Nankai University

About: Nankai University is a education organization based out in Tianjin, China. It is known for research contribution in the topics: Catalysis & Enantioselective synthesis. The organization has 42964 authors who have published 51866 publications receiving 1127896 citations. The organization is also known as: Nánkāi Dàxué.

Porphyrin and Fullerene Covalently Functionalized Graphene Hybrid Materials with Large Nonlinear Optical Properties

Abstract: The nonlinear optical properties of two novel graphene nanohybrid materials covalently functionalized with porphyrin and fullerene were investigated by using the Z-scan technique at 532 nm in the nanosecond and picosecond time scale. Results show that covalently functionalizing graphene with the reverse saturable absorption chromospheres porphyrin and fullerene can enhance the nonlinear optical performance in the nanosecond regime. The covalently linked graphene nanohybrids offer performance superior to that of the individual graphene, porphyrin, and fullerene by combination of a nonlinear mechanism and the photoinduced electron or energy transfer between porphyrin or fullerene moiety and graphene.

Small-Molecule Acceptor Based on the Heptacyclic Benzodi(cyclopentadithiophene) Unit for Highly Efficient Nonfullerene Organic Solar Cells

Abstract: A new nonfullerene small molecule with acceptor–donor–acceptor (A–D–A) structure, namely, NFBDT, based on a heptacyclic benzodi(cyclopentadithiophene) (FBDT) unit using benzo[1,2-b:4,5-b′]dithiophene as the core unit, was designed and synthesized. Its absorption ability, energy levels, thermal stability, as well as photovoltaic performances were fully investigated. NFBDT exhibits a low optical bandgap of 1.56 eV resulting in wide and efficient absorption that covered the range from 600 to 800 nm, and suitable energy levels as an electron acceptor. With the widely used and successful wide bandgap polymer PBDB-T selected as the electron donor material, an optimized PCE of 10.42% was obtained for the PBDB-T:NFBDT-based device with an outstanding short-circuit current density of 17.85 mA cm–2 under AM 1.5G irradiation (100 mW cm–2), which is so far among the highest performance of NF-OSC devices. These results demonstrate that the BDT unit could also be applied for designing NF-acceptors, and the fused-ring b...