that CNNs outperform the previous state-of-the-art while requiring less manual preprocessing, suggesting that even for well-understood signal processing tasks, machine learning can be superior to knowledge engineering.
Abstract: Musical onset detection is one of the most elementary tasks in music analysis, but still only solved imperfectly for polyphonic music signals. Interpreted as a computer vision problem in spectrograms, Convolutional Neural Networks (CNNs) seem to be an ideal fit. On a dataset of about 100 minutes of music with 26k annotated onsets, we show that CNNs outperform the previous state-of-the-art while requiring less manual preprocessing. Investigating their inner workings, we find two key advantages over hand-designed methods: Using separate detectors for percussive and harmonic onsets, and combining results from many minor variations of the same scheme. The results suggest that even for well-understood signal processing tasks, machine learning can be superior to knowledge engineering.

195 citations

Journal ArticleDOI
TL;DR: In this paper, a novel ELISA system was developed to unequivocally demonstrate that IgE-mediated Type I allergy is the main mechanism leading to immediate-type adverse reactions to the analgesic drug PP.
Abstract: Background: Propyphenazone (1,2–dihydro-1,5-dimethyl-4-(1-methylethyl)-2-phenyl-3H-pyrazol-3-one; PP) is a nonsteroidal anti-inflammatory drug frequently used as mild analgesic medicament. It belongs to the chemical group of pyrazolones. Severe adverse reactions to PP are frequent and have generally been regarded as pseudoallergic or intolerance reactions. Presently, there are no useful in vitro test systems available for the detection of antibodies directed against analgesic drugs. Objective: The purpose of this study was to unequivocally demonstrate that IgE-mediated Type I allergy is the main mechanism leading to immediate-type adverse reactions to the analgesic drug PP. Methods: We investigated 53 young adult patients with adverse reactions to PP. All patients developed symptoms suggestive of IgE-mediated anaphylaxis within 30 minutes after intake of a painkiller containing PP. Patients were subjected to skin tests (prick test and intracutaneous test). In addition, a novel ELISA system was developed to prove the existence of specific IgE antibodies in patients' sera. Results: In 44 of 53 (83%) patients, skin tests showed typical wheal and flare reactions. Significant amounts of PP-specific serum IgE was detected in 31 of 53 (58%) of the serum samples. Moreover, in 7 of 9 patients with skin test negative results, PP-specific IgE could be detected. The assay was PP-specific because only PP, but no other pyrazolone derivative (antipyrine, aminophenazone, or metamizol), was able to inhibit IgE-binding in the system. Conclusion: Propyphenazone is a sensitizing agent in susceptible individuals and can elicit IgE-mediated anaphylaxis. By using skin tests and our ELISA system we were able to confirm Type I allergy in 51 of 53 (96%) patients in this study.

195 citations

Journal ArticleDOI
TL;DR: In this article, a 3D dye-sensitized photovoltaic solar cells were fabricated using a three-layer concept, which consist of a transparent inorganic nanocrystalline titanium dioxide (nc-TiO 2 ) layer with a thickness of 2μm as electron acceptor and for electron transport.

194 citations

Journal ArticleDOI
TL;DR: The performance of organic thin-film transistors (OTFTs) for flexible, low cost and disposable “plastic” electronic products advances rapidly: various organic semiconductors display hole or electron carrier mobilities that compare favorably with those of hydrogenated amorphous silicon, the inorganic counterpart for flexible displays, smart cards and radio frequency identification tags, nonvolatile memories and sensors as mentioned in this paper.
Abstract: The performance of organic thin-film transistors (OTFT) for flexible, low cost and disposable “plastic” electronic products advances rapidly: various organic semiconductors display hole or electron carrier mobilities that compare favorably with those of hydrogenated amorphous silicon, the inorganic counterpart for such applications as flexible displays, smart cards and radio frequency identification tags, nonvolatile memories and sensors The possibility for tailoring functional organic materials, bears potential towards novel electronic products such as smart skins, smart textiles and “invisible electronics”, where multiple functionalities, portability and ubiquitous integration is requested In this context diverse properties of organic thin-film devices are inevitable such as lightweight, low power consumption, low operationvoltage and compatibility with diverse substrates Reducing the threshold voltage and the subthreshold swing is essential for operating OTFTs at low-voltage levels When combined with very low gate leakage currents, OTFTs may also become a key element in high-end sensor applications, such as flexible touch pads and screens or thermal imaging tools for night vision, surveillance or for the detection of undesired heat loss paths in buildings The aforementioned transistor parameters not only critically depend on the thickness and the dielectric properties of the gate insulator, but also on the trapped charge densities at the interface between these materials The selection of semiconductors and gate insulators with excellent interface properties is currently the challenge in the quest for improving the performance of OTFTs Here we show that bottom-gate OTFTs based on the organic semiconductor pentacene and high-k nanocomposite gate dielectrics, exhibit transistor performances with very low gate leakage currents, subthreshold swings close to the theoretical limit, and low-voltage battery operation The subthreshold swings of OTFTs with different organic and hybrid gate dielectrics follow an inverse dependence on the gate capacitance as is expected by standard MOS theory The trapped charge carrier density at the interface between the semiconductor and the dielectric surpasses that of the SiO2-pentacene interface, being close to the average trap densities in the SiO2–Si interface in metal oxide semiconductor transistors [15] We also report the first application of these OTFTs in an optothermal light sensor We describe the transistor, the temperature sensitive fluorinated polymer, their combination in an integrated circuit, and the application of this circuit as a thermal infrared sensor and as a switch that can be operated by a laser pointer Figure 1 shows the structure of low-voltage organic transistors with high dielectric constant (high-k) oxide–polymer nanocomposites Al2O3 or ZrO2 were chosen as high-k dielectric materials, combined with poly(a-methyl styrene) (PaMS) or poly(vinyl cinnamate) (PVCi) to form a smooth and dense nanocomposite gate dielectric Pentacene is used as the organic semiconductor material, the gate electrode is based on Al, while Au source and drain electrodes are employed Figure 1b, c, and d show atomic force microscopy (AFM) images of a ZrO2/PaMS nanocomposite gate dielectric based transistor The bare ZrO2 metal oxide surface is displayed in Figure 1b, the nanocomposite in (c) and the pentacene layer grown on top of the nanocomposite dielectric in (d) The AFM images clearly reveal that the rough (surface rms-roughness = 15 nm) and less dense ZrO2 layer, which is composed of regularly clubbed grains (Fig 1a), smoothens by forming the nanocomposite (rms-roughness = 04 nm) The substrate roughness critically influences the growth dynamics of pentacene molecules on top of dielectric surfaces, grain sizes typically increase with decreasing surface roughness For rmsroughness values below 05 nm the pentacene morphology is characterized by dentritic crystallites of several microns C O M M U N IC A IO N

194 citations

Book ChapterDOI
05 Apr 1982
TL;DR: An algorithm for constructing a basis of the ideal of all polynomials, which vanish at a preassigned set of points, is presented, which yields also Newton-type poynomials for pointwise interpolation.
Abstract: We present an algorithm for constructing a basis of the ideal of all polynomials, which vanish at a preassigned set of points {y1,...,ym} ⊂ Kn, K a field. The algorithm yields also Newton-type polynomials for pointwise interpolation. These polynomials admit an immediate construction of interpolating polynomials and allow to shorten the algorithm, if it is applied to an enlarged set {y1,...,ym1} ⊂ Kn, m1>m.

194 citations


Authors

Showing all 6718 results

NameH-indexPapersCitations
Wolfgang Wagner1562342123391
A. Paul Alivisatos146470101741
Klaus-Robert Müller12976479391
Christoph J. Brabec12089668188
Andreas Heinz108107845002
Niyazi Serdar Sariciftci9959154055
Lars Samuelson9685036931
Peter J. Oefner9034830729
Dmitri V. Talapin9030339572
Tomás Torres8862528223
Ramesh Raskar8667030675
Siegfried Bauer8442226759
Alexander Eychmüller8244423688
Friedrich Schneider8255427383
Maksym V. Kovalenko8136034805
Network Information
Related Institutions (5)
Karlsruhe Institute of Technology
82.1K papers, 2.1M citations

92% related

École Polytechnique Fédérale de Lausanne
98.2K papers, 4.3M citations

91% related

RWTH Aachen University
96.2K papers, 2.5M citations

91% related

Georgia Institute of Technology
119K papers, 4.6M citations

91% related

Nanyang Technological University
112.8K papers, 3.2M citations

91% related

Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20242
202354
2022187
20211,404
20201,412
20191,365