Nagoya Institute of Technology

About: Nagoya Institute of Technology is a education organization based out in Nagoya, Japan. It is known for research contribution in the topics: Thin film & Turbulence. The organization has 10766 authors who have published 19140 publications receiving 255696 citations. The organization is also known as: Nagoya Kōgyō Daigaku & Nitech.

Enantioselective Reactions of Configurationally Unstable α‐Thiobenzyllithium Compounds

Abstract: Trotz ihrer Konfigurationslabilitat, die sie fur eine asymmetrische Deprotonierung ungeeignet macht, konnen α-Sulfenylcarbanionen enantioselektive Substitutionsreaktionen mit hoher Stereoselektivitat eingehen [Gl. (1)]. Der Schlussel zur erfolgreichen asymmetrischen Induktion ist die dynamische kinetische Racematspaltung des Komplexes aus der Organolithiumverbindung und einem chiralen Liganden, vorzugsweise einem Bisoxazolinderivat.

Synthesis of Ag–In binary sulfide nanoparticles—structural tuning and their photoluminescence properties

Abstract: In this report, we demonstrate the synthesis of binary sulfide Ag–In–S NPs using a Ag–In thiolate complex. Thermal decomposition of the thiolate complex provides Ag/AgInS2 heterostructured nanoparticles (NPs). A metathesis reaction between the thiolate complex and sulfur source leads to the formation of nearly monodispersed AgInS2 NPs with a chalcopyrite-like or orthorhombic structure. AgInS2 NPs with a chalcopyrite-like structure exhibited room temperature photoluminescence (PL). Spectral shift of the PL band depending on the excitation laser intensity and characteristic behavior of the PL decay time varying over a wide energy range within the PL band were observed. These results indicate that the PL of the AgInS2 NPs may be attributed to the donor–acceptor (D–A) pair recombination.

Buffer Thickness Contribution to Suppress Vertical Leakage Current With High Breakdown Field (2.3 MV/cm) for GaN on Si

Abstract: Vertical breakdown studies on AlGaN/GaN high-electron-mobility transistors (HEMTs) grown by metal-organic chemical vapor deposition (MOCVD) on a silicon substrate are studied to analyze the breakdown dependence with regard to i-GaN thickness (TGaN) and buffer thickness (TBuf). A high breakdown field (Ec) of 2.3 MV/cm was observed for MOCVD grown epilayers of total thickness of 5.5 μm on Si. Increasing TBuf is more significant than TGaN toward controlling the vertical leak age and demonstrates a high breakdown. For transistor operation at high voltages, GaN layers grown on thick buffers are highly resistive to the flow of leakage currents. A high figure of merit (BV2/Rd.ON) of 5.4 × 108 V2 · Ω-1· cm-2 was observed for an AlGaN/GaN HEMT grown on Si using a thick buffer.