Mitsubishi

About: Mitsubishi is a company organization based out in Tokyo, Japan. It is known for research contribution in the topics: Layer (electronics) & Signal. The organization has 53115 authors who have published 54821 publications receiving 870150 citations. The organization is also known as: Mitsubishi Group of Companies & Mitsubishi Companies.

Multi-bank synchronous semiconductor memory device

Abstract: A plurality of memory banks are activated to select a memory cell in response to a bank select signal from a bank select signal generating circuit. When a special mode of operation is designated, a mode setting circuit activates all of bank select signals from the bank select signal generating circuit to simultaneously drive all memory banks to active/inactive state. Thus, a multi-bank, a synchronous semiconductor memory device capable of accessing memory cells at high speed and efficiently selecting memory cells is obtained.

Image pick-up apparatus for detecting and enlarging registered objects

Abstract: An image pick-up apparatus having an optical zoom mechanism and an electronic zoom mechanism, wherein the optical zoom mechanism and the electronic zoom mechanism are adjusted in accordance with information on a position and size of an area recognized as an object (a human face). An image pick-up apparatus in which the control gain for restoring the rotating lens barrel to a reference position is increased by static detection of a housing, thereby attaining a compatibility between a high vibration-proofing performance and a high-accuracy origin restoration. A motion vector detection apparatus, in which by making the motion vector detection area movable, a motion vector is detected without any feeling of disorder regardless of the image pattern. An image swing correction apparatus is also disclosed in which the phase of a read clock of a video memory is adjusted in accordance with the result of detection of a time-base error of the video signal, and read out by a clock of regular intervals. The time base of the video signal is thus corrected while at the same time moving the read position of the video memory in accordance with the result of detection of the swing amount of the whole image, thereby correcting the swing of the whole image.

Harmonic current and reactive power compensation with an active filter

Abstract: A static VAr compensator (SVC) using an active filter has been developed that compensates reactive power, harmonic current, negative-phase current, and voltage fluctuations. The system configuration is described, and five types of control scheme for the filter, which are based on practical applications for various loads, and the performance characteristics for each type of control are analyzed. The active filter is shown by simulation to be more effective for suppressing arc-furnace flicker than the TCR (thyristor-controlled-reactor) SVC. >

Network architecture for home energy management system

Abstract: This paper describes a network architecture for home energy management system (HEMS). To realize HEMS, networked appliances with control/monitor capabilities and home network without new wiring are indispensable. However, appliances with no expansive functions and conventional power-line carrier communication deteriorated by its interference have made it difficult to built advanced HEMS. We propose network architecture to solve these problems. The network capability is divided to, minimum interface software embedded in appliance and a separated network adapter. This architecture gives appliances network-ready capabilities without increasing cost. Dispersed-tone power line communication (DTPLC) was also developed for no-new-wire network. DTPLC modem avoids narrow-band power line noise and co-exists with conventional narrow-band power line communication. Network adapter with DTPLC modem was implemented and the network architecture proved effective in the field evaluation of HEMS.

Thin-film solar cell

Abstract: A method for producing a thin-film solar cell having a thin-film active layer on a graphite sheet substrate includes the steps of adhering two sheets of graphite together, forming semiconductor thin films serving as active layers on second main surfaces of the two sheets of graphite, and separating the two sheets of graphite from each other. In this structure, stress caused by a difference in expansion coefficients between the upper sheet and the semiconductor thin film is cancelled by stress caused by a difference in expansion coefficients between the lower sheet and the semiconductor thin film. Therefore, curvature of the substrates is prevented whereby subsequent process steps are easily carried out. In addition, the number of products per unit time is doubled, thereby increasing productivity.