Institution
Motorola
Company•Schaumburg, Illinois, United States•
About: Motorola is a company organization based out in Schaumburg, Illinois, United States. It is known for research contribution in the topics: Signal & Communications system. The organization has 27298 authors who have published 38274 publications receiving 968710 citations. The organization is also known as: Motorola, Inc. & Galvin Manufacturing Corporation.
Papers published on a yearly basis
Papers
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23 Jun 2000TL;DR: In this article, a communication network (200, 300 ) stores (502 ) location information for the communication network and a portable device (100 ) determines whether the portable device is in motion.
Abstract: A communication network ( 200, 300 ) stores ( 502 ) location information for the communication network. A portable device ( 100 ) determines ( 504 ) whether the portable device is in motion. The portable device requests ( 510 ) the location information only when the portable device determines itself not to be in motion. The network sends ( 512 ) the location information to the portable device, in response to the request for the location information from the portable unit.
195 citations
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16 Jun 1997TL;DR: In this paper, a network navigation system is provided to perform machine-readable data reading associated with an article of mail, and determining an electronic address based upon the machinereadable data.
Abstract: A network navigation method includes steps of reading machine-readable data (14) associated with an article of mail (12), and determining an electronic address (20) based upon the machine-readable data (14). A network navigation system is provided to perform the aforementioned steps.
195 citations
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26 May 1994TL;DR: In this paper, a ball grid array semiconductor device with a plurality of conductive traces (18), bond posts (20), and conductive vias (22) is mounted to the package substrate.
Abstract: A ball grid array semiconductor device (10) includes a package substrate (14 or 16) having a plurality of conductive traces (18), bond posts (20), and conductive vias (22). A semiconductor die (12) is mounted to the package substrate. Orthogonal wire bonds (28) are used to electrically connect staggered bond pads (26) to corresponding bond posts (20) on the substrate. A liquid encapsulant (40) is used to cover the die, the wire bonds, and portions of the package substrate. In another embodiment, a package substrate (50) includes a lower bonding tier (52) and an upper bonding tier (54). Wire bonds (60) are used to electrically connect an outer row of bond pads (64) to bond posts (20) of lower tier (52), while wire bonds (62) are used to electrically connect an inner row of bond pads (64) to bond posts (20) of an upper tier (54). The loop height of wire bonds (60) is smaller than that of wire bonds (62).
195 citations
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16 Mar 2005TL;DR: In this article, a user interface for an electronic device (and corresponding method) is arranged and constructed for intuitive control of interface functionality, including a speaker, microphone, display backlighting, etc., that is one of a plurality of user interface components.
Abstract: A user interface (103) for an electronic device (101) (and corresponding method) is arranged and constructed for intuitive control of interface functionality. The user interface includes: a user interface component, e.g. speaker, microphone, display backlighting, etc., that is one of a plurality of user interface components (105); interface circuitry (117) coupled to the user interface components (105); and a sensor (129) located in a position that is logically associated with, e.g. proximate to or co-located with, the user interface component and configured to provide an output signal when the sensor (129) is triggered, e.g. by proximity to a user, where the output signal facilitates, via for example a controller (143), a change in an operating mode of one or more of the user interface components (105).
195 citations
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TL;DR: In this paper, a low-power 1-Mb magnetoresistive random access memory (MRAM) based on a one-transistor and one-magnetic tunnel junction (1T1MTJ) bit cell is demonstrated.
Abstract: A low-power 1-Mb magnetoresistive random access memory (MRAM) based on a one-transistor and one-magnetic tunnel junction (1T1MTJ) bit cell is demonstrated. This is the largest MRAM memory demonstration to date. In this circuit, the magnetic tunnel junction (MTJ) elements are integrated with CMOS using copper interconnect technology. The copper interconnects are cladded with a high-permeability layer which is used to focus magnetic flux generated by current flowing through the lines toward the MTJ devices and reduce the power needed for programming. The 25-mm/sup 2/ 1-Mb MRAM circuit operates with address access times of less than 50 ns, consuming 24 mW at 3.0 V and 20 MHz. The 1-Mb MRAM circuit is fabricated in a 0.6-/spl mu/m CMOS process utilizing five layers of metal and two layers of poly.
195 citations
Authors
Showing all 27298 results
Name | H-index | Papers | Citations |
---|---|---|---|
Georgios B. Giannakis | 137 | 1321 | 73517 |
Yonggang Huang | 136 | 797 | 69290 |
Chenming Hu | 119 | 1296 | 57264 |
Theodore S. Rappaport | 112 | 490 | 68853 |
Chang Ming Li | 97 | 896 | 42888 |
John Kim | 90 | 406 | 41986 |
James W. Hicks | 89 | 406 | 51636 |
David Blaauw | 87 | 750 | 29855 |
Mark Harman | 83 | 506 | 29118 |
Philippe Renaud | 77 | 773 | 26868 |
Aggelos K. Katsaggelos | 76 | 946 | 26196 |
Min Zhao | 71 | 547 | 24549 |
Weidong Shi | 70 | 528 | 16368 |
David Pearce | 70 | 342 | 25680 |
Douglas L. Jones | 70 | 512 | 21596 |