Mitsubishi Electric

About: Mitsubishi Electric is a company organization based out in Ratingen, Germany. It is known for research contribution in the topics: Signal & Voltage. The organization has 23024 authors who have published 27591 publications receiving 255671 citations. The organization is also known as: Mitsubishi Electric Corporation & Mitsubishi Denki K.K..

Mulit-screen display device

Abstract: A multi-screen display device of the present invention includes a master liquid crystal display device and one or more slave liquid crystal display devices which are mutually communicable with each other. Each of the liquid crystal display devices includes an LCD panel, a brightness sensor, brightness adjustment value adjustment means, and backlight control means. The brightness sensor is provided on a rear face side of the LCD panel, and detects the brightness of a backlight. The brightness adjustment value adjustment means adjusts a brightness adjustment value based on a result of comparison between a brightness measured by the brightness sensor and target brightness. The backlight control means adjusts the brightness of the LCD panel by controlling a time period for lighting the backlight based on the brightness adjustment value. The master liquid crystal display device further has target brightness adjustment means for receiving the brightness adjustment values from the slave liquid crystal display devices and adjusting the target brightness based on the brightness adjustment values of all of said liquid crystal display devices including the master liquid crystal display device itself.

Cogging-force-reduction techniques for linear permanent-magnet machines

Abstract: The paper describes two techniques for reducing the cogging force associated with the finite length of the ferromagnetic armature core of a tubular permanent-magnet machine. Analytical expressions for predicting the cogging force which is associated with armature cores having skewed or stepped end faces are established, and a cogging-force-minimisation technique is employed to determine an optimal armature-core length. The validity of the analytical cogging-force predictions and the effectiveness of the cogging-force-reduction techniques are verified by three-dimensional finite-element analyses and experimental measurements.

A fast short-circuit protection method using gate charge characteristics of SiC MOSFETs

Abstract: This paper describes a fast protection circuit for silicon carbide metal-oxide semiconductor field-effect transistors (SiC MOSFETs) subjected to hard-switching faults (HSFs). In terms of reliability of power converters, the protection of power semiconductors against short-circuit failures is of great concern. The reverse transfer capacitance increases with decreasing drain-source voltage during normal turn-on transient. Under HSF conditions, on the other hand, it hardly changes because the drain-source voltage remains high. As a consequence, quite a significant difference appears in gate charge characteristics between under HSF conditions and normal turn-on operation. Hence, an HSF can be detected by monitoring both the gate- source voltage and the amount of gate charge. The proposed protection circuit has high noise tolerance because it monitors not only the gate-source voltage but also the amount of gate charge. The validity of the protection circuit is verified by experiment. The proposed protection circuit can detect the HSF within only one microsecond.

Source-to-drain nonuniformly doped channel (NUDC) MOSFET structures for high current drivability and threshold voltage controllability

Abstract: The source-to-drain nonuniformly doped channel (NUDC) MOSFET has been investigated to improve the aggravation of the V/sub th/ lowering characteristics and to prevent the degradation of the current drivability. The basic concept is to change the impurity ions to control the threshold voltage, which are doped uniformly along the channel in the conventional channel MOSFET, to a nonuniform profile of concentration. The MOSFET was fabricated by using the oblique rotating ion implantation technique. As a result, the V/sub th/ lowering at 0.4- mu m gate length of the NUDC MOSFET is drastically suppressed both in the linear region and in the saturation region as compared with that of the conventional channel MOSFET. Also, the maximum carrier mobility at 0.4- mu m gate length is improved by about 20.0%. Furthermore, the drain current is increased by about 20.0% at 0.4- mu m gate length. >