Institution
Nagoya Institute of Technology
Education•Nagoya, Japan•
About: Nagoya Institute of Technology is a education organization based out in Nagoya, Japan. It is known for research contribution in the topics: Thin film & Catalysis. The organization has 10766 authors who have published 19140 publications receiving 255696 citations. The organization is also known as: Nagoya Kōgyō Daigaku & Nitech.
Topics: Thin film, Catalysis, Dielectric, Enantioselective synthesis, Turbulence
Papers published on a yearly basis
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TL;DR: In this paper, a method of computer simulation based on a quasi-static computation has been proposed to analyze nanoscale cutting, where the cutting mechanism depends on both the crystalline orientation of a workpiece and the interatomic potential between the tool and workpiece materials.
83 citations
TL;DR: The induction of apoptosis by nitric oxide and peroxynitrite in human dopaminergic neuroblastoma SH‐SY5Y cells and the antiapoptotic activity of (−)‐deprenyl are reported, suggesting that −)‐Deprenyl or related compounds may be neuroprotective to dopamine neurons through its antiapopotic activity.
Abstract: In Parkinson's disease the cell death of dopamine neurons has been proposed to be mediated by an apoptotic death process, in which nitric oxide may be involved. This article reports the induction of apoptosis by nitric oxide and peroxynitrite in human dopaminergic neuroblastoma SH-SY5Y cells and the antiapoptotic activity of (-)-deprenyl. After the cells were treated with a nitric oxide donor, NOR-4, or a peroxynitrite donor, SIN-1, DNA damage was quantitatively studied using a single-cell gel electrophoresis (comet) assay. NOR-4 and SIN-1 induced DNA damage dose-dependently. Cycloheximide and alkaline treatment of the cells prevented the DNA damage, indicating that the damage is apoptotic and that it depends on the intracellular signal transduction. Superoxide dismutase and the antioxidants reduced glutathione and alpha-tocopherol protected the cells from the DNA damage. (-)-Deprenyl protected the cells from the DNA damage induced by nitric oxide or peroxynitrite almost completely. The protection by (-)-deprenyl was significant even after it was washed from the cells, indicating that (-)-deprenyl may activate the intracellular system against apoptosis. These results suggest that (-)-deprenyl or related compounds may be neuroprotective to dopamine neurons through its antiapoptotic activity.
83 citations
City College of New York1, Wake Forest University2, University of Florida3, University of Minnesota4, University of Vienna5, University of Szeged6, University of Coimbra7, Otto-von-Guericke University Magdeburg8, Tehran University of Medical Sciences9, Eindhoven University of Technology10, Centre for Addiction and Mental Health11, Université libre de Bruxelles12, Harvard University13, Copenhagen University Hospital14, University of New South Wales15, University College London16, Monash University17, Shahed University18, University of São Paulo19, University of Graz20, Max Planck Society21, Nagoya Institute of Technology22, University of Calgary23, Albert Einstein College of Medicine24, Research Medical Center25, Universidade Federal do Espírito Santo26, ETH Zurich27, Manipal University28, University of Zurich29, Beth Israel Deaconess Medical Center30, University of Oxford31, Technical University of Denmark32, Shanghai Mental Health Center33, University of Science and Technology of China34, McGovern Institute for Brain Research35
TL;DR: To facilitate the re-establishment of access to NIBS clinical services and research operations during the current COVID-19 pandemic and possible future outbreaks, a framework for balancing the importance of NIBS operations with safety considerations, while addressing the needs of all stakeholders is developed.
83 citations
TL;DR: In this paper, a recessed gate AlGaN/GaN modulation-doped field effect transistor (MODFET) has been grown on a sapphire substrate by metalorganic chemical vapor deposition.
Abstract: A recessed gate AlGaN/GaN modulation-doped field-effect transistor (MODFET) has been grown on a sapphire substrate by metalorganic chemical vapor deposition. The two-dimensional electron gas mobility as high as 9260 cm2/V s with the sheet carrier density 4.8×1012 cm−2 was measured at 4.6 K for the AlGaN/GaN heterostructure on the sapphire substrate. The recessed gate device showed the maximum extrinsic transconductance 146 mS/mm and drain-source current 900 mA/mm for the AlGaN/GaN MODFET with a gate length 2.1 μm at 25 °C. At an elevated temperature of 350 °C, the maximum extrinsic transconductance and drain-source current were 62 mS/mm and 347 mA/mm, respectively.
82 citations
TL;DR: These silicon-releasable microfiber meshes provide an excellent substrate for bone regeneration and exhibit enhanced bone-forming ability under both in vitro and in vivo conditions.
82 citations
Authors
Showing all 10804 results
| Name | H-index | Papers | Citations |
|---|---|---|---|
| Luis M. Liz-Marzán | 132 | 616 | 61684 |
| Hideo Hosono | 128 | 1549 | 100279 |
| Shunichi Fukuzumi | 111 | 1256 | 52764 |
| Andrzej Cichocki | 97 | 952 | 41471 |
| Kwok-Hung Chan | 91 | 406 | 44315 |
| Kimoon Kim | 90 | 412 | 35394 |
| Alex Martin | 88 | 406 | 36063 |
| Manijeh Razeghi | 82 | 1040 | 25574 |
| Yuichi Ikuhara | 75 | 974 | 24224 |
| Richard J. Cogdell | 73 | 480 | 23866 |
| Masaaki Tanaka | 71 | 860 | 22443 |
| Kiyotomi Kaneda | 65 | 378 | 13337 |
| Yulin Deng | 64 | 641 | 16148 |
| Motoo Shiro | 64 | 720 | 17786 |
| Norio Shibata | 63 | 574 | 14469 |