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Institution

Mitsubishi Electric

CompanyRatingen, Germany
About: Mitsubishi Electric is a company organization based out in Ratingen, Germany. It is known for research contribution in the topics: Signal & Voltage. The organization has 23024 authors who have published 27591 publications receiving 255671 citations. The organization is also known as: Mitsubishi Electric Corporation & Mitsubishi Denki K.K..


Papers
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Journal ArticleDOI
TL;DR: Quantum key distribution with pulsed heralded single photon source was performed over 40 km of fiber and QBER was measured to be 4.23% suggesting security against unconditional attack.
Abstract: Quantum key distribution with pulsed heralded single photon source was performed over 40 km of fiber for the first time to our knowledge. QBER was measured to be 4.23% suggesting security against unconditional attack.

50 citations

Patent
30 Oct 2009
TL;DR: In this article, the authors propose a gateway unit which relays communication between a call control network and a terminal having no call control function, which includes a session control section which substitutively performs call control processing in call control communication performed by the terminal by way of the call controller network.
Abstract: A gateway unit which relays communication between a call control network and a terminal having no call control function. The gateway unit includes: a session control section which substitutively performs call control processing in call control communication performed by the terminal by way of the call control network and reports a band required for the call control communication to the call control network; and a band adjustment section which determines an updated value of a band of the call control communication based on a communication packet in the call control communication, received from the terminal. The session control section reports the updated value to the call control network as the band required by the call control communication.

50 citations

Journal ArticleDOI
TL;DR: A practical laser Doppler velocimeter with optical fibers in the whole system was developed; vibration amplitude down to 1.0 microm p-p can be measured at a frequency of 120 Hz with high accuracy.
Abstract: A practical laser Doppler velocimeter with optical fibers in the whole system was developed. The novel optical probe designed for this LDV is constructed of a graded-index rod lens attached to the end of an optical fiber. Since the laser beam from the probe is well collimated, the velocity accuracy and sensitivity are significantly improved. Mechanical vibration measurements were also carried out with this LDV; vibration amplitude down to 1.0 μm p-p can be measured at a frequency of 120 Hz with high accuracy.

50 citations

Patent
25 Feb 1991
TL;DR: In this paper, a semiconductor integrated circuit is described, which includes a circuit block, a plurality of boundary scan registers, a system data terminal, a test signal terminal and a control circuit.
Abstract: A semiconductor apparatus including a semiconductor integrated circuit is disclosed. The semiconductor integrated circuit includes a circuit block, a plurality of boundary scan registers, a system data terminal, a test signal terminal and a control circuit. The control circuit responds to a test signal to generate control signals (a select signal LT, shift clock signals SCLK1 and SCLK2, a capture clock signal CPCLK and an update clock signal UPCLK) for controlling the boundary scan registers. The boundary scan registers are connected in cascade to each other and each connected to the circuit block. Each boundary scan register includes a selector circuit (12) and latch circuits (13, 14, 15). The latch circuit (13) responds to the shift clock signal SCLK1 to shift data of an adjacent preceding boundary scan register, an also responds to the update clock signal UPCLK to capture data from the selector circuit (12). The selector circuit (12) responds to the select signal LT to select system data or test data. The latch circuit (14) responds to the shift clock signal SCLK2 to shift the captured data to an adjacent succeeding boundary scan register. The latch circuit (15) responds only to the update clock signal UPCLK to apply the selected data to the circuit block.

50 citations

Journal ArticleDOI
TL;DR: In this article, a detailed experimental study of low-temperature carrier trapping in GaAs/${\mathrm{Al}}_{\mathrm{\ensuremath{-}}\mathm{x}}$As single quantum wells with 5 nm and 1.2 nm thickness, respectively, with different confinement structures.
Abstract: This paper reports detailed experimental studies of low-temperature carrier trapping in GaAs/${\mathrm{Al}}_{\mathrm{x}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathrm{x}}$As single quantum wells with 5 nm and 1.2 nm thickness, respectively, with different confinement structures. Trapping efficiency and trapping dynamics are studied by means of photoluminescence, photoluminescence excitation spectroscopy, and picosecond luminescence spectroscopy. We obtain trapping efficiencies of about 40% for both the single quantum wells without additional confinement and separate-confinement-heterostructure quantum wells. The percentage of trapped carriers increases to about 60% to 80% for quantum wells cladded by graded-index separate-confinement heterostructures with parabolic band-gap profile. The maximum trapping efficiency of about 100% has been observed for a separate-confinement heterostructure with a linear band-gap profile. Interlayer well width fluctuations are found to be unimportant for the trapping behavior in our samples. Trapping times are appreciably shorter than the rise times of the quantum well photoluminescence, which are between 60 and 100 ps for the different structures. Surface recombination in the 0.2-\ensuremath{\mu}m-thick ${\mathrm{Al}}_{\mathrm{x}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathrm{x}}$As cladding layer does not reduce the trapping efficiency of the single quantum well without additional confinement compared with the separate-confinement heterostructure. An effective trapping area with about 80 nm width can be deduced on the basis of these results for the quantum-well structures with ungraded cladding layers.

50 citations


Authors

Showing all 23025 results

NameH-indexPapersCitations
Ron Kikinis12668463398
William T. Freeman11343269007
Takashi Saito112104152937
Andreas F. Molisch9677747530
Markus Gross9158832881
Michael Wooldridge8754350675
Ramesh Raskar8667030675
Dan Roth8552328166
Joseph Katz8169127793
James S. Harris80115228467
Michael Mitzenmacher7942236300
Hanspeter Pfister7946623935
Dustin Anderson7860728052
Takashi Hashimoto7398324644
Masaaki Tanaka7186022443
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20224
2021327
20201,060
20191,605
20181,517
20171,090