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Institution

Mitsubishi Electric

CompanyRatingen, Germany
About: Mitsubishi Electric is a company organization based out in Ratingen, Germany. It is known for research contribution in the topics: Signal & Voltage. The organization has 23024 authors who have published 27591 publications receiving 255671 citations. The organization is also known as: Mitsubishi Electric Corporation & Mitsubishi Denki K.K..


Papers
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Journal ArticleDOI
TL;DR: In this article, the authors describe the present state and future prospect of the art of industrial lasers used or to be used for fine cutting of metal plates, and present and future technologies such as the novel laser resonator for the CO 2 laser and the LD (Laser Diode) pumping for the Nd:YAG laser.

41 citations

Journal ArticleDOI
TL;DR: This letter describes a robust voice activity detector using an ultrasonic Doppler sonar device that can be implemented in real time and seen to be very effective and robust to noise.
Abstract: This letter describes a robust voice activity detector using an ultrasonic Doppler sonar device. An ultrasonic beam is incident on the talker's face. Facial movements result in Doppler frequency shifts in the reflected signal that are sensed by an ultrasonic sensor. Speech-related facial movements result in identifiable patterns in the spectrum of the received signal that can be used to identify speech activity. These sensors are not affected by even high levels of ambient audio noise. Unlike most other non-acoustic sensors, the device need not be taped to a talker. A simple yet robust method of extracting the voice activity information from the ultrasonic Doppler signal is developed and presented in this letter. The algorithm is seen to be very effective and robust to noise, and it can be implemented in real time.

41 citations

Patent
02 Jun 2015
TL;DR: In this article, a method of manufacturing a semiconductor device, which includes forming a laser section on a portion of a substrate, the laser section including an active layer, an upper semiconductor layer on the active layer and a mask on the mask, is described.
Abstract: A method of manufacturing a semiconductor device, includes forming a laser section on a portion of a substrate, the laser section including an active layer, an upper semiconductor layer on the active layer, and a mask on the upper semiconductor layer; forming a compound semiconductor layer of an indium-containing material in contact with a side of the laser section, the compound semiconductor layer having a projection immediately adjacent the laser section; and wet etching and removing the projection with an etchant containing hydrobromic acid and acetic acid, planarizing the compound semiconductor layer, and producing a (111)A surface in the upper semiconductor layer, under the mask

41 citations

Patent
22 Jun 1970
TL;DR: A laser shaping apparatus for automatically shaping a workpiece with a laser and for providing automatic control so that the focal point of the laser light which is focused by a lens always corresponds with the point on the workpiece which is being shaped as mentioned in this paper.
Abstract: A laser shaping apparatus for automatically shaping a workpiece with a laser and for providing automatic control so that the focal point of the laser light which is focused by a lens always corresponds with the point on the workpiece which is being shaped.

41 citations

Patent
05 Jun 1995
TL;DR: In this article, a postburn-in test, a high temperature test, and a low temperature test are carried out to a plurality of chips belonging to the first group simultaneously, and to an equal number of the second group simultaneously.
Abstract: According to a time required for programing operation, respective chips of flash memories are divided into a first group and a second group of chips requiring a time longer than the first group for the programing operation, and a postburn-in test, a high temperature test, and a low temperature test are carried out to a plurality of chips belonging to the first group simultaneously, and to a plurality of chips belonging to the second group simultaneously.

41 citations


Authors

Showing all 23025 results

NameH-indexPapersCitations
Ron Kikinis12668463398
William T. Freeman11343269007
Takashi Saito112104152937
Andreas F. Molisch9677747530
Markus Gross9158832881
Michael Wooldridge8754350675
Ramesh Raskar8667030675
Dan Roth8552328166
Joseph Katz8169127793
James S. Harris80115228467
Michael Mitzenmacher7942236300
Hanspeter Pfister7946623935
Dustin Anderson7860728052
Takashi Hashimoto7398324644
Masaaki Tanaka7186022443
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20224
2021327
20201,060
20191,605
20181,517
20171,090