Mitsubishi

About: Mitsubishi is a company organization based out in Tokyo, Japan. It is known for research contribution in the topics: Signal & Layer (electronics). The organization has 53115 authors who have published 54821 publications receiving 870150 citations. The organization is also known as: Mitsubishi Group of Companies & Mitsubishi Companies.

Circulating vascular endothelial growth factor (VEGF) is a possible tumor marker for metastasis in human hepatocellular carcinoma.

Abstract: Vascular endothelial growth factor (VEGF) is closely related to angiogenesis in various human cancers. However, little is known of its circulating levels in hepatocellular carcinoma (HCC). We examined circulating VEGF levels in chronic liver disease to assess their clinical significance. Plasma VEGF concentrations were determined, by enzyme immunoassay, in patients with chronic hepatitis (CH; n = 36), liver cirrhosis (LC; n = 77), and HCC (n = 86) for a cross-sectional study. Plasma VEGF levels in healthy controls (n = 20) and CH, LC, and HCC patients were 17.7 +/- 5.4 (mean +/- SD), 30.6 +/- 22.8, 34.4 +/- 27.0, and 51.1 +/- 71.9 pg/ml, respectively. The levels were significantly elevated in the HCC group, compared with the control, CH, and LC groups. Plasma VEGF levels in stage I, II, III, IVA, and IVB HCC patients were 27.6 +/- 16.1, 26.5 +/- 13.7, 35.8 +/- 15.3, 45.4 +/- 39.4, and 103.1 +/- 123.2 pg/ml, respectively. The stage IVB patients with remote metastasis showed significantly marked elevation compared with the patients at the other stages. Platelet numbers were weakly correlated with plasma VEGF levels in the HCC group. Plasma VEGF level was highly elevated in patients with HCC, particularly those with metastatic disease. We consider that plasma VEGF is a possible tumor marker for metastasis of HCC. Circulating VEGF may be derived mainly from the large burden of tumor cells, and partly from platelets activated by the vascular invasion of HCC cells.

Semiconductor integrated circuit device having a memory and an operational unit integrated therein

Abstract: A semiconductor integrated circuit device includes a memory cell array for storing data to be processed, and an operational unit for effecting a predetermined operation on the data read from the memory cell array. The memory cell array has first and second regions for storing first and second data words of first and second groups. The first data words and second data words each include a plurality of data bits. The first region includes a plurality of bit arrays for storing data bits of the same digit in the first data words, and the second region includes a plurality of bit arrays for storing data bite of the same digit in the second data words. The bit arrays of the first and second groups are arranged alternately in the order of digits of the data words. The bit arrays storing the data bits of the same digit form one subarray. The data bits in one data word are stored in the same positions of the bit arrays. The operational unit includes operational circuits each corresponding to one of the subarrays. Each operational circuit effects the predetermined operation on the data read from the two bit arrays in the corresponding subarray. Each bit array has selectors responsive to external addresses to select one column from each bit array and connect this column to a corresponding operational circuit.

Beam supply device

Abstract: A beam supply device for supplying a particle or radiation beam to therapy or experiment equipment includes a beam generation device 1, a pre-branching beam transportation device 2, a rotatable deflection electromagnet 3, a rotatable beam transportation device 4, and a plurality of beam utilization rooms 5 disposed around the rotational axis of the rotatable deflection electromagnet 3 at a predetermined distance therefrom. The rotatable deflection electromagnet 3 and the rotatable beam transportation device 4 are rotated together to a predetermined rotational angle, such that the beam is guided to the room in which the beam is to be utilized.

Pressure storage fuel injection system

Abstract: A pressure storage (common rail) fuel injection system for an engine is provided, in which the fuel injection pressure rise response when quickly accelerating the engine is improved, engine output shortage is prevented, engine noise is reduced, and improvement is made with respect to soot generation and exhaust gas particulation. A booster (100) is provided to boost pressurized fuel fed out from a pressure storage (36) with a directional control valve (105) for piston operation. It is switched between low pressure fuel injection in which fuel from the pressure storage (36) is fed directly to a fuel injection valve (18) for injection, and high pressure fuel injection in which fuel having been boosted by the booster (100) is fed to the fuel injection valve (18) for injection by a directional control valve (105) for fuel injection control.