Institution
National Institute of Technology, Silchar
Education•Silchar, Assam, India•
About: National Institute of Technology, Silchar is a education organization based out in Silchar, Assam, India. It is known for research contribution in the topics: Control theory & Electric power system. The organization has 1934 authors who have published 4219 publications receiving 41149 citations. The organization is also known as: NIT Silchar.
Papers published on a yearly basis
Papers
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TL;DR: In this article, the surface modification phenomenon by EDM with artificial neural networks has been modeled and two output measures, material transfer rate and average layer thickness, have been correlated with different process parameters and presented in the form of plots.
Abstract: Electro-discharge machining (EDM) is a widely accepted nontraditional machining process used mostly for machining materials difficult to machine by conventional shearing process. Surface modification by powder metallurgy sintered tools is an uncommon aspect of EDM. Of late, it is being explored by many researchers. In the present paper, attempts have been made to model the surface modification phenomenon by EDM with artificial neural networks. Two output measures, material transfer rate and average layer thickness, have been correlated with different process parameters and presented in the form of plots. The predicted results are matching well with the experimental results.
88 citations
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TL;DR: In this paper, an attempt has been made to review the literature on cracking of plastics waste and it's co-processing with petroleum residues and other heavy oil, the types of reactors and the catalyst employed in the process.
88 citations
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TL;DR: The limited performance evaluations reported here demonstrate the potential applicability of the developed methodology using nonlinear programming and linked flow and transport simulation model for a fairly large study area with multiple unknown pollution sources.
88 citations
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TL;DR: In this paper, the effect of divergence angle, radius of the strut tip and the half angle of a strut on the combustion enhancement of a two-strut scramjet combustor was analyzed using ANSYS 14-FLUENT code.
86 citations
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TL;DR: In this article, a perspective of Ga2O3 material towards making high electron mobility transistors (HEMTs) for a certain class of RF applications is given, where various defects in WBG devices and their effects on the reliability aspects are also addressed.
86 citations
Authors
Showing all 2010 results
Name | H-index | Papers | Citations |
---|---|---|---|
Abdullah Gani | 59 | 279 | 15355 |
Subhransu Ranjan Samantaray | 39 | 167 | 4880 |
Subhasish Dey | 39 | 220 | 4755 |
Bithin Datta | 37 | 158 | 3932 |
Arindam Ghosh | 33 | 248 | 6091 |
Raghavan Murugan | 33 | 126 | 3838 |
Md. Ahmaruzzaman | 32 | 113 | 6590 |
Deepak Puthal | 31 | 149 | 3213 |
Sivaji Bandyopadhyay | 31 | 310 | 4436 |
Ibrar Yaqoob | 30 | 77 | 7858 |
Lalit Chandra Saikia | 29 | 121 | 3154 |
Krishnamurthy Muralidhar | 28 | 218 | 2972 |
Sudip Dey | 28 | 155 | 1956 |
Krishna Murari Pandey | 27 | 262 | 2455 |
Shailendra Jain | 27 | 128 | 3907 |