Mitsubishi

About: Mitsubishi is a company organization based out in Tokyo, Japan. It is known for research contribution in the topics: Signal & Layer (electronics). The organization has 53115 authors who have published 54821 publications receiving 870150 citations. The organization is also known as: Mitsubishi Group of Companies & Mitsubishi Companies.

Mice containing a human chromosome 21 model behavioral impairment and cardiac anomalies of Down’s syndrome

Abstract: Trisomy 21 (Ts21) is the most common live-born human aneuploidy; it results in a constellation of features known as Down's syndrome (DS). Ts21 is the most frequent cause of congenital heart defects and the leading genetic cause of mental retardation. To investigate the gene dosage effects of an extra copy of human chromosome 21 (Chr 21) on various phenotypes, we used microcell-mediated chromosome transfer to create embryonic stem (ES) cells containing Chr 21. ES cell lines retaining Chr 21 as an independent chromosome were used to produce chimeric mice with a substantial contribution from Chr 21-containing cells. Fluorescence in situ hybridization and PCR-based DNA analysis revealed that Chr 21 was substationally intact but had sustained a small deletion. The freely segregating Chr 21 was lost during development in some tissues, resulting in a panel of chimeric mice with various mosaicism as regards retention of the Chr 21. These chimeric mice showed a high correlation between retention of Chr 21 in the brain and impairment in learning or emotional behavior by open-field, contextual fear conditioning and forced swim tests. Hypoplastic thymus and cardiac defects, i.e. double outlet right ventricle and riding aorta, were observed in a considerable number of chimeric mouse fetuses with a high contribution of Chr 21. These chimeric mice mimic a wide variety of phenotypic traits of DS, revealing the utility of mice containing Chr 21 as unique models for DS and for the identification of genes responsible for DS.

Method for predicting the three-dimensional topography of surfaces of semiconductor devices after reflow processing

Abstract: A method of predicting the three-dimensional topography of a surface of a semiconductor device including a flowable material includes establishing reflow process conditions including a total process time; establishing a grid of three-dimensional cells encompassing at least part of a semiconductor device and including a flowable material; specifying the concentration of a flowable material in each cell; establishing polygonal surfaces of constant flowable material concentration that extend amongst the cells; calculating the chemical potential of each constant concentration polygonal surface; calculating the surface flux of flowable material between adjacent polygonal surfaces; calculating the material flow between cells for a time interval .increment.t less than the process time by multiplying the surface flux by the time .increment.t; determining the flowable material concentration in each cell after the material flow; repeating the foregoing steps from establishing the polygonal surfaces of constant concentration through determining the flowable material concentration in each cell for successive time intervals .increment.t until the sum of the time intervals reaches the specified process time; and, thereafter, establishing as the three-dimensional surface of the flowable material a surface of constant concentration of the flowable material.