Mitsubishi Electric

About: Mitsubishi Electric is a company organization based out in Ratingen, Germany. It is known for research contribution in the topics: Signal & Voltage. The organization has 23024 authors who have published 27591 publications receiving 255671 citations. The organization is also known as: Mitsubishi Electric Corporation & Mitsubishi Denki K.K..

An erasures-and-errors decoding algorithm for Goppa codes (Corresp.)

Abstract: An erasures-and-errors decoding algorithm for Goppa codes is presented. Given the Goppa polynomial and the modified syndrome polynomial, a modified key equation is solved using Euclid's algorithm to determine the error locator polynomial and the errata evaluator polynomial.

Image display apparatus

Abstract: An image display apparatus includes a parallax-barrier shutter panel including a plurality of sub-pixels arranged widthwise, the sub-pixels each being changeable between a light transmittance state and a light block state by driving a liquid crystal layer held between a first transparent substrate and a second transparent substrate with a first transparent electrode extending lengthwise. The first transparent substrate includes in a display area, a lower-layer first transparent electrode disposed under an interlayer insulating film and an upper-layer first transparent electrode disposed on the interlayer insulating film, the lower-layer first transparent electrode and the upper-layer first transparent electrode being the first transparent electrode. The first transparent substrate includes in an area adjacent to the display area, a lower-layer metal wire disposed under the interlayer insulating film and an upper-layer metal wire disposed on the interlayer insulating film. A lower-layer transparent electrode is connected to the lower-layer metal wire.

Electric double-layer capacitor

Abstract: An electric double-layer capacitor includes: a positive electrode containing a carbon material; a negative electrode containing a carbon material and a titanium oxide; and an electrolytic solution containing an ammonium salt A weight ratio of the titanium oxide to the carbon material contained in the negative electrode is 2% by weight or more but not more than 50% by weight

Silicon carbide semiconductor device and method of manufacturing the same

Abstract: It is expected that both reduction of the resistance of a source region and reduction of a leakage current in a gate oxide film be achieved in an MOSFET in a silicon carbide semiconductor device. A leakage current to occur in a gate oxide film of the MOSFET is suppressed by reducing roughness at an interface between a source region and the gate oxide film. If an impurity concentration is to become high at a surface portion of the source region, the gate oxide film is formed by dry oxidation or CVD process. If the gate oxide film is formed by wet oxidation, the impurity concentration at the surface portion of the source region is controlled at a low level.