National Institute of Technology Goa

About: National Institute of Technology Goa is a based out in . It is known for research contribution in the topics: Wireless sensor network & Photovoltaic system. The organization has 387 authors who have published 627 publications receiving 3703 citations.

State-of-the-art review on deep learning in medical imaging.

Abstract: Deep learning (DL) is affecting each and every sphere of public and private lives and becoming a tool for daily use. The power of DL lies in the fact that it tries to imitate the activities of neurons in the neocortex of human brain where the thought process takes place. Therefore, like the brain, it tries to learn and recognize patterns in the form of digital images. This power is built on the depth of many layers of computing neurons backed by high power processors and graphics processing units (GPUs) easily available today. In the current scenario, we have provided detailed survey of various types of DL systems available today, and specifically, we have concentrated our efforts on current applications of DL in medical imaging. We have also focused our efforts on explaining the readers the rapid transition of technology from machine learning to DL and have tried our best in reasoning this paradigm shift. Further, a detailed analysis of complexities involved in this shift and possible benefits accrued by the users and developers.

Performance Enhancement of Novel InAs/Si Hetero Double-Gate Tunnel FET Using Gaussian Doping

Abstract: In this paper, for the first time, an InAs/Si heterojunction double-gate tunnel FET (H-DGTFET) has been analyzed for low-power high-frequency applications. For this purpose, the suitability of the device for low-power applications is investigated by extracting the threshold voltage of the device using a transconductance change method and a constant current method. Furthermore, the effects of uniform and Gaussian drain doping profile on dc characteristics and analog/RF performances are investigated for different channel lengths. A highly doped layer is placed in the channel near the source–channel junction, and this decreases the width of the depletion region, which improves the ON-current ( ${I_{\rm{\scriptscriptstyle ON}}}$ ) and the RF performance. Furthermore, the circuit-level performance assessment is done by implementing a common source amplifier using the H-DGTFET; a 3-dB roll-off frequency of 230.11 GHz and a unity-gain frequency of 5.4 THz were achieved.