Mitsubishi

About: Mitsubishi is a company organization based out in Tokyo, Japan. It is known for research contribution in the topics: Signal & Layer (electronics). The organization has 53115 authors who have published 54821 publications receiving 870150 citations. The organization is also known as: Mitsubishi Group of Companies & Mitsubishi Companies.

Image display device and adjustment for alignment

Abstract: An image display device comprises an optical imaging arrangement for providing image information to illumination light and for transmitting the light as an optical image signal; a display for receiving the optical image signal and for displaying an image based on the image information; and a projecting optical arrangement including a reflecting part having a reflecting surface for reflecting the optical image signal, and a refracting optical part having a refracting surface for projecting the optical image signal onto the reflecting part. At least one of the reflecting surface and the refracting surface is aspherical.

Semiconductor integrated circuit device having hierarchical power source arrangement

Abstract: A variable impedance power supply line and a variable impedance ground line supplying voltages VCL1 and VSL1, respectively, are set to a low impedance state in a stand-by cycle and in a row related signal set period, and to a high impedance state in a column circuitry valid time period. Variable impedance power supply line and variable impedance ground line supplying voltages VCL2 and VSL2, respectively, are set to a high impedance state in the stand-by cycle, and low impedance state in the active cycle and in the row related signal reset time period. Inverters operate as operating power supply voltage of voltages VCL1 and VSL2 or voltages VCL2 and VSL1, in accordance with a logic level of an output signal in the stand-by cycle and in the active cycle. Thus a semiconductor memory device is provided in which subthreshold current in the stand-by cycle and active DC current in the active cycle can be reduced.

High Brightness Blue InGaN/GaN Light Emitting Diode on Nonpolar $m$-plane Bulk GaN Substrate

Abstract: Improved nonpolar m-plane (1100) light emitting diode (LED) with a thick InGaN active layer of 8 nm and a thick GaN barrier layer of 37.5 nm for multi-quantum-well (MQW) structure have been fabricated on low extended defect bulk m-plane GaN substrates using metal organic chemical vapor deposition (MOCVD). The peak wavelength of the electroluminescence (EL) emission from the packaged LED was 468 nm. The output power and external quantum efficiency (EQE) were 8.9 mW and 16.8%, respectively, at a DC driving current of 20 mA.

GABA(B) receptor activation enhances mGluR-mediated responses at cerebellar excitatory synapses.

Abstract: Metabotropic gamma-aminobutyric acid type B (GABAB) and glutamate receptors (mGluRs) are postsynaptically co-expressed at cerebellar parallel fiber (PF)-Purkinje cell (PC) excitatory synapses, but their functional interactions are unclear. We found that mGluR1 agonist-induced currents and [Ca2+]i increases in PCs were enhanced following co-activation of GABAB receptors. A GABAB antagonist and a G-protein uncoupler suppressed these effects. Low-concentration baclofen, a GABAB agonist, augmented mGluR1-mediated excitatory synaptic current produced by stimulating PFs. These results indicate that postsynaptic GABAB receptors functionally interact with mGluR1 and enhance mGluR1-mediated excitatory transmission at PF-PC synapses. The interaction between the two types of metabotropic receptors provides a likely mechanism for regulating cerebellar synaptic plasticity.