Narula Institute of Technology

About: Narula Institute of Technology is a based out in . It is known for research contribution in the topics: Quantum dot cellular automaton & Cognitive radio. The organization has 288 authors who have published 490 publications receiving 2258 citations. The organization is also known as: NiT.

Design of probe feed patch antenna with different dielectric constants

Abstract: An edge slotted rectangular probe-fed patch antenna is studied by changing only the dielectric constants of the material such as polyethylene, silicon dioxide, silicon, Teflon etc. for investigating various aspect of the microstrip antenna. Four rectangular slots have been introduced with the patch for optimizing the antenna geometry. This analysis shows the effects of various dielectric materials with fixed antenna geometry. The antenna analysis have been observed and compared by plotting the observation of different dielectric constants from 2 to 12. The main motto of the analysis is to provide improved transmission with wider bandwidth.

Satellite lines of helium-like ions in strongly coupled plasma environment

Abstract: We report the transition energies and probabilities of satellite lines due to 2 p 2 ( 3 P 0 , 1 , 2 ) → 1 s 2 p ( 3 P 0 , 1 , 2 ) transitions of He-like C , N e , A l and A r ions embedded in strongly coupled plasma (SCP) environment. The SCP environment is represented by the ion-sphere (IS) model and the IS radius is varied in such a way that plasma electron densities ( ∼ 10 20 − 10 26 per c m 3 ) cover a wide range of experimental interest. Both relativistic and non-relativistic energies of 2 p 2 ( 3 P ) and 1 s 2 p ( 3 P ) states are reported. The relativistic MCDF results are obtained by modified GRASP2K code and the non-relativistic variational results are done by using explicitly correlated Hylleraas basis. The relativistic results are in good agreement with experimental data available in literature. The positions of intercombination lines in presence of dense plasma can be calculated from present results which are comparable with experimental measurements. The partial pressures experienced by the plasma-embedded ions are analyzed in the purview of available experimental observations. An empirical relation is reported to estimate partial pressure on ions in dense plasma environment.

Design and power analysis of 4 × 4 semiconductor ROM array with row decoder and column decoder at 32, 22 and 16 nm channel length of MOS transistor

Abstract: In this work, the design and power consumption analysis of NOR based 4 × 4 semiconductor read-only-memory (ROM) array has been presented. In this study, row decoder and column decoder has been considered in order to retrieve the data from ROM array. All the circuits are designed using nanodimensional metal oxide semiconductor (MOS) transistor. The average power consumption across the ROM array structure has been reported for the MOS transistors with channel length of 32, 22 and 16 nm. Selecting the row lines and column lines using row decoder and column decoder, data written inside the ROM array has been retrieved. In order to verify the data inside the ROM array, simulated waveforms are presented. Overall design and power consumption analysis of the ROM array in nano regime has been analyzed with the help of Tanner SPICE (T-SPICE) tools. It is seen that as power supply voltage VDD increases the average power consumption across the ROM structure also increases. This indicates that for low power design the value of VDD needs to be downscaled. Comparison of the average power consumption for MOS transistors having channel length 32, 22 and 16 nm has been reported.

Hardware Implementation of Image Dehazing Mechanism using Verilog HDL and Parallel DCP

Abstract: In image processing technology, one of the prime applications is the dehazing process. And it is still a challenge in implementing the corresponding algorithm in hardware. In this paper we propose an atmospheric light estimation method without any complex logic. This makes easy implementation on hardware level. We have also used the Independent Transmission Rate Estimation (ITRE) for calculation of transmission coefficient parallel to the calculation of the atmospheric light. This procedure enhances the time complexity and the quality of the dehazed image. Compared to other logic studies this logic shows a competitive response.

Comparative Study of IV-Characteristics of PIN Diode at Different Doping Concentrations for Different Semiconductor Materials Using TCAD

Abstract: For the purpose of designing and selection the optimal device for a particular application, device and circuit engineers has to analyze the between competing devices. This article presents a comparative study of current voltage characteristics for PIN diodes. Three different sets of doping concentrations are studied for each of the five different material PiN diodes. The PiN diode is simulated using V-TCAD software. For the same diode structure effects of different doping on different materials are studied and VI characteristics are plotted based on simulated results. The change in doping concentration resulted in almost negligible change in threshold voltage. Whereas large increase in current is obtained for increase in doping concentrations.