National Institute of Advanced Industrial Science and Technology

About: National Institute of Advanced Industrial Science and Technology is a government organization based out in Tsukuba, Ibaraki, Japan. It is known for research contribution in the topics: Catalysis & Thin film. The organization has 22114 authors who have published 65856 publications receiving 1669827 citations. The organization is also known as: Sangyō Gijutsu Sōgō Kenkyū-sho.

Development of the Tactile Sensor System of a Human-Interactive Robot “RI-MAN”

Abstract: Human-interactive robots, such as those used for nursing, which share humans' environments and interact with them, should be covered with soft areal tactile sensors for safety and dexterous manipulation We report the successful development of the tactile sensor system of our human-interactive robot named RI-MAN, which can lift up a dummy human

Quantitative and Statistical Performance Evaluation of Arbiter Physical Unclonable Functions on FPGAs

Abstract: The quantitative performance indicators of Physical Unclonable Functions (PUFs)\Randomness, Steadiness, Correctness, Diffuseness and Uniqueness\are strictly defined and applied to the evaluation of 45 arbiter PUFs on Virtex-5 FPGAs. The indicators effectively reflect the characteristics of PUFs ranging from 0 to 1 with 1 being the highest performance. The indicators enable the easy measurement and intuitive understanding of PUF performances. The experimental results shows that the arbiter PUFs have excellent overall intra-device performances though a slight bit bias is indicated. The inter-device performance is moderate and will suffice for the practical use of PUFs for device authentication and so on. Additionally, the reliability of the obtained PUF performances is statistically discussed in terms of the Confidence Interval and the number of devices. This paper presents in detail the definitions of the performance indicators and the quantitative and statistical evaluation results of the arbiter PUFs.

Involvement of free radicals and oxidative stress in NAFLD/NASH

Abstract: Non-alcoholic fatty liver disease (NAFLD) is now the most common liver disease affecting high proportion of the population worldwide. NAFLD encompasses a large spectrum of conditions ranging from fatty liver to non-alcoholic steatohepatitis (NASH), which can progress to cirrhosis and cancer. NAFLD is considered as a multifactorial disease in relation to the pathogenic mechanisms. Oxidative stress has been implicated in the pathogenesis of NAFLD and NASH and the involvement of reactive oxygen species (ROS) has been suggested. Many studies show the association between the levels of lipid oxidation products and disease state. However, often neither oxidative stress nor ROS has been characterized, despite oxidative stress is mediated by multiple active species by different mechanisms and the same lipid oxidation products are produced by different active species. Further, the effects of various antioxidants have been assessed in human and animal studies, but the effects of drugs are determined by the type of active species, suggesting the importance of characterizing the active species involved. This review article is focused on the role of free radicals and free radical-mediated lipid peroxidation in the pathogenesis of NAFLD and NASH, taking characteristic features of free radical-mediated oxidation into consideration. The detailed analysis of lipid oxidation products shows the involvement of free radicals in the pathogenesis of NAFLD and NASH. Potential beneficial effects of antioxidants such as vitamin E are discussed.

Tin-Vacancy Quantum Emitters in Diamond.

Abstract: Tin-vacancy ($\mathrm{Sn}\text{\ensuremath{-}}V$) color centers were created in diamond via ion implantation and subsequent high-temperature annealing up to $2100\text{ }\ifmmode^\circ\else\textdegree\fi{}\mathrm{C}$ at 7.7 GPa. The first-principles calculation suggested that a large atom of tin can be incorporated into a diamond lattice with a split-vacancy configuration, in which a tin atom sits on an interstitial site with two neighboring vacancies. The $\mathrm{Sn}\text{\ensuremath{-}}V$ center showed a sharp zero phonon line at 619 nm at room temperature. This line split into four peaks at cryogenic temperatures, with a larger ground state splitting ($\ensuremath{\sim}850\text{ }\text{ }\mathrm{GHz}$) than that of color centers based on other group-IV elements, i.e., silicon-vacancy ($\mathrm{Si}\text{\ensuremath{-}}V$) and germanium-vacancy ($\mathrm{Ge}\text{\ensuremath{-}}V$) centers. The excited state lifetime was estimated, via Hanbury Brown--Twiss interferometry measurements on single $\mathrm{Sn}\text{\ensuremath{-}}V$ quantum emitters, to be $\ensuremath{\sim}5\text{ }\text{ }\mathrm{ns}$. The order of the experimentally obtained optical transition energies, compared with those of $\mathrm{Si}\text{\ensuremath{-}}V$ and $\mathrm{Ge}\text{\ensuremath{-}}V$ centers, was in good agreement with the theoretical calculations.