scispace - formally typeset
Search or ask a question
Institution

National Institute of Technology, Silchar

EducationSilchar, Assam, India
About: National Institute of Technology, Silchar is a education organization based out in Silchar, Assam, India. It is known for research contribution in the topics: Control theory & Electric power system. The organization has 1934 authors who have published 4219 publications receiving 41149 citations. The organization is also known as: NIT Silchar.


Papers
More filters
Journal ArticleDOI
TL;DR: A unified technique to reduce both static power (leakage) and dynamic power along with area trade-off has been carried out for FSM synthesis, targeting static CMOS NAND-NAND PLA, dynamic CMOS NOR-NOR PLA and pseudo-NMOS NOR -NOR PLA implementations.

23 citations

Journal ArticleDOI
TL;DR: In this paper, the authors investigated the forward gate leakage current in an AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistor and developed a physics-based analytical model for the trap-assisted tunneling (TAT) mechanism.
Abstract: Investigation of various forward gate leakage current mechanisms in an AlGaN/GaN metal–oxide–semiconductor high-electron-mobility transistor is done in this paper. During high temperature ( $T>388$ K), the trap-assisted tunneling (TAT) mechanism dominates the gate leakage current at low electric field for a range of gate biases from 0 to 0.2 V, whereas the Poole–Frenkel emission is the major component during medium and high electric field. During low temperature ( $T K), TAT alone is dominant and consistent throughout the whole range of electric field. A formulation of vertical electric field, across the oxide and barrier, is framed by incorporating oxide/barrier interface density of states. Then a physics-based compact analytical model for the TAT mechanism is developed and along with the existing PFE model, the forward gate leakage current is calculated. The results of the developed model in different regions of forward gate characteristics are in good agreement with the experimental results available in the literature.

22 citations

Journal ArticleDOI
TL;DR: The design of control algorithms in the presence of noises and various other disturbances is discussed, which in turn introduces sensor noise in the measurement, thereby leading to model imperfection.

22 citations

Journal ArticleDOI
TL;DR: In this paper, the impact of dielectric pocket on analog/radio-frequency (RF) performances of SOI-TFET was investigated, and it was found that the inclusion of a Dielectric Pocket to SOI -TFET has been found to have...
Abstract: In this manuscript, the impact of dielectric pocket on analog/radio-frequency (RF) performances of SOI-TFET is investigated. The inclusion of a dielectric pocket to SOI-TFET has been found to have ...

22 citations

Journal ArticleDOI
TL;DR: A comprehensive study on the scaffold properties shows that 5% ZnO composite scaffold exhibits the best-optimized properties suitable for bone tissue engineering applications.

22 citations


Authors

Showing all 2010 results

Network Information
Related Institutions (5)
Indian Institute of Technology Roorkee
21.4K papers, 419.9K citations

94% related

Indian Institutes of Technology
40.1K papers, 652.9K citations

92% related

Indian Institute of Technology Delhi
26.9K papers, 503.8K citations

92% related

Indian Institute of Technology Kharagpur
38.6K papers, 714.5K citations

91% related

Indian Institute of Technology Madras
36.4K papers, 590.4K citations

91% related

Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
202335
2022149
2021947
2020742
2019596
2018451