Institution
National Institute of Technology, Silchar
Education•Silchar, Assam, India•
About: National Institute of Technology, Silchar is a education organization based out in Silchar, Assam, India. It is known for research contribution in the topics: Control theory & Electric power system. The organization has 1934 authors who have published 4219 publications receiving 41149 citations. The organization is also known as: NIT Silchar.
Papers published on a yearly basis
Papers
More filters
••
TL;DR: A unified technique to reduce both static power (leakage) and dynamic power along with area trade-off has been carried out for FSM synthesis, targeting static CMOS NAND-NAND PLA, dynamic CMOS NOR-NOR PLA and pseudo-NMOS NOR -NOR PLA implementations.
23 citations
••
TL;DR: In this paper, the authors investigated the forward gate leakage current in an AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistor and developed a physics-based analytical model for the trap-assisted tunneling (TAT) mechanism.
Abstract: Investigation of various forward gate leakage current mechanisms in an AlGaN/GaN metal–oxide–semiconductor high-electron-mobility transistor is done in this paper. During high temperature ( $T>388$ K), the trap-assisted tunneling (TAT) mechanism dominates the gate leakage current at low electric field for a range of gate biases from 0 to 0.2 V, whereas the Poole–Frenkel emission is the major component during medium and high electric field. During low temperature ( $T K), TAT alone is dominant and consistent throughout the whole range of electric field. A formulation of vertical electric field, across the oxide and barrier, is framed by incorporating oxide/barrier interface density of states. Then a physics-based compact analytical model for the TAT mechanism is developed and along with the existing PFE model, the forward gate leakage current is calculated. The results of the developed model in different regions of forward gate characteristics are in good agreement with the experimental results available in the literature.
22 citations
••
TL;DR: The design of control algorithms in the presence of noises and various other disturbances is discussed, which in turn introduces sensor noise in the measurement, thereby leading to model imperfection.
22 citations
••
TL;DR: In this paper, the impact of dielectric pocket on analog/radio-frequency (RF) performances of SOI-TFET was investigated, and it was found that the inclusion of a Dielectric Pocket to SOI -TFET has been found to have...
Abstract: In this manuscript, the impact of dielectric pocket on analog/radio-frequency (RF) performances of SOI-TFET is investigated. The inclusion of a dielectric pocket to SOI-TFET has been found to have ...
22 citations
••
TL;DR: A comprehensive study on the scaffold properties shows that 5% ZnO composite scaffold exhibits the best-optimized properties suitable for bone tissue engineering applications.
22 citations
Authors
Showing all 2010 results
Name | H-index | Papers | Citations |
---|---|---|---|
Abdullah Gani | 59 | 279 | 15355 |
Subhransu Ranjan Samantaray | 39 | 167 | 4880 |
Subhasish Dey | 39 | 220 | 4755 |
Bithin Datta | 37 | 158 | 3932 |
Arindam Ghosh | 33 | 248 | 6091 |
Raghavan Murugan | 33 | 126 | 3838 |
Md. Ahmaruzzaman | 32 | 113 | 6590 |
Deepak Puthal | 31 | 149 | 3213 |
Sivaji Bandyopadhyay | 31 | 310 | 4436 |
Ibrar Yaqoob | 30 | 77 | 7858 |
Lalit Chandra Saikia | 29 | 121 | 3154 |
Krishnamurthy Muralidhar | 28 | 218 | 2972 |
Sudip Dey | 28 | 155 | 1956 |
Krishna Murari Pandey | 27 | 262 | 2455 |
Shailendra Jain | 27 | 128 | 3907 |