Motilal Nehru National Institute of Technology Allahabad

About: Motilal Nehru National Institute of Technology Allahabad is a education organization based out in Allahabad, Uttar Pradesh, India. It is known for research contribution in the topics: Computer science & Control theory. The organization has 2475 authors who have published 5067 publications receiving 61891 citations. The organization is also known as: NIT Allahabad & Motilal Nehru Regional Engineering College.

Alloying, magnetic and corrosion behavior of AlCrFeMnNiTi high entropy alloy

Abstract: The present report describes phase formation, magnetic and corrosion behavior of the AlCrFeMnNiTi high entropy alloy (HEA) synthesized through mechanical alloying. Simple solid solution of FCC and BCC phases are evolved after 25 h of MA. DSC analysis confirms that the synthesized phases of AlCrFeMnNiTi HEA are stable up to 550 °C and a re-crystallization is occurred at temperature greater than 550 °C. In order to investigate the effect of annealing on phase formation and magnetic characteristics, the synthesized HEA was annealed at 700 °C for 1 h and found that the volume fraction of BCC phase decreased. The synthesized HEA shows better ferromagnetic behavior with Ms = 17.55 emu/g and Hc = 153.8 Oe as compared to some of the recently reported HEAs and previously reported CrFeMnNiTi HEA by us. Moreover, corrosion behavior of the annealed AlCrFeMnNiTi high entropy alloy in 0.5 M and 1 M NaCl solution is also investigated. It is found that the annealed HEA shows good corrosion resistance in 0.5 M NaCl solution due to the presence of Al.

Comparative Performance Analysis of XOR- XNOR Function Based High-Speed CMOS Full Adder Circuits For Low Voltage VLSI Design

Abstract: This paper presents comparative study of high-speed, low-power and low voltage full adder circuits. Our approach is based on XOR-XNOR design full adder circuits in a single unit. A low power and high performance 9T full adder cell using a design style called “XOR (3T)” is discussed. The designed circuit commands a high degree of regularity and symmetric higher density than the conventional CMOS design style as well as it lowers power consumption by using XOR (3T) logic circuits. Gate Diffusion Input (GDI) technique of low-power digital combinatorial circuit design is also described. This technique helps in reducing the power consumption and the area of digital circuits while maintaining low complexity of logic design. This paper analyses, evaluates and compares the performance of various adder circuits. Several simulations conducted using different voltage supplies, load capacitors and temperature variation demonstrate the superiority of the XOR (3T) based full adder designs in term of delay, power and power delay product (PDP) compared to the other full adder circuits. Simulation results illustrate the superiority of the designed adder circuits against the conventional CMOS, TG and Hybrid full adder circuits in terms of power, delay and power delay product (PDP).

Buckling of laminated composite plates subjected to mechanical and thermal loads using meshless collocations

Abstract: Meshless collocations utilizing Gaussian and Multiquadric radial basis functions for the stability analysis of orthotropic and cross ply laminated composite plates subjected to thermal and mechanical loading are presented. The governing differential equations of plate are based on higher order shear deformation theory considering two different transverse shear stress functions. The plate governing differential equations are discretized using radial basis functions to cast a set of simultaneous equations. The convergence of both radial basis functions is studied for different values of shape parameters. Several numerical examples are undertaken to demonstrate the accuracy of present method and the effects of orthotropy ratio of the material, span to thickness ratio of the plate, and fiber orientation on critical load/temperature are also presented.

Communication time delay estimation for load frequency control in two-area power system

Abstract: Due to increased size and complexity of power system network, the stability and load frequency control (LFC) is of serious concern in a wide area monitoring system (WAMS) having obtained signals from phasor measurement unit (PMU). The quality of services (QoS) for communication infrastructure in terms of signal delay, packet loss probability, queue length, throughput is very important and must be considered carefully in the WAMS based thermal power system. However, very few studies have been presented that includes QoS for communication infrastructure in load frequency control (LFC) of power system. So this paper presents LFC for two area thermal power system based on estimated time delay and packet loss probability using the Markovian approach. The delay and packet loss probability are modeled by different math functions. Normally, frequency deviation signal is transmitted from remote terminal unit (RTU) to control center and from control center to individual control unit of plants. The delay incurred is located in the forward loop of PSO based PI/PID controller in the form of transport delay. To verify the efficacy of controller performance, the estimated constant delay and time varying delay are applied to the controller in the two area thermal-thermal power system with and without governor dead band (GDB) and generation rate constraints (GRC) for various loads conditions. The study is further demonstrated for time delay, being compensated by 2nd order Pade approximation. The results show that frequency deviation is minimum in terms of stability and transient response.

Sensitivity enhancement using silicon-black phosphorus-TDMC coated surface plasmon resonance biosensor

Abstract: The proposed configuration of surface plasmon resonance (SPR) biosensor consists of layers of the black phosphorus (BP), transition metal dichalcogenides (TMDC), i.e. WS 2 , WSe 2 nanomaterials and silicon (Si). Sensitivity, minimum reflectivity (R min ) and full-width half maxima are calculated as performance parameters. The maximum sensitivity of 184.6°/RIU is achieved without TMDCs. After incorporation of single-layer TMDCs as a protective layer for BP, the sensitivity of 163.1°/RIU is obtained for a single layer of WS 2 . This decrement in sensitivity is due to absorption properties of TMDCs. The proposed result shows that the sensitivity of proposed biosensor having Si, BP with TMDCs is better in comparison to results obtained for Si-graphene and Si-TMDCs-based SPR biosensor in the existing literature.