National Institute of Advanced Industrial Science and Technology

About: National Institute of Advanced Industrial Science and Technology is a government organization based out in Tsukuba, Ibaraki, Japan. It is known for research contribution in the topics: Catalysis & Thin film. The organization has 22114 authors who have published 65856 publications receiving 1669827 citations. The organization is also known as: Sangyō Gijutsu Sōgō Kenkyū-sho.

Wolbachia as a bacteriocyte-associated nutritional mutualist

Abstract: Many insects are dependent on bacterial symbionts that provide essential nutrients (ex. aphid–Buchnera and tsetse–Wiglesworthia associations), wherein the symbionts are harbored in specific cells called bacteriocytes that constitute a symbiotic organ bacteriome. Facultative and parasitic bacterial symbionts like Wolbachia have been regarded as evolutionarily distinct from such obligate nutritional mutualists. However, we discovered that, in the bedbug Cimex lectularius, Wolbachia resides in a bacteriome and appears to be an obligate nutritional mutualist. Two bacterial symbionts, a Wolbachia strain and an unnamed γ-proteobacterium, were identified from different strains of the bedbug. The Wolbachia symbiont was detected from all of the insects examined whereas the γ-proteobacterium was found in a part of them. The Wolbachia symbiont was specifically localized in the bacteriomes and vertically transmitted via the somatic stem cell niche of germalia to oocytes, infecting the incipient symbiotic organ at an early stage of the embryogenesis. Elimination of the Wolbachia symbiont resulted in retarded growth and sterility of the host insect. These deficiencies were rescued by oral supplementation of B vitamins, confirming the essential nutritional role of the symbiont for the host. The estimated genome size of the Wolbachia symbiont was around 1.3 Mb, which was almost equivalent to the genome sizes of parasitic Wolbachia strains of other insects. These results indicate that bacteriocyte-associated nutritional mutualism can evolve from facultative and prevalent microbial associates like Wolbachia, highlighting a previously unknown aspect of the parasitism-mutualism evolutionary continuum.

Collective bulk carrier delocalization driven by electrostatic surface charge accumulation

Abstract: In the classic transistor, the number of electric charge carriers--and thus the electrical conductivity--is precisely controlled by external voltage, providing electrical switching capability. This simple but powerful feature is essential for information processing technology, and also provides a platform for fundamental physics research. As the number of charges essentially determines the electronic phase of a condensed-matter system, transistor operation enables reversible and isothermal changes in the system's state, as successfully demonstrated in electric-field-induced ferromagnetism and superconductivity. However, this effect of the electric field is limited to a channel thickness of nanometres or less, owing to the presence of Thomas-Fermi screening. Here we show that this conventional picture does not apply to a class of materials characterized by inherent collective interactions between electrons and the crystal lattice. We prepared metal-insulator-semiconductor field-effect transistors based on vanadium dioxide--a strongly correlated material with a thermally driven, first-order metal-insulator transition well above room temperature--and found that electrostatic charging at a surface drives all the previously localized charge carriers in the bulk material into motion, leading to the emergence of a three-dimensional metallic ground state. This non-local switching of the electronic state is achieved by applying a voltage of only about one volt. In a voltage-sweep measurement, the first-order nature of the metal-insulator transition provides a non-volatile memory effect, which is operable at room temperature. Our results demonstrate a conceptually new field-effect device, extending the concept of electric-field control to macroscopic phase control.

Biomass gasification in near- and super-critical water: Status and prospects

Abstract: The current status of biomass gasification in near- and supercritical water (SCWG) is reviewed. There are two approaches to biomass gasification in supercritical water. The first: low-temperature catalytic gasification, employs reaction temperature ranging from 350 to 600 °C, and gasifies the feedstock with the aid of metal catalysts. The second: high-temperature supercritical water gasification, employs reaction temperatures ranging from 500 to 750 °C, without catalyst or with non-metallic catalysts. Reviews are made on reaction mechanism, catalyst, and experimental results for these two approaches. Engineering technologies for SCWG gasification, and an example of process analysis are also introduced. Finally, the authors’ prognostications on the future prospects of this technology are offered.

Enhancement of Piezoelectric Response in Scandium Aluminum Nitride Alloy Thin Films Prepared by Dual Reactive Cosputtering

Abstract: Adv. Mater. 2009, 21, 593–596 2009 WILEY-VCH Verlag Gm The industrial demand for higher-temperature piezoelectric sensors is drastically increasing, for the control of automobile, aircraft, and turbine engines and the monitoring of furnace and reactor systems, because environmental problems, such as carbon dioxide (CO2) and nitrogen oxide (NOx) reduction, are becoming more globally serious. The sensors are also desirable for health monitoring coal-fired electric-generation plants and nuclear plants. It is generally known that piezoelectric materials with a higher Curie temperature possess a lower piezoelectric coefficient. Furthermore, the results of a study (Fig. 1) of the relationship between maximum use temperature and piezoelectric coefficient d33 shows that the piezoelectric materials with a higher maximum use temperature possess a lower piezoelectric coefficient d33. [3–9] For example, the Curie temperature and piezoelectric coefficient d33 of lead zirconium titanate (PZT), which is widely used in many electronic devices, are 250 8C and 410 pCN , respectively. The maximum use temperature and d33 of aluminum nitride (AlN), which is a typical hightemperature piezoelectric material, are 1150 8C and 5.5 pCN . It is difficult to achieve a good balance between high maximum use temperature and large piezoelectricity in a material, and no effective piezoelectric materials with these characteristics have yet been found. In this communication, we report a hightemperature piezoelectric material that exhibits a good balance between high maximum use temperature and large piezoelectricity. This was achieved by the combination of the discovery of a phase transition in scandium aluminum nitride (ScxAl1 xN) alloy thin films and the use of dual co-sputtering, which leads to nonequilibrium alloy thin films. Sc0.43Al0.57N alloys exhibit a large piezoelectric coefficient d33 of 27.6 pCN , which is at least 500% larger than AlN. The large piezoelectric coefficient d33 is the highest piezoelectric response among the tetrahedrally bonded semiconductors, despite the fact that the crystal structure of scandium nitride (ScN) is rock-salt (nonpolar). Moreover, the large piezoelectricity is not changed by annealing at 500 8C for 56 h under vacuum. This work demonstrates the new route to design of this high-temperature piezoelectric material. ScN has a rock-salt structure (nonpolar). However, Takeuchi reported the existence of a (meta)stable wurtzite structure in ScN, and the possible fabrication of Sc-IIIA-N nitrides by firstprinciples calculations. Farrer et al. predicted that the wurtzite structure is unstable in ScN, and that the hexagonal structure is (meta)stable in ScN, unlike the wurtzite structure. The piezoelectric responses of hexagonal ScxGa1 xN and ScxIn1 xN alloys can be enhanced by an isostructural phase transition (from wurtzite to layered hexagonal). However, the piezoelectric responses and Curie temperatures of the nitride alloys have not yet been confirmed by experiments. AlN, GaN, and InN are IIIA nitrides and have a wurtzite structure (polar). In particular, the thermal stability and piezoelectricity of AlN are the highest among the IIIA nitrides. AlN is a piezoelectric material compatible with the Complementary metal–oxide– semiconductor (CMOS) manufacturing process, and is a promising material for integrated sensors/actuators on silicon substrates. Wurtzite and rocksalt structures have rather different lattice forms and unit sizes. The formation of