Mitsubishi Electric

About: Mitsubishi Electric is a company organization based out in Ratingen, Germany. It is known for research contribution in the topics: Signal & Voltage. The organization has 23024 authors who have published 27591 publications receiving 255671 citations. The organization is also known as: Mitsubishi Electric Corporation & Mitsubishi Denki K.K..

FAce MOUSe: A novel human-machine interface for controlling the position of a laparoscope

Abstract: Robotic laparoscope positioners are now expected as assisting devices for solo surgery among endoscopic surgeons. In such robotic systems, the human-machine (surgeon-robot) interface is of paramount importance because it is the means by which the surgeon communicates with and controls the robotic camera assistant. We have designed a novel human-machine interface, called "FAce MOUSe", for controlling the position of a laparoscope. The proposed human interface is an image-based system which tracks the surgeon's facial motions robustly in real time and does not require the use of any body-contact devices, such as head-mounted sensing devices. The surgeon can easily and precisely control the motion of the laparoscope by simply making the appropriate face gesture, without hand or foot switches or voice input. Based on the FAce MOUSe interface, we have developed a new robotic laparoscope positioning system for solo surgery. Our system allows nonintrusive, nonverbal, hands off and feet off laparoscope operations, which seem more convenient for the surgeon. To evaluate the performance of the proposed system and its applicability in clinical use, we set up an in vivo experiment, in which the surgeon used the system to perform a laparoscopic cholecystectomy on a pig.

(Ba, Sr)TiO3 Films Prepared by Liquid Source Chemical Vapor Deposition on Ru Electrodes

Abstract: Electrical properties of (Ba, Sr)TiO3 [BST] films have been investigated on RuO2/Ru and Ru electrodes instead of Pt, because they are easy to be etched. BST films were deposited at a substrate temperature of T s=420° C and a reactor pressure of P=1.5 Torr by employing a two-step liquid source chemical vapor deposition (CVD) process. BST films on RuO2/Ru were electrically shorted, which was considered to be caused by surface roughening during BST film deposition and/or post-annealing. In the case of Ru electrodes, an equivalent SiO2 thickness of t eq=0.50 nm (a dielectric constant of e r=190), a leakage current of J L=4.6×10-8 A/cm2 at +1.1 V, and a dielectric loss of tan δ=0.018 were achieved at a total film thickness of 250 A, by restricting Ru surface oxidation and its surface roughening. Moreover, BST film deposition on Ru storage nodes, 0.24 µ m wide, 0.6 µ m deep, 0.15 µ m high, and each spaced by 0.3–0.14 µ m, verified that the storage capacitance can be successfully increased by using sidewalls of the storage node, without a significant increase in the leakage current.

System for classifying an individual's gaze direction

Abstract: A system is provided to classify the gaze direction of an individual in which frequently occurring head poses of the individual are automatically identified and labelled according to their association with the surrounding objects. In conjunction with processing of eye pose, each observed head pose of the individual is automatically associated with a bin in a "pose-space histogram". This histogram records the number of occurrences of different head poses over an extended period of time. Given observations of a car driver, for example, the pose-space histogram develops peaks over time corresponding to the frequently viewed directions of toward the dashboard, toward the mirrors, toward the side window, and straight-ahead. Each peak is labelled using a qualitative description of the environment around the individual, such as the approximate relative directions of dashboard, mirrors, side window, and straight-ahead in the car example. The labelled histogram is then used to classify the head pose of the individual in all subsequent images.

A low power SRAM using auto-backgate-controlled MT-CMOS

Abstract: We have been proposed a low power SRAM using an effective method called “ABC-MT-CMOS” [1]. It controls the backgates to reduce the leakage current when the SRAM is not activated (sleep mode) while retaining the data stored in the memory cells. We also adopted a “CSB Scheme” which clamps both the source lines of the memory cell array and the bit lines. We designed and fabricated test chips containing a 32K-bit gate array SRAM. The experimental results show that the leakage current is reduced to 1/1000 in sleep mode. The active power is 0.27 mW/MHz at 1 V, which is a reduction of 1/12 of a conventional SRAM with a 3.3 V.