Mitsubishi

About: Mitsubishi is a company organization based out in Tokyo, Japan. It is known for research contribution in the topics: Layer (electronics) & Signal. The organization has 53115 authors who have published 54821 publications receiving 870150 citations. The organization is also known as: Mitsubishi Group of Companies & Mitsubishi Companies.

Multiple address-space data processor with addressable register and context switching

Abstract: Two or more address spaces are provided in a data processor. One of the address spaces comprises control registers so that the control registers can be accessed using instructions having an address in the second address space. High-speed context switching can be accomplished by allotting the context-saving area to the second address space. The context can be saved in various formats specified by a context format register.

Semiconductor device and manufacturing method thereof

Abstract: A semiconductor device with capacitors which have a structure wherein fluctuation in thickness does not occur, even in the case that a dielectric film of low coverage is used. The semiconductor device is provided with adjoining first and second capacitors, wherein the respective capacitor is provided with lower electrode, dielectric film which contacts the top surface of the lower electrode and which has peripheral sidewall surfaces that continue to the peripheral sidewall surfaces of the lower electrode, first upper electrode that contacts the top surface of the dielectric film and a second upper electrode that contacts the top surface of the first upper electrode and the semiconductor device is further provided with a partition insulating film which covers the sidewall surfaces of lower electrode and the dielectric layer between the capacitors so that the second upper electrode contacts the top surface of the partition insulating film.

Method for predicting the three-dimensional topography of surfaces of semiconductor devices after reflow processing

Abstract: A method of predicting the three-dimensional topography of a surface of a semiconductor device including a flowable material includes establishing reflow process conditions including a total process time; establishing a grid of three-dimensional cells encompassing at least part of a semiconductor device and including a flowable material; specifying the concentration of a flowable material in each cell; establishing polygonal surfaces of constant flowable material concentration that extend amongst the cells; calculating the chemical potential of each constant concentration polygonal surface; calculating the surface flux of flowable material between adjacent polygonal surfaces; calculating the material flow between cells for a time interval INCREMENT t less than the process time by multiplying the surface flux by the time INCREMENT t; determining the flowable material concentration in each cell after the material flow; repeating the foregoing steps from establishing the polygonal surfaces of constant concentration through determining the flowable material concentration in each cell for successive time intervals INCREMENT t until the sum of the time intervals reaches the specified process time; and, thereafter, establishing as the three-dimensional surface of the flowable material a surface of constant concentration of the flowable material.

Spread spectrum receiving apparatus

Abstract: A receiving apparatus includes a base-band conversion circuit, a synchronizing circuit/code generator and a demodulator. The base-band conversion circuit converts a received signal into a base-band signal. The synchronizing circuit/code generator detects a spread code included in the received signal to generate a plurality of spread codes in synchronization with the spread code included in the received signal. The demodulator uses the plurality of spread codes supplied by the synchronizing circuit/code generator to demodulate the base-band signal.