Mitsubishi

About: Mitsubishi is a company organization based out in Tokyo, Japan. It is known for research contribution in the topics: Signal & Layer (electronics). The organization has 53115 authors who have published 54821 publications receiving 870150 citations. The organization is also known as: Mitsubishi Group of Companies & Mitsubishi Companies.

A novel form of filamentous graphite

Abstract: CARBONACEOUS materials exist in many forms, with structures varying in the degree of structural order from diamond and hexagonal graphite to the less-ordered chars, soots and coals. Traditionally, graphite is produced from the less-ordered forms of carbon by exposing them to severe conditions of high temperature and pressure. Recently, there has been much interest in preparing highly ordered phases under relatively benign conditions. For example, diamond has been synthesized at low pressures1,2, and carbon deposition on transition-metal catalysts has been shown to produce highly graphitic phases in a variety of morphologies3,4. Here we show that disproportionation of carbon monoxide (2CO →C+CO2) catalysed by small iron-containing particles gives rise to a remarkably continuous stacking of fine graphitic layers on flat surfaces of the particles, producing carbon filaments with a ribbon-like morphology. Transmission electron microscopy reveals that stacking of the layers is not only very ordered but also unusual in being orientated perpendicular to the ribbon surface. These filaments may provide unique opportunities for studies of surface adsorption, catalysis and intercalation.

Development and migration of Purkinje cells in the mouse cerebellar primordium.

Abstract: The mode of Purkinje cell migration in the mouse cerebellar primordium was examined immunohistochemically, by marking Purkinje cells with anti-spot 35 antibody and labeling them with 5′-bromodeoxyuridine. The cells migrated radially from the neuroepithelium of the fourth ventricle towards the cortical surface between the 13th and 17th days (E13–E17) of gestation. Regional differences in the migratory process were evident: the final settlement of the Purkinje cells proceeded earlier in the lateral and posterior parts of the primordium, exhibiting latero-medial and posteroventral-anterodorsal diminishing sequences. To elucidate the factors involved in the migration, the arrangement of radial glial fibers, and expression of the cell adhesion molecule, tenascin, were examined immunohistochemically with the monoclonal antibody 1D11, a marker for both immature and mature astroglia, and an anti-tenascin antibody. At E14, 1D11-immunopositive fibers were seen to extend from the ventricle to the pial surface, and the cell bodies of immature glia migrated after E15 towards the cortex, shortening the radial processes whose end-feet were attached to the pia mater. Tenascin, which possesses a neuron-glial adhesiveness, was also expressed on the radial fibers during the migration of the Purkinje cells. The fibers were closely apposed to the migratory Purkinje cells, and their arrangement and orientation accorded with the migratory direction of the Purkinje cells. Further, changes in the molecular species of antigens detected by both the 1D11 and anti-tenascin antibodies were observed by immunoblotting analysis during the course of cerebellar development. These findings suggest that the arrangement of radial glia and expression of adhesion molecules may be involved in the control and guidance of Purkinje cell migration.

Gas turbine exhaust recirculation method and apparatus

Abstract: To improve the thermal efficiency when an exhaust heat recovery type combined cycle plant having a gas turbine and a steam turbine in combination is operated at a partial load, the gas turbine exhaust is recirculated and returned to the compressor, and the combustion temperature is prevented from being lowered at the partial load. Preferably, the temperature is maintained constant. In this way, the thermal efficiency during operation at partial load can be improved.

Nearly Ideal Current–Voltage Characteristics of Schottky Barrier Diodes Formed on Hydride-Vapor-Phase-Epitaxy-Grown GaN Free-Standing Substrates

Abstract: The current–voltage characteristics of Schottky barrier diodes formed on GaN(0001) free-standing substrates with net donor concentrations of 7.6×1015–1.4×1017 cm-3 are discussed. The substrates were grown by hydride vapor phase epitaxy. Ni Schottky contacts were directly formed on chemical–mechanical-polished Ga-polar faces of the substrates. Nearly ideal characteristics for both directions were obtained. The ideality factors for forward characteristics are 1.02–1.05, very close to unity. The reverse characteristics agree well with calculations based on thermionic-field emission theory without any fitting parameter.