Mitsubishi

About: Mitsubishi is a company organization based out in Tokyo, Japan. It is known for research contribution in the topics: Layer (electronics) & Signal. The organization has 53115 authors who have published 54821 publications receiving 870150 citations. The organization is also known as: Mitsubishi Group of Companies & Mitsubishi Companies.

Slip control system for a clutch

Abstract: A torque transmitting system for transmitting torque from a drive shaft of an engine to an output shaft without transmitting torque variation comprises a friction clutch unit interposed between these shafts, a fluid pressure-operated actuating unit for engaging and disengaging the friction clutch unit, and vibration detecting means detecting vibration occurring in the engine or the torque transmitting system. In the system, means are provided for controlling the pressure of actuating fluid supplied to the fluid pressure-operated actuating unit on the basis of the output signal from the vibration detecting means thereby adjusting the difference between the rotation speed of the drive shaft and that of the output shaft, whereby the torque can be transmitted from the drive shaft to the output shaft without any substantial variation.

Charge accumulation on insulating spacers for HVDC GIS

Abstract: A capacitive probe measurement that can be used to quantify the charge density on solid insulators is introduced. Studies performed in the development of a +or-125 kV high-voltage DC (HVDC) gas-insulated converter station and +or- 500 kV HVDC switchgear (HVDC-GIS) are reviewed. The properties and mechanisms of surface charging, the optimum design of the spacer and its breakdown characteristics are summarized. Problems associated with capacitive probe measurement of surface charge and a practical solution to obtain the charge distribution on the spacer are presented. >

Semiconductor device comprising trench EEPROM

Abstract: Each of source regions (4) is provided only immediately below a bottom surface (3B) of each of trenches (3) which is formed in a silicon substrate (1), extending inward from a main surface (1S) thereof along a second direction, and each of gate electrode portions (23) is provided inside each of the trenches (3). Specifically, each of the gate electrode portions (23) consists of a gate oxide film (19) formed on a side surface (S1) and part of the bottom surface (3B) of the trench (3), an FG electrode (20) formed thereon, a gate insulating film (21) formed on a side surface of the FG electrode (20) which is out of contact with the gate oxide film (19), an upper surface of the FG electrode (20), a side surface (2S) and the other part of the bottom (3B) of the trench (3), and a CG electrode (22) formed so as to cover an upper surface of the gate insulating film (21). Each of drain regions (11) is shared by the two adjacent transistors. The device configuration as above achieves reduction in area of the gate electrode portions (23) and further reduction in each level difference between both regions having and not having the gate electrode portion (23). Thus, reduction in level difference of each memory cell is achieved while reduction in area of each memory cell is ensured.

Ring rolling process simulation by the three dimensional finite element method

Abstract: The finite element code “RING” was developed for the analysis of ring rolling. A special feature of the program is the updating procedure in three-dimensional deformation. A spatially fixed mesh system including deforming region of the workpiece is constructed based on the shape changes of the ring at each time step. Several simulations are performed with the program “RING”, and the results are compared with experimental data found in the literature. Good agreement between the simulation results and experiments was obtained in terms of geometrical changes of rings in plain ring rolling and T-shaped profiled ring rolling.

Switched substrate bias for logic circuits

Abstract: A semiconductor circuit or a MOS-DRAM wherein converting means is provided that converts substrate potential or body bias potential between two values for MOS-FETs in a logic circuit, memory cells, and operating circuit of the MOS-DRAM, thereby raising the threshold voltage of the MOS-FETs when in the standby state and lowering it when in active state. The converting means includes a level shift circuit and a switch circuit. The substrate potential or body bias potential is controlled only of the MOS-FETs which are nonconducting in the standby state; this configuration achieves a reduction in power consumption associated with the potential switching. Furthermore, in a structure where MOS-FETs of the same conductivity type are formed adjacent to each other, MOS-FETs of SOI structure are preferable for better results.