Nagoya Institute of Technology

About: Nagoya Institute of Technology is a education organization based out in Nagoya, Japan. It is known for research contribution in the topics: Thin film & Turbulence. The organization has 10766 authors who have published 19140 publications receiving 255696 citations. The organization is also known as: Nagoya Kōgyō Daigaku & Nitech.

Theory of Image Impedance Matching for Inductively Coupled Power Transfer Systems

Abstract: The optimum design of an inductively coupled power transfer system is accomplished by applying the Roberts's theory on conjugate image impedance. The input and output ports' impedance and the loading capacitances for maximum power transfer are obtained as functions of the self-inductances, the mutual inductance, the copper losses, and the iron loss, which are used to define the figure-of-merit of the system. It is found that the loading capacitances necessarily satisfy the resonance conditions individually in the input and output circuits. The capacitors may be connected in series or in parallel. The equivalent transform formulas between the series and parallel topologies are given for the capacitances and for the port impedances. The port impedance in the series (parallel) topology is proportional (approximately inversely proportional) to the inductive coupling coefficient. The image impedances of the lossless symmetric systems are real or pure imaginary depending on the frequency, and the image impedance patterns are classified as “Hill”, “Valley”, and “Waterfall". The reactance network approach for such lossless systems gives in-depth insight into the system behaviors and facilitates the practical design.

A comparison of control charts from the viewpoint of change‐point estimation

Abstract: ISO/DIS 7870 has presented the cumulative sum chart, the moving average chart, and the exponentially weighted moving average chart as control charts using accumulated data. In this paper, we compare the three control charts in terms of change-point estimation. We show the probability distribution, the bias and the mean square error of the change-point estimators using a Markov process and Monte Carlo simulation. These control charts have almost equivalent performances based on average run length considerations when parameters of each control chart are set appropriately. However, from the viewpoint of change-point estimation we recommend the CUSUM chart.

Improved Characteristics of Blue and Green InGaN-Based Light-Emitting Diodes on Si Grown by Metalorganic Chemical Vapor Deposition.

Abstract: We report significantly improved characteristics of InGaN multiple-quantum well blue and green light-emitting diodes (LEDs) on Si (111) substrates using metalorganic chemical vapor deposition. A high-temperature-grown thin AlN layer and AlN/GaN multilayers have been used for the growth of high-quality active layer on Si substrate. The blue LED on Si exhibited an operating voltage of 4.1 V, a series resistance of 30 Ω, an optical output power of 18 µW and a peak emission wavelength of 478 nm with a full width at half maximum of 22 nm at 20 mA drive current. These characteristics are comparable to those of LED on sapphire substrate. The green LED was also fabricated on Si substrate successfully.