Military Academy

About: Military Academy is a based out in . It is known for research contribution in the topics: Population & Fuzzy logic. The organization has 2478 authors who have published 3003 publications receiving 33188 citations.

Studying Different Aspects of Social Adaptation

Abstract: The paper presents analyses of different aspects of social adaptation - social and psychological, moral and legal. The accent on the individual and the group behavior is substantiated by the review of the classical understanding in different subjects which provides for a complex view and understanding of the social adaptation as a process. The study makes important conclusions on the need of further research in the concept and its framework.

Extensive Reading and Incidental Vocabulary Acquisition: The Case of a Predominant Language Classroom Input

Abstract: A considerable body of research has investigated the effectiveness of extensive reading on incidental vocabulary acquisition in second language (L2) learners. However, we still know very little about the relationship between extensive reading and vocabulary development among Saudi learners of English as a foreign language (EFL) where language classroom is the predominant source of learning, if not the only one. In the present case study, a single participant was instructed to read extensively for eight weeks as an informal activity outside the classroom. The participant’s written receptive vocabulary knowledge was measured before and after the treatment. Results indicated that extensive reading contributed largely to the participant’s vocabulary gain, suggesting that a vocabulary uptake of about eight words from extensive reading intervention has occurred compared to about two words per contact hour from language classroom input where reading texts are short and scattered throught the textbook. Finding is interpreted in order to provide some pedagogical recommendations.

Obtaining impact ionization-induced hole current by electrical measurements in gallium nitride metal–insulator–semiconductor high electron mobility transistors

Abstract: In this paper, a new extraction method for measuring impact ionization-induced hole current in gallium nitride (GaN) metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) is proposed. The results show that the non-monotonic impact ionization current characteristic can be easily acquired by the extraction method. Further, different hot-carrier stress conditions can be obtained based on the IG–VG curve, and the reliability tests can act as verification of the impact-ionization curve. In addition, electrical reliability tests indicate that the threshold voltage (VTH) shift and on-state current (Ion) degradation in the MIS-HEMTs have a positive correlation to impact ionization-generated hole current. During hot-carrier stress operation, the VTH will shift positively and Ion decreases due to hot electrons trapping into the GaN layer. This model is validated by TCAD simulation.