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Institution

King Abdullah University of Science and Technology

EducationJeddah, Saudi Arabia
About: King Abdullah University of Science and Technology is a education organization based out in Jeddah, Saudi Arabia. It is known for research contribution in the topics: Membrane & Catalysis. The organization has 6221 authors who have published 22019 publications receiving 625706 citations. The organization is also known as: KAUST.
Topics: Membrane, Catalysis, Fading, Population, Combustion


Papers
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Journal ArticleDOI
TL;DR: Selenide-based electrocatalysts and scaffolds on carbon cloth are successfully fabricated and demonstrated for enhanced water oxidation applications, suggesting the potential of these materials to serve as advanced oxygen evolution reaction catalysts.
Abstract: Selenide-based electrocatalysts and scaffolds on carbon cloth are successfully fabricated and demonstrated for enhanced water oxidation applications. A max-imum current density of 97.5 mA cm(-2) at an overpotential of a mere 300 mV and a small Tafel slope of 77 mV dec(-1) are achieved, suggesting the potential of these materials to serve as advanced oxygen evolution reaction catalysts.

516 citations

Journal ArticleDOI
TL;DR: The data show the feasibility of engineering TALE-based hybrid nucleases capable of generating site-specific DSBs and the great potential for site- specific genome modification in plants and eukaryotes in general.
Abstract: Site-specific and rare cutting nucleases are valuable tools for genome engineering. The generation of double-strand DNA breaks (DSBs) promotes homologous recombination in eukaryotes and can facilitate gene targeting, additions, deletions, and inactivation. Zinc finger nucleases have been used to generate DSBs and subsequently, for genome editing but with low efficiency and reproducibility. The transcription activator-like family of type III effectors (TALEs) contains a central domain of tandem repeats that could be engineered to bind specific DNA targets. Here, we report the generation of a Hax3-based hybrid TALE nuclease with a user-selected DNA binding specificity. We show that the engineered TALE nuclease can bind to its target sequence in vitro and that the homodimeric TALE nuclease can cleave double-stranded DNA in vitro if the DNA binding sites have the proper spacing and orientation. Transient expression assays in tobacco leaves suggest that the hybrid nuclease creates DSB in its target sequence, which is subsequently repaired by nonhomologous end-joining repair. Taken together, our data show the feasibility of engineering TALE-based hybrid nucleases capable of generating site-specific DSBs and the great potential for site-specific genome modification in plants and eukaryotes in general.

515 citations

Journal ArticleDOI
TL;DR: In this paper, the authors highlight the advantages of this approach with discussions focused on potential applications in the transportation sector together with analysis of technical requirements, limitations, and costs for selective hydrogen generation from formic acid.
Abstract: The high volumetric capacity (53 g H2/L) and its low toxicity and flammability under ambient conditions make formic acid a promising hydrogen energy carrier. Particularly, in the past decade, significant advancements have been achieved in catalyst development for selective hydrogen generation from formic acid. This Perspective highlights the advantages of this approach with discussions focused on potential applications in the transportation sector together with analysis of technical requirements, limitations, and costs.

508 citations

Journal ArticleDOI
TL;DR: P-type oxides still lag in performance behind their n-type counterparts, which have entered volume production in the display market, and recent successes along with the hurdles that stand in the way of commercial success of p-type oxide semiconductors are presented.
Abstract: The development of transparent p-type oxide semiconductors with good performance may be a true enabler for a variety of applications where transparency, power efficiency, and greater circuit complexity are needed. Such applications include transparent electronics, displays, sensors, photovoltaics, memristors, and electrochromics. Hence, here, recent developments in materials and devices based on p-type oxide semiconductors are reviewed, including ternary Cu-bearing oxides, binary copper oxides, tin monoxide, spinel oxides, and nickel oxides. The crystal and electronic structures of these materials are discussed, along with approaches to enhance valence-band dispersion to reduce effective mass and increase mobility. Strategies to reduce interfacial defects, off-state current, and material instability are suggested. Furthermore, it is shown that promising progress has been made in the performance of various types of devices based on p-type oxides. Several innovative approaches exist to fabricate transparent complementary metal oxide semiconductor (CMOS) devices, including novel device fabrication schemes and utilization of surface chemistry effects, resulting in good inverter gains. However, despite recent developments, p-type oxides still lag in performance behind their n-type counterparts, which have entered volume production in the display market. Recent successes along with the hurdles that stand in the way of commercial success of p-type oxide semiconductors are presented.

507 citations

Journal ArticleDOI
TL;DR: The phototransistors based on hybrid perovskite films are investigated and provide direct evidence for their superior carrier transport property with ambipolar characteristics and exhibit an ultrafast photoresponse speed of less than 10 μs.
Abstract: Organolead halide perovskites have attracted substantial attention because of their excellent physical properties, which enable them to serve as the active material in emerging hybrid solid-state solar cells. Here we investigate the phototransistors based on hybrid perovskite films and provide direct evidence for their superior carrier transport property with ambipolar characteristics. The field-effect mobilities for triiodide perovskites at room temperature are measured as 0.18 (0.17) cm(2) V(-1) s(-1) for holes (electrons), which increase to 1.24 (1.01) cm(2) V(-1) s(-1) for mixed-halide perovskites. The photoresponsivity of our hybrid perovskite devices reaches 320 A W(-1), which is among the largest values reported for phototransistors. Importantly, the phototransistors exhibit an ultrafast photoresponse speed of less than 10 μs. The solution-based process and excellent device performance strongly underscore hybrid perovskites as promising material candidates for photoelectronic applications.

504 citations


Authors

Showing all 6430 results

NameH-indexPapersCitations
Jian-Kang Zhu161550105551
Jean M. J. Fréchet15472690295
Kevin Murphy146728120475
Jean-Luc Brédas134102685803
Carlos M. Duarte132117386672
Kazunari Domen13090877964
Jian Zhou128300791402
Tai-Shung Chung11987954067
Donal D. C. Bradley11565265837
Lain-Jong Li11362758035
Hong Wang110163351811
Peng Wang108167254529
Juan Bisquert10745046267
Jian Zhang107306469715
Karl Leo10483242575
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
2023141
2022371
20212,836
20202,809
20192,544
20182,251