Showing papers by "Military Academy published in 1985"
TL;DR: In this article, the authors present a physical model for the description of transport phenomena in heterogeneous vidicon targets consisting of polycrystalline and amorphous semiconductors.
Abstract: Publisher Summary This chapter presents the development of a physical model for the description of transport phenomena in heterogeneous vidicon targets consisting of crystalline (polycrystalline) and amorphous semiconductors. The SnO 2 –CdSe–As 2 Se 3 target is a representative of such a structure. The chapter discusses the principal properties required for a high-quality vidicon target. There are two ways to prepare an amorphous-crystalline heterogeneous structure: (1) to build in an interface states density σ s , creating at the interface a charge of density. The interface charge is compensated by a bulk charge in the crystalline semiconductor, which results in a depletion layer ensuring low-dark current, high photoconductivity, and low- capacitance of the target. (2) Second, it is possible to place a thin insulating film of thickness δ between both materials. This film has to be thin enough to enable carrier transport by tunnelling. The chapter presents experimental results that are interpreted by means of a model, based on built-in interface states. E. H. Rhoderick presented formally identical results using a model with insulating film. Theoretical models describing the transport in amorphous-crystalline junctions exhibit some peculiarities in contrast to their purely crystalline counterparts.