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Institution

Motorola

CompanySchaumburg, Illinois, United States
About: Motorola is a company organization based out in Schaumburg, Illinois, United States. It is known for research contribution in the topics: Signal & Communications system. The organization has 27298 authors who have published 38274 publications receiving 968710 citations. The organization is also known as: Motorola, Inc. & Galvin Manufacturing Corporation.


Papers
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Patent
Laura L. McPheters1
15 Aug 1994
TL;DR: In this paper, a method for determining when a radio leaves a radio talk group includes the step of notifying a radio(s), such as the initiator of the call (step 308), that one or more members of the talk group left.
Abstract: A method for determining when a radio leaves a radio talk group includes the step of notifying a radio(s), such as the initiator of the call (step 308), that one or more members of the talk group left the talk group. This information allows for the initiator of the call or another radio to re-transmit the call at a later date, or to attempt to get the missing radios back into the talk group prior to transmitting another call.

153 citations

Patent
31 Dec 1997
TL;DR: In this paper, an envelope-following unit is used to output a supply voltage in accordance with a variable envelope of an input baseband signal, wherein using the efficient envelope following unit includes: 1) using a bandwidth-limiting mapping unit to determine a reference signal based on the base band signal; and 2) using an envelope tracking power converter to output the supply voltage, responsive to the reference signal, to the linear RF power amplifier.
Abstract: A method (200) and device (100) provide an efficient linear power amplifier that generates a variable-envelope radio frequency RF signal. The method includes the steps of: A) using an efficient envelope-following unit to output a supply voltage in accordance with a variable envelope of an input baseband signal, wherein using the efficient envelope-following unit includes: 1) using a bandwidth-limiting mapping unit to determine a reference signal based on the baseband signal; and 2) using an envelope-tracking power converter to output a supply voltage, responsive to the reference signal, to the linear RF power amplifier; B) providing an RF input signal with amplitude and phase information to a linear RF power amplifier; and C) using the linear RF power amplifier to output a power-efficient amplified variable-envelope RF signal with substantially a same amplitude and phase information as the RF input signal.

152 citations

Patent
08 Dec 1978
TL;DR: In this article, a two-way communications system for use with a host computer includes a control unit, a base station and multiple radio/data terminal units, and an extensive self-diagnostic system is included.
Abstract: A two-way communications system for use with a host computer includes a control unit, a base station and multiple radio/data terminal units. The control unit interfaces directly with the computer but uses a radio link to the portable units. Voice and data signals can be transmitted and data between units is decoded, sorted, stored, encoded, and sent to its destination in accordance with predetermined protocol in queue discipline. An extensive self-diagnostic system is included. An active redundancy arrangement switches between two control units/base stations on a regular schedule if both units are up, and instantaneously if the "on" unit goes down.

152 citations

Journal ArticleDOI
TL;DR: In this article, the melting of an organic phase change material (PCM) n-triacontane (C30H62) in a side heated tall enclosure of aspect ratio 10, by a uniformly dissipating heat source was studied computationally and experimentally.

152 citations

Patent
James R. Pfiester1
30 Mar 1987
TL;DR: In this paper, a process for forming an insulated gate field effect transistor (IGFET) with a semiconductor gate with a central portion and end portions on either side thereof where the portions are of two different conductivity types is described.
Abstract: A process for forming an insulated gate field effect transistor (IGFET) having a semiconductor gate with a central portion and end portions on either side thereof where the portions are of two different conductivity types. Typically, a central portion of the gate, such as a doped polysilicon portion of a first conductivity type, is flanked by end portions near the source/drain regions, where the end portions are doped with an impurity of a second conductivity type. The central portion of the gate is formed by conventional gate patterning whereas the end portions are formed by typical procedures for forming sidewall spacers using a conformal layer of in situ doped polycrystalline silicon (polysilicon) or other semiconductor material and an anisotropic etch.

152 citations


Authors

Showing all 27298 results

NameH-indexPapersCitations
Georgios B. Giannakis137132173517
Yonggang Huang13679769290
Chenming Hu119129657264
Theodore S. Rappaport11249068853
Chang Ming Li9789642888
John Kim9040641986
James W. Hicks8940651636
David Blaauw8775029855
Mark Harman8350629118
Philippe Renaud7777326868
Aggelos K. Katsaggelos7694626196
Min Zhao7154724549
Weidong Shi7052816368
David Pearce7034225680
Douglas L. Jones7051221596
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20232
20229
202129
2020131
2019134
2018144