Institution
King Abdullah University of Science and Technology
Education•Jeddah, Saudi Arabia•
About: King Abdullah University of Science and Technology is a education organization based out in Jeddah, Saudi Arabia. It is known for research contribution in the topics: Membrane & Catalysis. The organization has 6221 authors who have published 22019 publications receiving 625706 citations. The organization is also known as: KAUST.
Topics: Membrane, Catalysis, Fading, Population, Combustion
Papers published on a yearly basis
Papers
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327 citations
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TL;DR: It is proposed that the glycol side chains facilitate hydration and ion penetration, without compromising electronic mobility, and suggested that this synthetic approach can be used to guide the design of organic mixed conductors.
Abstract: Electrolyte-gated organic transistors offer low bias operation facilitated by direct contact of the transistor channel with an electrolyte. Their operation mode is generally defined by the dimensionality of charge transport, where a field-effect transistor allows for electrostatic charge accumulation at the electrolyte/semiconductor interface, whereas an organic electrochemical transistor (OECT) facilitates penetration of ions into the bulk of the channel, considered a slow process, leading to volumetric doping and electronic transport. Conducting polymer OECTs allow for fast switching and high currents through incorporation of excess, hygroscopic ionic phases, but operate in depletion mode. Here, we show that the use of glycolated side chains on a thiophene backbone can result in accumulation mode OECTs with high currents, transconductance, and sharp subthreshold switching, while maintaining fast switching speeds. Compared with alkylated analogs of the same backbone, the triethylene glycol side chains shift the mode of operation of aqueous electrolyte-gated transistors from interfacial to bulk doping/transport and show complete and reversible electrochromism and high volumetric capacitance at low operating biases. We propose that the glycol side chains facilitate hydration and ion penetration, without compromising electronic mobility, and suggest that this synthetic approach can be used to guide the design of organic mixed conductors.
326 citations
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TL;DR: Low-dimensional-networked (low-DN) perovskite derivatives are bulk quantum materials in which charge carriers are localized within ordered metal halide sheets, rods, or clusters that are separated by cationic lattices.
Abstract: Low-dimensional-networked (low-DN) perovskite derivatives are bulk quantum materials in which charge carriers are localized within ordered metal halide sheets, rods, or clusters that are separated by cationic lattices. After two decades of hibernation, this class of semiconductors reemerged in the past two years, largely catalyzed by the interest in alternative, more stable absorbers to CH3NH3PbI3-type perovskites in photovoltaics. Whether low-DN perovskites will surpass other photovoltaic technologies remains to be seen, but their impressively high photo- and electroluminescence yields have already set new benchmarks in light emission applications. Here we offer our perspective on the most exciting advances in materials design of low-DN perovskites for energy- and optoelectronic-related applications. The next few years will usher in an explosive growth in this tribe of quantum materials, as only a few members have been synthesized, while the potential library of compositions and structures is believed to...
326 citations
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TL;DR: De Wolf et al. as mentioned in this paper reviewed the fundamental physical processes governing contact formation in crystalline silicon (c-Si) and identified the role passivating contacts play in increasing c-Si solar cell efficiencies beyond the limitations imposed by heavy doping and direct metallization.
Abstract: The global photovoltaic (PV) market is dominated by crystalline silicon (c-Si) based technologies with heavily doped, directly metallized contacts. Recombination of photo-generated electrons and holes at the contact regions is increasingly constraining the power conversion efficiencies of these devices as other performance-limiting energy losses are overcome. To move forward, c-Si PV technologies must implement alternative contacting approaches. Passivating contacts, which incorporate thin films within the contact structure that simultaneously supress recombination and promote charge-carrier selectivity, are a promising next step for the mainstream c-Si PV industry. In this work, we review the fundamental physical processes governing contact formation in c-Si. In doing so we identify the role passivating contacts play in increasing c-Si solar cell efficiencies beyond the limitations imposed by heavy doping and direct metallization. Strategies towards the implementation of passivating contacts in industrial environments are discussed. The development of passivating contacts holds great potential for enhancing the power conversion efficiency of silicon photovoltaics. Here, De Wolf et al. review recent advances in material design and device architecture, and discuss technical challenges to industrial fabrication.
326 citations
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Estonian Biocentre1, University of Tartu2, University of Cambridge3, Arizona State University4, University of California, Berkeley5, Armenian National Academy of Sciences6, Russian Academy of Sciences7, University of Auckland8, Pennsylvania State University9, University of Winchester10, Wellcome Trust Sanger Institute11, University of Copenhagen12, Kazan Federal University13, Bashkir State University14, University of Pennsylvania15, Georgia Institute of Technology16, Centre national de la recherche scientifique17, Eijkman Institute for Molecular Biology18, Massey University19, University of Dhaka20, Aarhus University21, Griffith University22, Josip Juraj Strossmayer University of Osijek23, Academy of Sciences of Uzbekistan24, Kuban State Medical University25, L.N.Gumilyov Eurasian National University26, Nazarbayev University27, North-Eastern Federal University28, Academy of Medical Sciences, United Kingdom29, Anthony Nolan30, University College London31, University of St Andrews32, University of Kharkiv33, International Burch University34, National Academy of Sciences of Belarus35, Radboud University Nijmegen36, King Abdullah University of Science and Technology37, Stanford University38, University of Arizona39, Stony Brook University40, University Hospital of North Norway41, Estonian Academy of Sciences42
TL;DR: A study of 456 geographically diverse high-coverage Y chromosome sequences, including 299 newly reported samples, infer a second strong bottleneck in Y-chromosome lineages dating to the last 10 ky, and hypothesize that this bottleneck is caused by cultural changes affecting variance of reproductive success among males.
Abstract: It is commonly thought that human genetic diversity in non-African populations was shaped primarily by an out-of-Africa dispersal 50-100 thousand yr ago (kya). Here, we present a study of 456 geographically diverse high-coverage Y chromosome sequences, including 299 newly reported samples. Applying ancient DNA calibration, we date the Y-chromosomal most recent common ancestor (MRCA) in Africa at 254 (95% CI 192-307) kya and detect a cluster of major non-African founder haplogroups in a narrow time interval at 47-52 kya, consistent with a rapid initial colonization model of Eurasia and Oceania after the out-of-Africa bottleneck. In contrast to demographic reconstructions based on mtDNA, we infer a second strong bottleneck in Y-chromosome lineages dating to the last 10 ky. We hypothesize that this bottleneck is caused by cultural changes affecting variance of reproductive success among males.
325 citations
Authors
Showing all 6430 results
Name | H-index | Papers | Citations |
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Jian-Kang Zhu | 161 | 550 | 105551 |
Jean M. J. Fréchet | 154 | 726 | 90295 |
Kevin Murphy | 146 | 728 | 120475 |
Jean-Luc Brédas | 134 | 1026 | 85803 |
Carlos M. Duarte | 132 | 1173 | 86672 |
Kazunari Domen | 130 | 908 | 77964 |
Jian Zhou | 128 | 3007 | 91402 |
Tai-Shung Chung | 119 | 879 | 54067 |
Donal D. C. Bradley | 115 | 652 | 65837 |
Lain-Jong Li | 113 | 627 | 58035 |
Hong Wang | 110 | 1633 | 51811 |
Peng Wang | 108 | 1672 | 54529 |
Juan Bisquert | 107 | 450 | 46267 |
Jian Zhang | 107 | 3064 | 69715 |
Karl Leo | 104 | 832 | 42575 |