National Institute of Technology, Silchar

About: National Institute of Technology, Silchar is a education organization based out in Silchar, Assam, India. It is known for research contribution in the topics: Computer science & Control theory. The organization has 1934 authors who have published 4219 publications receiving 41149 citations. The organization is also known as: NIT Silchar.

Optimal size and location of distributed generations using Differential Evolution (DE)

Abstract: To improve the overall efficiency of power system, the performance of distribution system must be improved. This paper presents a new methodology using Differential Evolution (DE) for the placement of DG units in electrical distribution systems to reduce the power losses and to improve the voltage profile. Unlike the conventional evolutionary algorithms that depend on predefined probability distribution function for mutation process, differential evolution uses the differences of randomly sampled pairs of objective vectors for its mutation process. The Due to the increasing interest on renewable sources in recent times, the studies on integration of distributed generation to the power grid have rapidly increased. The distributed generation (DG) sources are added to the network mainly to reduce the power losses by supplying a net amount of power. In order to minimize the line losses of power systems, it is equally important to define the size and location of local generation. The suggested method is programmed under MATLAB software and is tested on IEEE 33-bus test system and the results are presented. The method is found to be effective and applicable for practical network.

Optimization of lead (II) sorption potential using developed activated carbon from tamarind wood with chemical activation by zinc chloride

Abstract: An adsorbent prepared from tamarind wood with chemical activation by zinc chloride was used to study its sorption potential on removing lead (II). An efficient response surface methodology (RSM) is used for optimization of removal of lead (II) from aqua solutions. While the goal of adsorption of lead (II) optimization was to improve adsorption conditions in batch process, i.e. to minimize the adsorbent doses and to increase the initial concentrations of lead (II). A 24 full factorial central composite design experimental design was employed. Analysis of variance showed a high coefficient of determination value (R2 = 0.996) and satisfactory prediction second-order regression model was derived. Maximum lead removal efficiency was predicted and experimentally validated. The optimum adsorbent dose, temperature, initial concentration of lead (II), and initial pH of the lead (II) solution were found to be 1.44 g L−1, 50°C, 49.23 mg L−1, and 4.07, respectively. Under optimal value of process parameters, ...

Effect of tool wear on microrods fabrication using reverse μEDM

Abstract: Arrayed microrods are used to drill array of microholes in workpieces by Micro electrical discharge machining (μEDM). In comparison to a single microrod, the use of an array of microrods enables drilling of multiple microholes in lesser time, and hence it offers a higher productivity. The present work focuses on the effect of tool wear on the dimensions of the machined array of microrods through reverse micro electrical discharge machining (R-μEDM). The effects of the input parameters such as voltage, capacitance and feed rate on the obtained length and diameter of the microrods have been investigated. This study introduces a simple analytical model to evaluate the amount of tool wear and material removal from a bulk rod. As the levels of voltage and capacitance increase from lower to higher, the tool wear increases by 574%. At lower levels of voltage and capacitance, a straight array of microrods with a longer length of about 1.961 mm is obtained. On the other hand, at higher levels of voltage an...

CNTFET: The emerging post-CMOS device

Abstract: This Paper presents the comparison of MOSFET and CNTFET devices. Many problems are associated with conventional MOSFET in nanometer regime. In this paper we have analyzed and justify why CNTFET is to be a post-CMOS device. For that we have analyzed the quantum capacitance and found that in CNTFET device it decreases with decrease in oxide thickness whereas in MOSFET device it increases, which leads to performance degradation of the device. After that we have observed from the HSPICE simulation that beyond 10 nm channel length the threshold voltage of MOSFET device is reduces rapidly whereas in CNTFE device it increases sharply which leads to reduce leakage power.

Evolution of material selection in commercial aviation industry—a review

Abstract: Commercial aircrafts made the world smaller today through global networking. It is possible owing to the safe, reliable, and advanced material selection for modern aircraft and its components by the manufacturer. The materials used in the manufacturing of aircraft structure need to serve satisfactorily against extremes of temperature ranging from high altitude, low temperature to ambient temperature at ground level and extreme of forces as well as material should require high strength to weight and stiffness to weight ratio. Therefore, the aim of this study is to present the evaluation strategy in material selection for aviation industry from the beginning of the era.