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Institution

Mitsubishi Electric

CompanyRatingen, Germany
About: Mitsubishi Electric is a company organization based out in Ratingen, Germany. It is known for research contribution in the topics: Signal & Voltage. The organization has 23024 authors who have published 27591 publications receiving 255671 citations. The organization is also known as: Mitsubishi Electric Corporation & Mitsubishi Denki K.K..


Papers
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Patent
18 Jun 2007
TL;DR: In this paper, the authors describe a position detecting device that is able to accurately detect an indicated position via an indicating unit or device even when a water droplet or the like is formed upon the position-detecting device's surface.
Abstract: An object is to provide a position detecting device that is able to accurately detect an indicated position via an indicating unit or device even when a water droplet or the like is formed upon the position-detecting-device's surface. The position detecting device comprises: a light-guide plate (1) for placement upon a displaying surface of a displaying device, and made of a translucent material; an emitting unit (2) for emitting, from the sides of the light-guide plate (1), arranged in line along the X-axis and the Y-axis, a plurality of light beams each of a predetermined width, so as to be totally reflected thickness-wise within the light-guide plate (1) and to travel heading in predetermined directions parallel to the plane of the light-guide plate (1); an emission-control unit (3) for controlling the emitting unit (2) so as to make the light beams each scan the light-guide plate (1) in progression along the sides thereof, in an X-axis direction and in a Y-axis direction; at least one indicating device (4) having a light-guiding part (41) for guiding, by contacting the light-guide plate (1), thereinto light traveling within the light-guide plate (1), and a detection unit (42) for outputting, by detecting the light guided via the light-guiding part (41), a detection signal; and a coordinate calculating unit (43) for calculating, based on a scanned position derived from the detection signal and the emission-control unit (3), a coordinate position where the at least one indicating device (4) contacts the light-guide plate (1).

61 citations

Patent
18 Aug 2005
TL;DR: In this article, the authors proposed a method to stabilize a pointer displayed within an output image, which enables the user to zoom in on areas of interest in the output image and to make accurate selections with the stabilized pointer.
Abstract: The invention provides a method to stabilize a pointer displayed within an output image. The method enables the user to magnify selected areas within the output image. This allows the user to ‘zoom’ in on areas of interest in the output image, and to make accurate selections with the stabilized pointer. Design features of the method enable pixel and sub-pixel accurate pointing, which is not possible with most conventional direct pointing devices. The invention can be worked for 2D and 3D pointers.

61 citations

Patent
15 Feb 2010
TL;DR: In this article, the authors proposed a method for manufacturing a silicon carbide semiconductor device having constant characteristics with reduced variations in forward characteristics using a Schottky junction between the first metal layer and the epitaxial layer.
Abstract: An object of the invention is to provide a method for manufacturing a silicon carbide semiconductor device having constant characteristics with reduced variations in forward characteristics. The method for manufacturing the silicon carbide semiconductor device according to the invention includes the steps of: (a) preparing a silicon carbide substrate; (b) forming an epitaxial layer on a first main surface of the silicon carbide substrate; (c) forming a protective film on the epitaxial layer; (d) forming a first metal layer on a second main surface of the silicon carbide substrate; (e) applying heat treatment to the silicon carbide substrate at a predetermined temperature to form an ohmic junction between the first metal layer and the second main surface of the silicon carbide substrate; (f) removing the protective film; (g) forming a second metal layer on the epitaxial layer; and (h) applying heat treatment to the silicon carbide substrate at a temperature from 400° C. to 600° C. to form a Schottky junction of desired characteristics between the second metal layer and the epitaxial layer.

60 citations

Patent
31 Mar 2005
TL;DR: In this paper, the authors propose a transmission control method for E-TFC that selects transmission control information according to a combination of user data transmitted via a transport channel, from an upper layer, and a step of transmitting the transmission control, as well as a physical channel into which two or more transport channels are multiplexed, to a fixed station, including at least transmit power information.
Abstract: Conventionally, there is a problem that a state transition of E-TFC changes according to QoS for descriptions of data to be transmitted, and therefore a mobile station's operation is not decided uniquely. To solve this problem, a transmission control method in accordance with the present invention includes a step of selecting transmission control information according to a combination of user data transmitted, via a transport channel, from an upper layer, and a step of transmitting the transmission control information, as well as a physical channel into which two or more transport channels are multiplexed, to a fixed station, the transmission control information including at least transmit power information.

60 citations

Proceedings ArticleDOI
11 Jun 2006
TL;DR: In this article, the authors presented compact 90-and 180-degree directional couplers incorporating bandpass characteristics, which can integrate a bandpass filter and a power-divider/combiner in an RF transceiver, resulting in its miniaturization.
Abstract: Compact 90- and 180-degree directional couplers incorporating bandpass characteristics are presented. They can integrate a bandpass filter and a power-divider/combiner in an RF transceiver, resulting in its miniaturization. The bandpass directional coupler can be represented as a coupled-resonator network, and its coupling coefficients and external-Q can be determined from a desired coupling ratio and operational bandwidth of the bandpass coupler. Measured results are also presented on a Ku-band bandpass 180-degree directional coupler with TE 01delta-mode dielectric resonators

60 citations


Authors

Showing all 23025 results

NameH-indexPapersCitations
Ron Kikinis12668463398
William T. Freeman11343269007
Takashi Saito112104152937
Andreas F. Molisch9677747530
Markus Gross9158832881
Michael Wooldridge8754350675
Ramesh Raskar8667030675
Dan Roth8552328166
Joseph Katz8169127793
James S. Harris80115228467
Michael Mitzenmacher7942236300
Hanspeter Pfister7946623935
Dustin Anderson7860728052
Takashi Hashimoto7398324644
Masaaki Tanaka7186022443
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20224
2021327
20201,060
20191,605
20181,517
20171,090