Narula Institute of Technology

About: Narula Institute of Technology is a based out in . It is known for research contribution in the topics: Quantum dot cellular automaton & Cognitive radio. The organization has 288 authors who have published 490 publications receiving 2258 citations. The organization is also known as: NiT.

Thermal Modeling of III-V WBG-Based p-i-n Switch

Abstract: Breakdown voltage and power dissipation of a semiconductor device determine the range of voltage, frequency and temperature over which it can operate keeping in track its electrical and optical characteristics. The power dissipation of p-i-n diode has been studied using thermal modelling with heat sink. The electrical properties of the switch are determined by its internal resistance and depend on geometrical structure of the device. This type of switch can control the high power from k u band through millimetre wave frequency in the verity of switch configuration such as single-pole single-throw switch (SPST), single-pole double-throw switch (SPDT) and single-pole multi-throw switch (SPMT). It offers high breakdown voltage for which it enables to operate at high temperature and becomes capable to handle the high power.

Cost Optimization Technique for Quantum Circuits

Abstract: In this paper, an attempt is made to present a method of quantum cost minimization or optimization technique for quantum reversible circuits using proposed merger rules in Exclusive Sum of Product (ESOP) method. These modified ESOP methods are used to minimize the quantum circuits. We found that the quantum cost is drastically decreased than the previous ESOP method. It will be easy to find the quantum cost and quantum gate optimized quantum circuits implementation. It will also reduce quantum error while the quantum circuit is executed in real quantum processor.

Binary expansion based denoising algorithm for an image corrupted by Gaussian noise

Abstract: Efficient filtering technique on removal of Gaussian noise is not an easy task. In this paper two same centered different size windows are taken for every pixel of the noisy image. A variable threshold value (Γ) has been calculated with the help of standard deviation (σ) of the pixels in the big window. The pixels of the big window are distributed in four sets to determine the conditional mean. Finally an eight bit binary table is created for decision and restoration. Results of the computer simulations demonstrate the effectiveness of the proposed method taking different test images at variable noise densities.

Search of appropriate semiconductor for PIN Diode fabrication in terms of resistance analysis

Abstract: The PIN diode is a promising device in the field of power electronics due to its lower reverse leakage current and lower capacitance. Power electronics industry searches suitable semiconductors as conventional silicon saturates in context of impedance performances with a specified device configuration in the analysis of PIN diode. This paper considers the different materials like Si, Ge, GaAs, SiC-3C, SiC-4H, SiC-6H, GaN-wZ, GaN-zB, InAs to study the variation of intrinsic resistance, junction resistance and total resistance with respect to forward current as well as to study these same parameters with respect to width of the intrinsic region. The characteristics of intrinsic, junction and total resistances of PIN diodes with 10mA forward bias current and 50 micron width of the intrinsic region are noted. Finally it concludes and proposes the superior semiconductor material for PIN diode.