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Institution

National Institute of Technology, Silchar

EducationSilchar, Assam, India
About: National Institute of Technology, Silchar is a education organization based out in Silchar, Assam, India. It is known for research contribution in the topics: Control theory & Electric power system. The organization has 1934 authors who have published 4219 publications receiving 41149 citations. The organization is also known as: NIT Silchar.


Papers
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Journal ArticleDOI
TL;DR: A new lightweight encryption method called LRBC has been proposed in this work for resource constraint IoT devices which can provide data security at the sensing level and ensures high security against various attacks with robustness.
Abstract: The internet of things (IoT) is now an in-demand technology that has been adopted in various applications and includes various embedded devices, sensors and other objects connected to the Internet. Due to the rapid development of this technology, it covers a significant portion of the research interests nowadays. IoT devices are typically designed for collecting different types of data from various sources and transmitting them in digitized form. However, data security is the burning issue in the IoT technology, which can broadly impact the privacy of crucial data. In this regard, a new lightweight encryption method called LRBC has been proposed in this work for resource constraint IoT devices which can provide data security at the sensing level. The LRBC has used the structural advantages of both substitution–permutation network (SPN) and Feistel structure together to achieve better security. Furthermore, the proposed method has been tested on NEXYS 4 DDR FPGA (Artix-7) trainer kit and implemented for application specific integrated circuit (ASIC) chip on TSMC 65 nm technology. The proposed algorithm consumes very less power of 11.40 μW and occupies a 258.9 GE (Gate Equivalent) area. Besides, a thorough security analysis shows that the proposed scheme ensures high security against various attacks with robustness. Moreover, the average avalanche effect of LRBC is found to be 58% and 55.75% concerning plaintext and key, respectively.

29 citations

Journal ArticleDOI
TL;DR: The proposed 3-D chaotic system is relatively more chaotic (based on the first Lyapunov exponent) and has larger bandwidth than 50 available chaotic systems and is better than a well-known Lorenz chaotic system for this application.
Abstract: This paper attempts to construct a new 3-D chaotic system which is easily hardware realisable and fulfil the requirement of a real-life application. The proposed system is relatively more chaotic (based on the first Lyapunov exponent) and has larger bandwidth than 50 available chaotic systems. Lyapunov spectrum and bifurcation diagram of the system reveal that it has chaotic behaviour for a wider range of its parameters. Such characteristic is helpful for an easy hardware realisation of the system. It is to be noted that the reported systems with hidden attractors are not considered here for the comparison. The proposed system has more complexity and disorder due to several unique properties like asymmetry to principle coordinates, dissimilar and asymmetrical equilibria, and non-uniform contraction and expansion of volume in phase space. The proposed system also exhibits asymmetric pairs of coexisting attractors during its operation in two modes. The new system has different routes to chaos including crisis, an inverse crisis, period-doubling and reverse period-doubling routes to chaos with the variation of parameters. MATLAB simulation results confirm the claims, and the results of hardware circuit realisation validate the simulation results. An application of the new system is shown by masking and retrieving an information signal. It is also shown that the proposed system is better than a well-known Lorenz chaotic system for this application. A system with the above unique properties is rare in the literature.

29 citations

Journal ArticleDOI
TL;DR: In this article, the level of exfoliation of low cost aggregated graphitic nanoplatelets (GNPs) through a facile oxidation method and their amine functionalization to use as reinforcement in hybrid carbon fiber reinforced polymer (CFRP) composite with improved interfacial properties was demonstrated.
Abstract: Effective functionalization of graphitic nano-fillers for better exfoliation and interfacial interaction with epoxy matrix is highly desirable for fabrication of high-performance laminated composites. This paper demonstrates the level of exfoliation of low cost aggregated graphitic nanoplatelets (GNPs) through a facile oxidation method and their amine functionalization to use as reinforcement in hybrid carbon fiber reinforced polymer (CFRP) composite with improved interfacial properties. The morphologies, surface functional groups, surface topography, surface elements, structural information of amine functionalized GNPs were characterized by FESEM, FT-IR, AFM, XPS, Raman analysis respectively. The hybrid CFRPs reinforced with 60 h of oxidized followed by silanized GNPs (OSG-60) demonstrated significant improvement in tensile strength (∼97%), flexural strength (∼62.3%) and interlaminar shear strength (∼27.42%) with respect to the control. Topographic investigation of OSG-60 demonstrates exfoliation of graphene sheets up to ∼2 to 3 layers along with uniformly decorated amine based silane moieties after silanization. Assessing the interfacial nanomechanical properties of hybrid CFRP having OSG-60 through nanoindentation, we found ∼33.41% enhancement in interfacial stiffness at the juncture of the fibers within the inter-ply region. Thus, this work provides a clear insight of an industrial ready method for delivering a durable and high-performance hybrid CFRP composites.

29 citations

Journal ArticleDOI
TL;DR: The proposed algorithm extracts rules from trained neural network for datasets with mixed mode attributes using pedagogical approach to convert the black box nature of Artificial Neural Network into a white box.
Abstract: Data Mining is a powerful technology to help organization to concentrate on most important data by extracting useful information from large database. One of the most commonly used techniques in data mining is Artificial Neural Network due to its high performance in many application domains. Despite many advantages of Artificial Neural Network, one of its main drawbacks is its inherent black box nature which is the main problem of using Artificial Neural Network in data mining. Therefore, this paper proposes a rule extraction algorithm from neural network using classified and misclassified data to convert the black box nature of Artificial Neural Network into a white box. The proposed algorithm is a modification of the existing algorithm, Rule Extraction by Reverse Engineering (RxREN). The proposed algorithm extracts rules from trained neural network for datasets with mixed mode attributes using pedagogical approach. The proposed algorithm uses both classified as well as misclassified data to find out the ...

29 citations

Proceedings ArticleDOI
06 Mar 2014
TL;DR: In this article, the effect of channel length variation and temperature on threshold voltage of both CNTFET and MOSFET devices was analyzed and the results showed that the threshold voltage increases with decreasing channel length.
Abstract: In this paper we compare and justify the advantage of CNTFET devices over MOSFET devices in nanometer regime. Thereafter we have analyzed the effect of chiral vector, and temperature on threshold voltage of CNTFET device. After simulation on HSPICE tool we observed that the high threshold voltage can be achieved at low chiral vector pair. It is also observed that the effect of temperature on threshold voltage of CNTFET is negligibly small. After analysis of channel length variation and their impact on threshold voltage of CNTFET as well as MOSFET devices, we found an anomalous result that the threshold voltage increases with decreasing channel length in CNTFET devices, this is quite contrary to the well known short channel effect. It is observed that at below 10 nm channel length the threshold voltage is increased rapidly in case of CNTFET device whereas in case of MOSFET device the threshold voltage decreases drastically below 10 nm channel length.

29 citations


Authors

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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
202335
2022149
2021947
2020742
2019596
2018451