Institution
Nagoya Institute of Technology
Education•Nagoya, Japan•
About: Nagoya Institute of Technology is a education organization based out in Nagoya, Japan. It is known for research contribution in the topics: Thin film & Catalysis. The organization has 10766 authors who have published 19140 publications receiving 255696 citations. The organization is also known as: Nagoya Kōgyō Daigaku & Nitech.
Topics: Thin film, Catalysis, Dielectric, Enantioselective synthesis, Turbulence
Papers published on a yearly basis
Papers
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TL;DR: In this article, the authors tried to produce high critical current density (Jc) bulk superconducting material by a melt process and found that the grain boundary region acts as a weak-link and causes the low Jc of the sintered material.
Abstract: The authors tried to produce high critical current density (Jc) bulk superconducting material by a melt process. It became clear that the grain boundary region acts as a weak-link and causes the low Jc of the sintered material. It was found that highly oriented bulk material can be produced by a melt process in YBaCuO system. The authors obtained samples which contained many fine Y2BaCuO5 (211) phases and no grain boundary throughout a region of several tens of cubic millimeters. By magnetization measurements, it was found that Jc exceeded 104 A/cm2 at 77 K and 1 T, which is a promising value for practical applications.
73 citations
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TL;DR: In this paper, disorder-free many-body localization in the flat-band Creutz ladder was studied in cold-atoms in an optical lattice with and without interactions, and the level spacing analysis exhibits Poisson-like distribution indicating the existence of disorder free localization.
Abstract: We study disorder-free many-body localization in the flat-band Creutz ladder, which was recently realized in cold-atoms in an optical lattice. In a non-interacting case, the flat-band structure of the system leads to a Wannier wavefunction localized on four adjacent lattice sites. In the flat-band regime both with and without interactions, the level spacing analysis exhibits Poisson-like distribution indicating the existence of disorder-free localization. Calculations of the inverse participation ratio support this observation. Interestingly, this type of localization is robust to weak disorders, whereas for strong disorders, the system exhibits a crossover into the conventional disorder-induced many-body localizated phase. Physical picture of this crossover is investigated in detail. We also observe non-ergodic dynamics in the flat-band regime without disorder. The memory of an initial density wave pattern is preserved for long times.
73 citations
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TL;DR: A piecewise-linear path-following method for kernel-based quantile regression that enables us to estimate the cumulative distribution function of p(y x) in piece wise-linear form for all x in the input domain.
Abstract: The goal of regression analysis is to describe the stochastic relationship between an input vector x and a scalar output y. This can be achieved by estimating the entire conditional density p(y ∣ x). In this letter, we present a new approach for nonparametric conditional density estimation. We develop a piecewise-linear path-following method for kernel-based quantile regression. It enables us to estimate the cumulative distribution function of p(y ∣ x) in piecewise-linear form for all x in the input domain. Theoretical analyses and experimental results are presented to show the effectiveness of the approach.
73 citations
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73 citations
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TL;DR: In this paper, the fabrication and characterization of a GaAs-based laser using the epitaxial lateral overgrowth (ELO) technique has been reported, and two types of laser were fabricated by changing the positions of the top p+-GaAs and metal contact in line with the ELO layer and in-line with the line seed region.
Abstract: In this paper, we report on the fabrication and characterizations of a GaAs-based laser using the epitaxial lateral overgrowth (ELO) technique. ELO is an epitaxial growth technique capable of yielding low-dislocation-density III-V films on Si. To realize the effectivity of this procedure, two types of lasers were fabricated by changing the positions of the top p+-GaAs and metal contact in-line with the ELO layer and in-line with the line seed region. The longer lifetime for the lasers with the top p+-GaAs and metal contact in-line with the ELO layer proves the suitability of the ELO technique.
73 citations
Authors
Showing all 10804 results
Name | H-index | Papers | Citations |
---|---|---|---|
Luis M. Liz-Marzán | 132 | 616 | 61684 |
Hideo Hosono | 128 | 1549 | 100279 |
Shunichi Fukuzumi | 111 | 1256 | 52764 |
Andrzej Cichocki | 97 | 952 | 41471 |
Kwok-Hung Chan | 91 | 406 | 44315 |
Kimoon Kim | 90 | 412 | 35394 |
Alex Martin | 88 | 406 | 36063 |
Manijeh Razeghi | 82 | 1040 | 25574 |
Yuichi Ikuhara | 75 | 974 | 24224 |
Richard J. Cogdell | 73 | 480 | 23866 |
Masaaki Tanaka | 71 | 860 | 22443 |
Kiyotomi Kaneda | 65 | 378 | 13337 |
Yulin Deng | 64 | 641 | 16148 |
Motoo Shiro | 64 | 720 | 17786 |
Norio Shibata | 63 | 574 | 14469 |