National Institute of Technology, Silchar

About: National Institute of Technology, Silchar is a education organization based out in Silchar, Assam, India. It is known for research contribution in the topics: Computer science & Control theory. The organization has 1934 authors who have published 4219 publications receiving 41149 citations. The organization is also known as: NIT Silchar.

Kyasanur Forest Disease Classification Framework Using Novel Extremal Optimization Tuned Neural Network in Fog Computing Environment.

Abstract: Kyasanur Forest Disease (KFD) is a life-threatening tick-borne viral infectious disease endemic to South Asia and has been taking so many lives every year in the past decade. But recently, this disease has been witnessed in other regions to a large extent and can become an epidemic very soon. In this paper, a new fog computing based e-Healthcare framework has been proposed to monitor the KFD infected patients in an early phase of infection and control the disease outbreak. For ensuring high prediction rate, a novel Extremal Optimization tuned Neural Network (EO-NN) classification algorithm has been developed using hybridization of the extremal optimization with the feed-forward neural network. Additionally, a location based alert system has also been suggested to provide the global positioning system (GPS)-based location information of each KFD infected user and the risk-prone zones as early as possible to prevent the outbreak. Furthermore, a comparative study of proposed EO-NN with state of art classification algorithms has been carried out and it can be concluded that EO-NN outperforms others with an average accuracy of 91.56%, a sensitivity of 91.53% and a specificity of 97.13% respectively in classification and accurate identification of risk-prone areas.

2-D analytical modeling for electrostatic potential and threshold voltage of a dual work function gate Schottky barrier MOSFET

Abstract: A two-dimensional analytical model for the surface potential and threshold voltage of a dual work function Schottky barrier (SB) MOSFET is presented. The developed model considers the effects of the varying gate metal work function, gate and drain voltages, and different doping concentrations, gate dielectric permittivity, and silicon thickness. For solving the electrostatic potential of the SB-MOSFET by using Poisson’s equation with appropriate boundary conditions, parabolic approximation has been considered. The proposed device has also incorporated the effect of barrier height lowering at the metal/semiconductor contacts. The results of our modeled surface potential and the threshold voltage, match with technology computer aided design simulations.

Progress on agricultural residue-based microwave absorber: a review and prospects

Abstract: Microwave absorber comprising various agricultural residue-based microwave-absorbing materials is one of the interesting and challenging topics to modern-day scientists and engineers. In this work, we explicitly present an overview of the microwave absorption mechanism, different measurement techniques, various types of microwave absorber structure, and factors affecting the microwave absorption. We also discuss various stages of fabrication of lightweight and low-cost microwave absorber using different types of agricultural residues. This review provides an overall summary of the state-of-the-art progress on various agricultural residue-based microwave absorbers. Finally, some new prospects are also discussed from the existed theoretical and experimental results in this work, to propel their application in practice.