Mitsubishi Electric

About: Mitsubishi Electric is a company organization based out in Ratingen, Germany. It is known for research contribution in the topics: Signal & Voltage. The organization has 23024 authors who have published 27591 publications receiving 255671 citations. The organization is also known as: Mitsubishi Electric Corporation & Mitsubishi Denki K.K..

Multi-band radio communication method and base station

Abstract: In a radio communication system simultaneously providing a communication service by using a plurality of discontinuous frequency bands, a multi-band radio communication method allocates a band for a mobile station requested to start communication by a base station constituting the system. For example, a particular reception unit in the base station extracts control information on the channel state of each frequency band and recognizes the reception-enabled frequency band from the extraction result. A channel control unit (9) judges whether a new traffic corresponding to the communication start request can be allocated successively in the descending order of the high frequency band.

Wireless communication system and communication control method

Abstract: The present invention relates to a wireless communication system that performs data communication using a spatial multiplex transmission scheme. A mobile station includes a transmission weight calculating unit that calculates a transmission weight and a beam information notifying signal generating unit that transmits a known signal for generating partial space information at a base station side. A base station includes a scheduling unit (DL spatial scheduling unit (17), UL spatial scheduling unit (18), and beam information notifying signal response vector estimating unit (20)) that generates the partial space information based on a received first known signal, and performs downstream scheduling and upstream scheduling based on the partial space information, and a scheduling result transmitting unit (UL control information generating unit (14) and transmission weight calculating unit (19)) that transmits a packet including an upstream scheduling result.

A non contact IC card and a non contact IC card system

Abstract: In a non contact IC card for generating a power supply voltage from electric waves transmitted via wireless communication from a base unit, a reset signal generating circuit is provided to reset the internal circuits when the power supply voltage rises to reach a predetermined operating voltage and when it is lowered below a minimum voltage of voltages which ensure the normal operation of the internal circuits, thereby operations such as a writing operation in the internal circuits can be made stable and the time required for communication can be shortened.

Static semiconductor storage device

Abstract: PROBLEM TO BE SOLVED: To provide a fast static semiconductor storage device with a small layout area SOLUTION: A global word line GWL, a bit line load power-source wiring BVL, a local data input/output line pair LIO /LIO, a bit line signal input/output line pair BL'/BL', and a memory cell power-source wiring MVL and global column selecting line GYL, eight wirings in total, are arranged with constant intervals above a memory block MB comprising a landscape-type memory cell MC with 8-row and 256-column Since a single wiring is required per a single memory cell row, an SRAM of T-type bit line structure is easily configured using the landscape-type memory cell MC, resulting in a smaller layout area and faster operation speed

Remarkable Increase in the Channel Mobility of SiC-MOSFETs by Controlling the Interfacial $\hbox{SiO}_{2}$ Layer Between $\hbox{Al}_{2}\hbox{O}_{3}$ and SiC

Abstract: The impact of a thin SiO2 layer inserted between Al2O3 and SiC on channel mobility in AI2O3/SiC MOSFETs was investigated. The remarkable increase in the channel mobility is demonstrated when the SiO2 thickness is around 1 nm. The thin SiO2 layer is formed by the thermal oxidation of the SiC substrate at 600 or 800degC in O2 atmosphere. The peak value of the field-effect mobility in AI2O3/SiO2/SiC MOSFETs is as high as 300 cm2 / (V ldr s). On the other hand, when the SiO2 layer is 2.0 nm, the field-effect mobility drastically reduces to 40 cm2/ (V ldr s), which is most likely due to the high interface trap density as seen in conventional SiO2/SiC MOSFETs.