Kanagawa University

About: Kanagawa University is a education organization based out in Yokohama, Japan. It is known for research contribution in the topics: Catalysis & KEKB. The organization has 3847 authors who have published 6862 publications receiving 138729 citations. The organization is also known as: Kanagawa Daigaku.

Electrochemical Photolysis of Water at a Semiconductor Electrode

Abstract: ALTHOUGH the possibility of water photolysis has been investigated by many workers, a useful method has only now been developed. Because water is transparent to visible light it cannot be decomposed directly, but only by radiation with wavelengths shorter than 190 nm (ref. 1).

Observation of a Narrow Charmoniumlike State in Exclusive B±→K±π+π-J/ψ Decays

Abstract: We report the observation of a narrow charmoniumlike state produced in the exclusive decay process B+/--->K+/-pi(+)pi(-)J/psi. This state, which decays into pi(+)pi(-)J/psi, has a mass of 3872.0+/-0.6(stat)+/-0.5(syst) MeV, a value that is very near the M(D0)+M(D(*0)) mass threshold. The results are based on an analysis of 152M B-Bmacr; events collected at the Upsilon(4S) resonance in the Belle detector at the KEKB collider. The signal has a statistical significance that is in excess of 10sigma.

Measurement of the branching ratio of B ¯ →d (∗)τ- ν ¯ τ relative to B ¯ →d (∗) - ν ¯ decays with hadronic tagging at Belle

Abstract: We report a measurement of the branching fraction ratios R(D)(()*()) of (B) over bar -> D-(*())tau(-)(nu) over bar (tau) relative to (B) over bar -> D-(*())l(-)(nu) over barl (where l = e or mu) using the full Belle data sample of 772 x 10(6)B (B) over bar pairs collected at the Upsilon(4S) resonance with the Belle detector at the KEKB asymmetric-energy e(+)e(-) collider. The measured values are R(D) = 0.375 +/- 0.064(stat) +/- 0.026(syst) and R(D*) = 0.293 +/- 0.038 (stat) +/- 0.015 (syst). The analysis uses hadronic reconstruction of the tag-side B meson and purely leptonic t decays. The results are consistent with earlier measurements and do not show a significant deviation from the standard model prediction.

Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors.

Abstract: Group-III-nitride semiconductors have shown enormous potential as light sources for full-colour displays, optical storage and solid-state lighting. Remarkably, InGaN blue- and green-light-emitting diodes (LEDs) emit brilliant light although the threading dislocation density generated due to lattice mismatch is six orders of magnitude higher than that in conventional LEDs. Here we explain why In-containing (Al,In,Ga)N bulk films exhibit a defect-insensitive emission probability. From the extremely short positron diffusion lengths (<4 nm) and short radiative lifetimes of excitonic emissions, we conclude that localizing valence states associated with atomic condensates of In-N preferentially capture holes, which have a positive charge similar to positrons. The holes form localized excitons to emit the light, although some of the excitons recombine at non-radiative centres. The enterprising use of atomically inhomogeneous crystals is proposed for future innovation in light emitters even when using defective crystals.