Mitsubishi Electric

About: Mitsubishi Electric is a company organization based out in Ratingen, Germany. It is known for research contribution in the topics: Signal & Voltage. The organization has 23024 authors who have published 27591 publications receiving 255671 citations. The organization is also known as: Mitsubishi Electric Corporation & Mitsubishi Denki K.K..

IEEE 1901 access system: An overview of its uniqueness and motivation

Abstract: In 2005 the IEEE P1901 Working Group began standardization activities for broadband over power line networks. The process is now in its final stages, and the latest P1901 draft standard is available for sale to the public. The standard is designed to meet both in-home multimedia and utility application requirements including smart grid. The utility requirements and the resulting features that support those requirements were clustered together and form the basis of what is referred to as the utility access cluster. This article explains the aspects of P1901 power line communication technologies designed to address the access cluster. The differences between access and in-home applications, including addressing methods, clock synchronization, smart repetition, quality of service, power saving, and other access unique mechanisms, are also explained.

Photolithography system using annular illumination

Abstract: Photolithography is a leading technique in LSI device fabrication. The LSI pattern size has approached the exposure wavelength such as the g or i-line of a Hg lamp. This fact indicates that the shorter wavelength or some novel technique will be needed in order to cope with finer patterns. It is known that annular illumination can improve the depth of focus and resolution. We applied the annular illumination method to the step and repeat exposure system. Experiments and simulations using annular illumination were carried out and subhalf-micron patterns were produced. The process latitudes of the annular illumination method are evaluated.

Electrical Breakdown of Long Gaps in Sulfur Hexafluoride

Abstract: The electrical discharge characteristics of SF6 are discussed theoretically in relation to the field dependence of the ionization coefficient a and the electron attachment coefficient The results are compared with the characteristics of air. A simple theoretical formulation of breakdown or corona inception voltages of gaps in SF6 is derived. The formulation has been examined by experiments on several electrode configurations. At low pressures of less than 4 atm, the agreement of the theoretical and the experimental results is fairly good. The breakdown voltage decreases from the theoretical estimation at higher pressure.

Investigation of Acidic Texturization for Multicrystalline Silicon Solar Cells

Abstract: A new texturing method especially for multicrystalline silicon solar cells was investigated. This technique is based on a maskless acidic etching of silicon. It can texturize surfaces quite homogeneously in a short time and eliminate a saw damage removal process. The authors showed phosphoric acid (H{sub 3}PO{sub 4}) is preferable as a catalytic agent to moderate etching rates without effecting texturing. A simulation was carried out in an attempt to achieve lower reflectance. It was found that the reflectance is dependent on the quotient of the depth and the width of texture (h/D). The authors found that surface active agents are effective in increasing the h/D value. The reflectance decreases corresponding to h/D, and measured reflectance is in good agreement with the simulation. Comparing the electrical characteristics of an acidic textured multicrystalline solar cell and an alkaline textured one, the short-circuit current density of acidic texturing is higher than the other.

Design parameters of frequency response of GaAs—(Ga,Al)As double heterostructure LED's for optical communications

Abstract: Cutoff frequency of GaAs-(Ga,Al)As double heterostructure light-emitting diodes (LED's) is investigated as functions of design parameters, such as hole concentration of the active layer, thickness of the layer, and injected current density. The cutoff frequency increases with increasing the hole concentration and injection current density, and with decreasing the active layer thickness. They are theoretically explained by the simple equation proposed in this paper by setting the recombination constant B to be 1.1 × 10-10cm3/s. A tradeoff between the cutoff frequency and the efficiency as a function of the hole concentration is discussed. By introducing a new idea of the "figure of merit" as a product of the cutoff frequency and the efficiency, the hole concentration is optimized to be 3 × 1018cm-3for Ge-doped active layer.