National Institute of Technology, Silchar

About: National Institute of Technology, Silchar is a education organization based out in Silchar, Assam, India. It is known for research contribution in the topics: Control theory & Electric power system. The organization has 1934 authors who have published 4219 publications receiving 41149 citations. The organization is also known as: NIT Silchar.

Design and implementation of an SMS based home security system

Abstract: The project presents a versatile security and alarm system which can be used by individuals, corporations and establishments which require a cheap but reliable security system. The idea behind this project is to provide its users with a simple, fast and reliable way to get help during emergency situations. The device can be placed at any remote location which can be easily accessed by the user. It uses a microcontroller for system control, GSM technology for communication and sends SMS containing the emergency message and the GPS location of the sender. The project consists of an 8-bit microcontroller ATmega16, GSM SIM900A module and two Android applications for user interface with the hardware. One of the application configures the device. On pressing the panic button, the emergency contact receives the emergency message along with the GPS location of the sender. The device has been made for less than 1300INR and it can be used anywhere irrespective of the place of deployment provided mobile network connectivity is available.

Scaling of Dopant Segregation Schottky Barrier Using Metal Strip Buried Oxide MOSFET and its Comparison with Conventional Device

Abstract: In this paper, a Schottky barrier silicon-on-insulator (SOI) MOSFET with asymmetric doping (dopant segregated) at the source/drain side and a metal strip in the BOX (Buried oxide) layer has been proposed. The asymmetric doping reduces the off-state leakage (IOFF) and improves the on-state drive current (ION) in comparison to the conventional structure. The metal strip inside the BOX improves the subthreshold swing and ION/IOFF current ratio. The simulation study of a conventional device using an image force barrier lowering model and without image force barrier lowering is presented. The channel length scaling leads to a high on-current in the conventional device. The thermionic emission and tunneling current are increased with barrier lowering and hence a high leakage current in the off-state region. Moreover, the proposed device is compared with the conventional device. The proposed device shows high ION/IOFF ratio of 107-108 at VDS = 0.1 V and Subthreshold Swing (SS) of 66 mV/dec.

Chaos control in biological system using recursive backstepping sliding mode control

Abstract: This paper puts forward the control of chaos in the biological system. A new controller based on recursive backstepping sliding mode control is proposed such that it can control the chaotic dynamics in the biological system to stabilize at any position or to track any trajectory that is a smooth function of time. A proportional integral switching surface is proposed to achieve the stability condition of the error dynamics. Unlike the open loop and open plus closed loop control techniques, the design of proposed controller does not require the parameter perturbation. The required stability condition is derived based on Lyapunov stability theory. Simulation is achieved in MATLAB environment. Numerical simulation results are presented in order to show the effective verification of the proposed controller design. Simulation results correspond that the objective of chaos control is achieved successfully.