Institution
Motorola
Company•Schaumburg, Illinois, United States•
About: Motorola is a company organization based out in Schaumburg, Illinois, United States. It is known for research contribution in the topics: Signal & Communications system. The organization has 27298 authors who have published 38274 publications receiving 968710 citations. The organization is also known as: Motorola, Inc. & Galvin Manufacturing Corporation.
Papers published on a yearly basis
Papers
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18 Dec 1997TL;DR: In this paper, a low switching field magnetoresistive tunneling junction memory cell including a first exchange coupled structure having a pair of magnetoregressive layers and an exchange interaction layer sandwiched therebetween so as to pin the magnetic vectors of the pair of layers anti-parallel, and electrically insulating material sandwiched between the first and second exchange coupled structures to form a magnetoresistsistive tunnelling junction.
Abstract: A low switching field magnetoresistive tunneling junction memory cell including a first exchange coupled structure having a pair of magnetoresistive layers and an exchange interaction layer sandwiched therebetween so as to pin the magnetic vectors of the pair of layers anti-parallel, a second exchange coupled structure having a pair of magnetoresistive layers and an exchange interaction layer sandwiched therebetween so as to pin the magnetic vectors of the pair of layers anti-parallel, and electrically insulating material sandwiched between the first and second exchange coupled structures to form a magnetoresistive tunneling junction. Each of the first and second exchange coupled structures, and hence the memory cell, has no net magnetic moment.
151 citations
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TL;DR: In this article, a step growth method was proposed to suppress the oxidation of the substrate surface and thereby achieve oxide films with a high degree of crystallinity, and the epitaxy of high-quality SrTiO3 (STO) thin films directly on Si was achieved.
Abstract: Most semiconductor materials such as Si, Ge, and GaAs are subject to oxidation when exposed to oxidants. This results in difficulties in the heterointegration of epitaxial oxides on these semiconductors. Even though certain oxides may be thermodynamically stable when placed in contact with semiconductors, direct epitaxy of these oxides encounters kinetic difficulties due to the loss of epitaxy caused by the formation of an amorphous oxide at the interface. In this article, we address some important issues on the heteroepitaxy of oxides on semiconductors and show a stepped growth method that utilizes the kinetic characteristics of the growth process to suppress the oxidation of the substrate surface and thereby achieve oxide films with a high degree of crystallinity. The epitaxy of high-quality SrTiO3 (STO) thin films directly on Si was achieved. The chemical and structural properties of the STO/Si interface were evaluated in situ using reflection high-energy electron diffraction, x-ray photoelectron spectroscopy, and scanning tunneling microscopy, and ex situ using transmission electron microscopy and electron energy loss spectroscopy.
151 citations
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07 Oct 1996TL;DR: In this article, a dielectric layer is formed overlying the conductive interconnect and the exposed portions of the silicon nitride etch stop layer to reduce the cross-talk between conductively interconnects.
Abstract: An interconnect structure having a dielectric layer with low dielectric constant is formed within an integrated circuit. In one embodiment of the invention, portions of a silicon dioxide layer (18) lying adjacent to a conductive interconnect (21) are removed to expose portions of a silicon nitride etch stop layer (16). A dielectric layer (22) having a low dielectric constant is then formed overlying the conductive interconnect (21) and the exposed portions of the silicon nitride etch stop layer (16). A portion of the dielectric layer (22) is then removed to expose the top surface of the conductive interconnect (21) to leave portions of the dielectric layer (22) between adjacent conductive interconnects (21). The resulting interconnect structure has reduced cross-talk between conductive interconnects (21) while avoiding prior art disadvantages of reduced thermal dissipation and increased mechanical stress.
151 citations
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10 May 2001TL;DR: In this article, the linear calibration relationship between output signals and blood pressure is applied to the output signals from the set of photo-detectors, resulting in blood pressure data, which provides compensation for changes in hold down pressure and translation or rotation of the optical sensor relative to the patient.
Abstract: An optical sensor (12) generates blood pressure data by obtaining two dimensional images of the surface of the patient's body, such as in the vicinity of the radial artery in the wrist area. Blood flow in the patient causes light to be reflected off a flexible reflective surface (14) applied against the patient with a hold down pressure, and the scattering of light is sensed with a two-dimensional array (17) of photo-detectors (18). The output of the photo-detectors during systolic and diastolic events is calibrated against known blood pressure measurements taken with a conventional air-cuff sphygmomanometer. Linear calibration relationships between output signal and blood pressure (FIG. 25) are obtained during calibration for some set of the photo-detectors. When blood pressure data is obtained from the patient, the linear calibration relationship between output signals and blood pressure is applied to the output signals from the set of photo-detectors, resulting in blood pressure data. The method provides for compensation for changes in hold down pressure and translation or rotation of the optical sensor relative to the patient. A preferred optical sensor arrangement for use in performing the method is also described.
151 citations
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TL;DR: A novel method of reducing power consumption of the ME by adaptively changing the pixel resolution during the computation of the motion vector is proposed, which results in more than 60% reduction in power consumption.
Abstract: Power consumption is very critical for portable video applications such as portable videophone and digital camcorder. Motion estimation (ME) in the video encoder requires a huge amount of computation, and hence consumes the largest portion of power. We propose a novel method of reducing power consumption of the ME by adaptively changing the pixel resolution during the computation of the motion vector. The pixel resolution is changed by masking or truncating the least significant bits of the pixel data, which is governed by the bit-rate control mechanism. Experimental results show that on average more than 4 bits ran be truncated without significantly affecting the picture quality. This results in more than 60% reduction in power consumption.
151 citations
Authors
Showing all 27298 results
Name | H-index | Papers | Citations |
---|---|---|---|
Georgios B. Giannakis | 137 | 1321 | 73517 |
Yonggang Huang | 136 | 797 | 69290 |
Chenming Hu | 119 | 1296 | 57264 |
Theodore S. Rappaport | 112 | 490 | 68853 |
Chang Ming Li | 97 | 896 | 42888 |
John Kim | 90 | 406 | 41986 |
James W. Hicks | 89 | 406 | 51636 |
David Blaauw | 87 | 750 | 29855 |
Mark Harman | 83 | 506 | 29118 |
Philippe Renaud | 77 | 773 | 26868 |
Aggelos K. Katsaggelos | 76 | 946 | 26196 |
Min Zhao | 71 | 547 | 24549 |
Weidong Shi | 70 | 528 | 16368 |
David Pearce | 70 | 342 | 25680 |
Douglas L. Jones | 70 | 512 | 21596 |