Mitsubishi

About: Mitsubishi is a company organization based out in Tokyo, Japan. It is known for research contribution in the topics: Layer (electronics) & Signal. The organization has 53115 authors who have published 54821 publications receiving 870150 citations. The organization is also known as: Mitsubishi Group of Companies & Mitsubishi Companies.

Plasminogen Activator Inhibitor 1 Promotes a Poor Prognosis in Sepsis-Induced Disseminated Intravascular Coagulation

Abstract: Sepsis-induced disseminated intravascular coagulation (DIC) is a serious condition because it is closely linked to the development of multiple organ dysfunctions.We compared molecular fibrinolysis markers for 117 patients with sepsis-induced DIC and 1627 patients with nonseptic DIC. Levels of fibrinogen and fibrin degradation products and D-dimer were significantly lower in sepsis-induced DIC cases than in nonseptic DIC cases. In septic DIC cases, plasma plasminogen activator inhibitor 1 (PAI-1) levels were significantly higher than in nonseptic DIC cases. D-dimer levels were negatively correlated with plasma PAI-1 levels in septic DIC cases. Multiple Organ Dysfunction Scores were significantly higher in septic DIC patients with PAI-1 levels >90 ng/mL than in the group with PAI-1 levels 90 ng/mL than in the other groups. In a multivariate analysis, plasma PAI-1 levels at DIC diagnosis were an independent risk factor for mortality in sepsis-induced DIC (hazard ratio, 1.012; P = .008). These data suggest that plasma PAI-1 plays an important role in sustaining DIC in septic DIC cases and contributes to multiple organ failure and decreased survival in such patients.

Semiconductor device and method of manufacturing same

Abstract: Provided are a semiconductor device that optimizes the operation characteristics such as of both an insulating gate type transistor for high voltage and an insulating gate type transistor for low voltage, and a method of manufacturing the same. Specifically, a patterned resist ( 25 ) is formed so as to cover a low voltage operation region (A 2 ), a second LDD implantation process of implanting an impurity ion ( 14 ) by using the resist ( 25 ) as a mask, is performed over a silicon oxide film ( 6 ) thereby to form an impurity diffusion region ( 13 ) in the surface of a semiconductor substrate ( 1 ) in a high voltage operation region (A 1 ). After this step, the silicon oxide film ( 6 ) in the high voltage operation region (A 1 ) contains the impurity during the second LDD implantation process whereas the silicon oxide film ( 6 ) in a low voltage operation region (A 2 ) contains no impurity. This leads to such a characteristic that in the following pre-treatment with a wet process, the silicon oxide film ( 6 ) containing the impurity in the high voltage operation region (A 1 ) is reduced in thickness, and the silicon oxide film ( 6 ) containing no impurity in the low voltage operation region (A 2 ) is not reduced in thickness.

Lossy/lossless region-of-interest image coding based on set partitioning in hierarchical trees

Abstract: We have incorporated a region-of-interest (RoI) coding functionality into Said and Pearlman's (see IEEE. Trans. CSVT, vol.6, p.243-50, 1996) SPIHT coding with integer transforms. By placing a higher emphasis on the transform coefficients pertaining to the RoI, the RoI is coded with higher fidelity than the rest of the image in earlier stages of progressive reconstruction thus the "important" part of the image is reconstructed more quickly than the rest of the image. This method significantly saves transmission time and storage space by terminating encoding or transmission in situations where the RoI needs to be coded losslessly and the rest of the image visually losslessly (lossy). In our model, the RoI can be flexibly specified either in the beginning or in the middle of the encoding process (either on the original image or on the full- or low-resolution image reconstructed by the decoder), through interaction with the user at the transmitting or the receiving end. Also, the speed with which the quality of the RoI improves in progressive decoding is flexibly specified by the user at either end. The proposed method is especially advantageous in an application where the image is browsed interactively, e.g. telemedicine.

Method of manufacturing semiconductor device

Abstract: A method of manufacturing a semiconductor device which is capable of forming a gate structure having dimensions as designed is provided. A silicon oxide film (4), a polysilicon film (5) and a silicon oxide film (6) are formed in the order named on a silicon substrate (1). Then, the silicon oxide film (6) is patterned to form silicon oxide films (14a, 14b). Next, a photoresist (15) is applied, and is then exposed to light using a photomask (18) for defining the ends of gate structures (25i-25k) as seen in a direction of a gate width. Next, the photoresist (15) is developed to form openings (21s-21u). Using the photoresist (15) as an etch mask, portions of the silicon oxide films (14a, 14b) exposed in the openings (21s-21u) are etched away.

Arx homeobox gene is essential for development of mouse olfactory system.

Abstract: The olfactory system provides an excellent model in which to study cell proliferation, migration, differentiation, axon guidance, dendritic morphogenesis, and synapse formation. We report here crucial roles of the Arx homeobox gene in the developing olfactory system by analyzing its mutant phenotypes. Arx protein was expressed strongly in the interneurons and weakly in the radial glia of the olfactory bulb, but in neither the olfactory sensory neurons nor bulbar projection neurons. Arx-deficient mice showed severe anatomical abnormalities in the developing olfactory system: (1) size reduction of the olfactory bulb, (2) reduced proliferation and impaired entry into the olfactory bulb of interneuron progenitors, (3) loss of tyrosine hydroxylase-positive periglomerular cells, (4) disorganization of the layer structure of the olfactory bulb, and (5) abnormal axonal termination of olfactory sensory neurons in an unusual axon-tangled structure, the fibrocellular mass. Thus, Arx is required for not only the proper developmental processes of Arx-expressing interneurons, but also the establishment of functional olfactory neural circuitry by affecting Arx-non-expressing sensory neurons and projection neurons. These findings suggest a likely role of Arx in regulating the expression of putative instructive signals produced in the olfactory bulb for the proper innervation of olfactory sensory axons.