Nagoya Institute of Technology

About: Nagoya Institute of Technology is a education organization based out in Nagoya, Japan. It is known for research contribution in the topics: Thin film & Catalysis. The organization has 10766 authors who have published 19140 publications receiving 255696 citations. The organization is also known as: Nagoya Kōgyō Daigaku & Nitech.

Shallow-junction formation on silicon by rapid thermal diffusion of impurities from a spin-on source

Abstract: Rapid thermal diffusion (RTD) of P and/or B into silicon wafer from spin-on sources using tungsten halogen lamps was successfully used to fabricate very shallow n/sup +/-p and/or p/sup +/-n junctions. RTD was performed in the temperature range of 600-1080 degrees C for 5-60 s, and the heating rates were varied in the range 10-83 degrees C/s. Effects of the two-step RTD, high temperature for several seconds, and subsequent low temperature for 60 s, were also examined. The RTD of P was carried out from P-doped oxide films and that of B was carried out from polymeric boron-doped films. Using RTD one can obtain a very shallow junction, thinner than 20 nm in depth. The impurity diffusion by RTD is similar to conventional furnace processing. However, the RTD of P and/for B was enhanced with the heating rate, especially at 83 degrees C/s. This was assumed to be caused by the stress field induced in the heating stage. The junction depth, I-V characteristics, spectral response, and cell parameters of fabricated photodiodes are presented. >

Hydrodynamic Fingering Instability Induced by a Precipitation Reaction

Abstract: We experimentally demonstrate that a precipitation reaction at the miscible interface between two reactive solutions can trigger a hydrodynamic instability due to the buildup of a locally adverse mobility gradient related to a decrease in permeability. The precipitate results from an A+Bâ†C type of reaction when a solution containing one of the reactants is injected into a solution of the other reactant in a porous medium or a Hele-Shaw cell. Fingerlike precipitation patterns are observed upon displacement, the properties of which depend on whether A displaces B or vice versa. A mathematical modeling of the underlying mobility profile confirms that the instability originates from a local decrease in mobility driven by the localized precipitation. Nonlinear simulations of the related reaction-diffusion-convection model reproduce the properties of the instability observed experimentally. In particular, the simulations suggest that differences in diffusivity between A and B may contribute to the asymmetric characteristics of the fingering precipitation patterns. © 2014 American Physical Society.

High Drain Current Density E-Mode ${\rm Al}_{2}{\rm O}_{3}$ /AlGaN/GaN MOS-HEMT on Si With Enhanced Power Device Figure-of-Merit $(4\times 10^{8}~{\rm V}^{2}\Omega^{-1}{\rm cm}^{-2})$

Abstract: In this paper, we report on the enhancement-mode (E-mode) Al2O3/AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors (MOS-HEMTs) on Si. The E-mode operation is due to the negative charges in the atomic layer deposited Al2O3 layer. The unrecessed E-mode MOS-HEMTs exhibit high drain current density with a low specific ON-state resistance (RON,sp) of 0.7 mΩ·cm2. A low gate leakage current showed enhancements in the subthreshold characteristics such as ION/IOFF ratio ~108 and subthreshold slope of 75 mV/decade. This E-mode device showed good retention characteristics of threshold voltage upto 105 s. Furthermore, the E-mode MOS-HEMT exhibits an OFF-state breakdown voltage of 532 V for short gate-to-drain distance (Lgd=4 μm) that records a high power device figure of merit (FOM=BV2/RON,sp) value of 4×108 V2Ω-1cm-2.

Oxidation of elemental sulfur by Fusarium solani strain THIF01 harboring endobacterium Bradyrhizobium sp.

Abstract: Nineteen fungal strains having an ability to oxidize elemental sulfur in mineral salts medium were isolated from deteriorated sandstones of Angkor monuments. These fungi formed clearing zone on agar medium supplemented with powder sulfur due to the dissolution of sulfur. Representative of the isolates, strain THIF01, was identified as Fusarium solani on the basis of morphological characteristics and phylogenetic analyses. PCR amplification targeting 16S rRNA gene and analyses of full 16S rRNA gene sequence indicated strain THIF01 harbors an endobacterium Bradyrhizobium sp.; however, involvement of the bacterium in the sulfur oxidation is still unclear. Strain THIF01 oxidized elemental sulfur to thiosulfate and then sulfate. Germination of the spores of strain THIF01 was observed in a liquid medium containing mineral salts supplemented with elemental sulfur (rate of germinated spores against total spores was 60.2%), and the culture pH decreased from pH 4.8 to 4.0. On the contrary, neither germination (rate of germinated spores against total spores was 1.0%) nor pH decrease was observed without the supplement of elemental sulfur. Strain THIF01 could also degrade 30 ppmv and ambient level (approximate 500 pptv) of carbonyl sulfide.

Simultaneous determination of in vivo hydroxylation of tyrosine and tryptophan in rat striatum by microdialysis-HPLC: relationship between dopamine and serotonin biosynthesis

Abstract: Using a microdialysis technique, the rat striatum was perfused with NSD-1015, an inhibitor of aromatic L-amino acid decarboxylase, and the amount of L-3,4-dihydroxyphenylalanine (L-DOPA) and 5-hydroxytrytophan (5-HTP) accumulating in dialysate was measured as an index of in vivo activities of tyrosine hydroxylase and tryptophan hydroxylase. NSD-1015 increased the concentration of L-DOPA much higher than that of 5-HTP in a dose-related manner (1–100 μmol/L). In order to examine the relationship between dopaminergic and serotonergic neurons in the striatum, either 5-HTP or L-DOPA was injected intraperitoneally to rats pretreated with benserazide, an inhibitor of peripheral decarboxylase. 5-HTP administration increased 5-HTP, but decreased L-DOPA in a dose-dependent manner. Conversely, 5-HTP concentration decreased in an association with the increased content of L-DOPA following L-DOPA administration. The decrease of 5-HTP caused by L-DOPA administration was not as remarkable as that of L-DOPA by 5-HTP injection. These results suggest that L-DOPA and 5-HTP, the precursor amino acids for catecholamines and indoleamines, could affect mutually each other neuronal activity through the inhibition of their rate-limiting enzymes.