LSI Corporation

About: LSI Corporation is a based out in . It is known for research contribution in the topics: Signal & Integrated circuit. The organization has 4526 authors who have published 7436 publications receiving 144413 citations. The organization is also known as: LSI Logic.

High-κ gate dielectrics: Current status and materials properties considerations

Abstract: Many materials systems are currently under consideration as potential replacements for SiO2 as the gate dielectric material for sub-0.1 μm complementary metal–oxide–semiconductor (CMOS) technology. A systematic consideration of the required properties of gate dielectrics indicates that the key guidelines for selecting an alternative gate dielectric are (a) permittivity, band gap, and band alignment to silicon, (b) thermodynamic stability, (c) film morphology, (d) interface quality, (e) compatibility with the current or expected materials to be used in processing for CMOS devices, (f) process compatibility, and (g) reliability. Many dielectrics appear favorable in some of these areas, but very few materials are promising with respect to all of these guidelines. A review of current work and literature in the area of alternate gate dielectrics is given. Based on reported results and fundamental considerations, the pseudobinary materials systems offer large flexibility and show the most promise toward success...

Global-Scale Similarities in Nitrogen Release Patterns During Long-Term Decomposition

Abstract: Litter decomposition provides the primary source of mineral nitrogen (N) for biological activity in most terrestrial ecosystems. A 10-year decomposition experiment in 21 sites from seven biomes found that net N release from leaf litter is dominantly driven by the initial tissue N concentration and mass remaining regardless of climate, edaphic conditions, or biota. Arid grasslands exposed to high ultraviolet radiation were an exception, where net N release was insensitive to initial N. Roots released N linearly with decomposition and exhibited little net N immobilization. We suggest that fundamental constraints on decomposer physiologies lead to predictable global-scale patterns in net N release during decomposition.

Ultrathin (<4 nm) SiO2 and Si-O-N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits

Abstract: The outstanding properties of SiO2, which include high resistivity, excellent dielectric strength, a large band gap, a high melting point, and a native, low defect density interface with Si, are in large part responsible for enabling the microelectronics revolution. The Si/SiO2 interface, which forms the heart of the modern metal–oxide–semiconductor field effect transistor, the building block of the integrated circuit, is arguably the worlds most economically and technologically important materials interface. This article summarizes recent progress and current scientific understanding of ultrathin (<4 nm) SiO2 and Si–O–N (silicon oxynitride) gate dielectrics on Si based devices. We will emphasize an understanding of the limits of these gate dielectrics, i.e., how their continuously shrinking thickness, dictated by integrated circuit device scaling, results in physical and electrical property changes that impose limits on their usefulness. We observe, in conclusion, that although Si microelectronic devices...

Static and Dynamic Neural Networks: From Fundamentals to Advanced Theory

Abstract: From the Publisher: Provides comprehensive treatment of the theory of both static and dynamic neural networks. * Theoretical concepts are illustrated by reference to practical examples Includes end-of-chapter exercises and end-of-chapter exercises.

Method and system for creating and validating low level description of electronic design from higher level, behavior-oriented description, including interactive system for hierarchical display of control and dataflow information

Abstract: A technique for hierarchical display of control and dataflow graphs allowing a user to view hierarchically filtered control and dataflow information related to a design. The technique employs information inherent in the design description and information derived from design synthesis to identify "modules" of the design and design hierarchy. The user can specify a level of detail to be displayed for any design element or group of design elements. Any CDFG (control and dataflow graph) object can be "annotated" with a visual attribute or with text to indicate information about the design elements represented by the object. For example, block size, interior color, border color, line thickness, line style, etc., can be used to convey quantitative or qualitative information about a CDFG object. Examples of information which can be used to "annotate" objects include power dissipation, propagation delay, the number of HDL statement represented, circuit area, number of logic gates, etc. The user is able to expand and/or compress CDFG blocks either "in-place" on a higher level CDFG display or to be displayed in isolation. Simulation-related data can also be used to annotate the CDFG. By viewing CDFG's (particularly annotated CDFG's) for a variety of trial designs, a problem-solving user can gain quick insight into the effects and effectiveness of various design choices.