National Institute of Technology, Silchar

About: National Institute of Technology, Silchar is a education organization based out in Silchar, Assam, India. It is known for research contribution in the topics: Control theory & Electric power system. The organization has 1934 authors who have published 4219 publications receiving 41149 citations. The organization is also known as: NIT Silchar.

3D analytical modeling of surface potential, threshold voltage, and subthreshold swing in dual-material-gate (DMG) SOI FinFETs

Abstract: Here, we develop a 3D analytical model for potential in a lightly doped dual-material-gate FinFET in the subthreshold region. The model is based on the perimeter-weighted sum of a dual-material double-gate (DMDG) asymmetric MOSFET and a DMDG symmetric MOSFET. The potential model is used to determine the minimum surface potential needed to obtain the threshold voltage $$(V_{\mathrm{T}})$$(VT) and subthreshold swing (SS) by considering the source barrier changes in the leakiest channel path. The proposed model is capable of reducing the drain-induced barrier lowering (DIBL) as well as the hot carrier effects offered by this device. The impact of control gate ratio and work function difference between the two metal gates on $$V_{\mathrm{T}}$$VT and SS are also correctly established by the model. All model derivations are validated by comparing the results with technology computer-aided design (TCAD) simulation data.

Estimation of flood frequency using statistical method: Mahanadi River basin, India

Abstract: Estimating stream flow has a substantial financial influence, because this can be of assistance in water resources management and provides safety from scarcity of water and conceivable flood destruction. Four common statistical methods, namely, Normal, Gumbel max, Log-Pearson III (LP III), and Gen. extreme value method are employed for 10, 20, 30, 35, 40, 50, 60, 70, 75, 100, 150 years to forecast stream flow. Monthly flow data from four stations on Mahanadi River, in Eastern Central India, namely, Rampur, Sundargarh, Jondhra, and Basantpur, are used in the study. Results show that Gumbel max gives better flow discharge value than the Normal, LP III, and Gen. extreme value methods for all four gauge stations. Estimated flood values for Rampur, Sundargarh, Jondhra, and Basantpur stations are 372.361 m/sec, 530.415 m/sec, 2,133.888 m/sec, and 3,836.22 m/sec, respectively, considering Gumbel max. Goodness-of-fit tests for four statistical distribution techniques applied in the present study are also evaluated using Kolmogorov–Smirov, Anderson–Darling, Chisquared tests at critical value 0.05 for the four proposed gauge stations. Goodness-of-fit test results show that Gen. extreme value gives best results at Rampur, Sundergarh, and Jondhra gauge stations followed by LP III, whereas LP III is the best fit for Basantpur, followed by Gen. extreme value.

Materials Impact on the Performance Analysis and Optimization of RF MEMS Switch for 5G Reconfigurable Antenna

Abstract: In this paper, we have enhanced the performance of the existing switch operating at 35 GHz by using a novel optimization process and these results are compared with the existing experimental results. The same optimization process is utilized to design the switch at 5G mobile communication frequencies (38 GHz) and its performance is analyzed. The switch is designed on the coplanar waveguide having 50 Ω impedance matching and is optimized based on the wireless application system for Ka-band (27–40 GHz) at a resonance frequency of 38 GHz. The proposed switch at 38 GHz exhibits low input reflection coefficient (S11) of 13.86 dB (> 10 dB), low insertion loss (S12) of 0.44 dB (< 1 dB) and high isolation (S21) of 33 dB at Ka-band frequencies. The proposed structure is designed to have less spring constant of 2.38 N/m and actuation voltage of 11.97 V. During UP state position switch develops an ON-state capacitance of 31 fF and OFF state capacitance of 0.152 pF during downstate with a capacitance ratio of 4.90. The switch requires low switching time of 0.19 ms and it can withstand up to the force of 12.97 × 10−4 N which is generated during actuation. Thus, the proposed switch can be effectively optimized for good performance and can be used for high-frequency 5G communication applications.

Fabrication of nanostructured NiO/WO3 with graphitic carbon nitride for visible light driven photocatalytic hydroxylation of benzene and metronidazole degradation

Abstract: In the present study, we report a novel nanocatalyst prepared by the modification of g-C3N4 nanosheets with a NiO/WO3 nanohybrid via a simple ultra-sonication method. A novel method was employed for the synthesis of the NiO/WO3 nanohybrid. The photocatalytic efficiency of the catalysts was explored in C–H activation and degradation of a product commonly found in pharmaceutical waste, namely metronidazole. The photocatalyst recorded a rapid and highly selective conversion of benzene to phenol under irradiation using a LED bulb. Degradation of metronidazole was carried out both in the presence of sunlight and LED light and monitored using UV-vis spectroscopy. It was observed that the degradation process was more efficient under solar light irradiation, where complete degradation was recorded in 90 minutes with a rate constant of 0.0165 min−1. The modified photocatalyst showed much higher efficiency when compared to the individual components of g-C3N4 and nanostructured NiO/WO3. The structural features of the photocatalyst were thoroughly investigated using powder XRD, SEM, TEM, XPS, UV-DRS, PL and BET analysis. This enhanced efficiency is attributed to a larger surface area, lower band gap and delayed recombination of photogenerated charge carriers at the heterojunction. The critical involvement of photoactive radicals in the degradation process was thoroughly investigated by trapping experiments using photoluminescence spectroscopy.

Perforated serpentine membrane with AlN as dielectric material shunt capacitive RF MEMS switch fabrication and characterization

Abstract: In this communication, we have designed, simulated, performance improved, fabricated and characterized a shunt capacitive RF MEMS switch with perforated serpentine membrane (Au). Fabrication is done using surface micromachining with four masks. AlN dielectric material of 50 nm thickness is offering high isolation of − 58.5 dB at 31.5 GHz, and incorporation of perforation to the membrane the switch insertion loss is very low i.e., − 0.4 dB. The perforated serpentine membrane with non-uniform meanders of 500 nm thickness using Au material is helped to reduce the actuation voltage, the fabricated switch is requiring 4.5 V actuation voltage. DC sputtering PVD is used to deposit metal (Au) and dielectric (AlN) thin Films. S1813 photoresist is used as a sacrificial layer and the membrane structure is released using piranha, IPA and critical point drying (Pressure 1260 Psi, Temperature 31 °C).