Motorola

About: Motorola is a company organization based out in Schaumburg, Illinois, United States. It is known for research contribution in the topics: Signal & Communications system. The organization has 27298 authors who have published 38274 publications receiving 968710 citations. The organization is also known as: Motorola, Inc. & Galvin Manufacturing Corporation.

Virtual Card Selector for a Portable Electronic Device

Abstract: A portable electronic device (100), such as a mobile telephone, portable computer, personal digital assistant, or other similar device, is equipped with a virtual card application (101) configured to manage a plurality of virtual cards (106,107,108,109). Such virtual cards (106,107,108,109) are used in financial and other transactions by way of a wireless near-field transceiver (114) and a near-field communication terminal, such as a payment terminal (115). To provide a user with a seamless, less complex virtual card selection process, an arranger module (102) is configured to determine a priority associated with each of the virtual cards (106,107,108,109). The priority may be determined from location, schedule, calendar, user input, or other means. Once the priority is determined, the virtual card with the foremost priority is advanced as a top of the wallet card (111). The top of the wallet card (111), in one embodiment, is the default card for use in the transaction.

Method of etching a trench into a semiconductor substrate

Abstract: Trench structures (12,32,35,46) are formed in single crystal silicon substrates (10,30) that have either a (110) or (112) orientation. A selective wet etch solution is used that removes only the exposed portions of the single crystal silicon substrates (10,30) that are in the (110) or (112) crystal planes. The trench structures (12,32,35,46) are defined by the {111} crystal planes in the single crystal silicon substrate (10,30) that are exposed during the selective wet etch process. Trench structures (32,35) can be formed on both sides of a single crystal silicon substrate (30) to form an opening (34). Opening (34) can be used as an alignment mark to align front side processing to backside and vice versa. Trench structures can also be use to form a microstructure (41,61) for a sensor (40,60).

A new SONOS memory using source-side injection for programming

Abstract: We reported a new polysilicon-oxide-nitride-oxide-silicon (SONOS) nonvolatile memory using channel hot electron injection for high-speed programming. For the first time, we demonstrated that source-side injection technique, which is commonly used in floating gate nonvolatile memories for its high programming efficiency, can also be used in a SONOS device for achieving high-speed programming. Erase of the device is achieved by tunneling of electrons through the thin top oxide of the ONO charge storage stack. Since the thin top oxide is grown from the nitride layer, the self-saturated nature of the oxidation allows better thickness control. Endurance characteristics indicates that quality of the thin top grown from nitride is as good as the tunnel oxide grown from the silicon substrate. By increasing the top oxide thickness, it is possible to achieve ten years of retention requirement. The self-aligned sidewall gate structure allows small cell size for high density applications.

Semiconductor package capable of spreading heat

Abstract: A package (10, 37, 39) capable of spreading heat from a semiconductor die (25). The package (10, 37) includes a heat spreader (11) having a thickness of approximately 0.2 millimeters and a plurality of heat spreader clearance holes (16). The heat spreader (11) is coated with an adhesive material (17) which fills the plurality of heat spreader clearance holes (16). A substrate layer (18) is formed on the adhesive material (17). The substrate layer (18) has conductive traces (20, 24) and conductive pads (21) disposed thereon. A cavity (23) may be present in the package (10, 37, 39) which exposes a portion of the heat spreader (11) and is adapted to receive the semiconductor die (25). The cavity (23) is covered by a cavity sealing means (30, 38).